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Luo Ju-Xin, Gao Hong-Li, Deng Jin-Xiang, Ren Jia-Hui, Zhang Qing, Li Rui-Dong, Meng Xue. Effects of annealing temperature on properties of gallium oxide thin films and ultraviolet detectors. Acta Physica Sinica,
2023, 72(2): 028502.
doi: 10.7498/aps.72.20221716
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Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song. Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing. Acta Physica Sinica,
2020, 69(10): 102901.
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Xie Jing, Li Bing, Li Yuan-Jie, Yan Pu, Feng Liang-Huan, Cai Ya-Ping, Zheng Jia-Gui, Zhang Jing-Quan, Li Wei, Wu Li-Li, Lei Zhi, Zeng Guang-Gen. Study of ZnS thin films prepared by RF magnetron sputtering technique. Acta Physica Sinica,
2010, 59(8): 5749-5754.
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Zhao Yan, Jiang Yi-Jian. The effect of laser irradiation on ZnO thin films. Acta Physica Sinica,
2010, 59(4): 2679-2684.
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Gao Li, Zhang Jian-Min. Photoluminescence of diluted Mg doped ZnO thin films and band-gap change mechanisms. Acta Physica Sinica,
2010, 59(2): 1263-1267.
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Li Yang-Ping, Liu Zheng-Tang. Plasma emission diagnostics for the optimization of deposition parameters in RF magnetron sputtering of GaP film. Acta Physica Sinica,
2009, 58(7): 5022-5028.
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Wei Wei, Liu Ming, Qu Sheng-Wei, Zhang Qing-Yu. Photoluminescence of as-grown and annealed ZnO films on Ti-buffered Si(111) substrates. Acta Physica Sinica,
2009, 58(8): 5736-5743.
doi: 10.7498/aps.58.5736
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Gao Li, Zhang Jian-Min. Preparation of Mg and Al co-doped ZnO thin films with tunable band gap. Acta Physica Sinica,
2009, 58(10): 7199-7203.
doi: 10.7498/aps.58.7199
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Li Yang-Ping, Liu Zheng-Tang, Liu Wen-Ting, Yan Feng, Chen Jing. Preparation and properties of GeC thin films deposited by reactive RF magnetron sputtering. Acta Physica Sinica,
2008, 57(10): 6587-6592.
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Wang Zhen-Ning, Jiang Mei-Fu, Ning Zhao-Yuan, Zhu Li. Structure and photoluminescence of Zn2GeO4 polycrystalline films prepared by radio-frequency magnetron sputtering. Acta Physica Sinica,
2008, 57(10): 6507-6512.
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Gu Jian-Feng, Liu Zhi-Wen, Liu Ming, Fu Wei-Jia, Ma Chun-Yu, Zhang Qing-Yu. Two-step growth of ZnO films deposited by reactive radio-frequency magnetron sputtering on Si(001) substrate. Acta Physica Sinica,
2007, 56(4): 2369-2376.
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Li Yang-Ping, Liu Zheng-Tang, Zhao Hai-Long, Liu Wen-Ting, Yan Feng. RF magnetron sputtering of GaP thin film and computer simulation of its depositing process. Acta Physica Sinica,
2007, 56(5): 2937-2944.
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Wang Nan, Kong Chun-Yang, Zhu Ren-Jiang, Qin Guo-Ping, Dai Te-Li, Nan Mao, Ruan Hai-Bo. Preparation and characteristics research of p-type ZnO films. Acta Physica Sinica,
2007, 56(10): 5974-5978.
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Zhang Xi-Jian, Ma Hong-Lei, Wang Qing-Pu, Ma Jin, Zong Fu-Jian, Xiao Hong-Di, Ji Feng. Effect of annealing on optical properties of MgxZn1-xO thin films deposited at low temperature. Acta Physica Sinica,
2006, 55(1): 437-440.
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Sun Cheng-Wei, Liu Zhi-Wen, Zhang Qing-Yu. Influence of annealing temperature on the microstructure and photoluminescence of ZnO films. Acta Physica Sinica,
2006, 55(1): 430-436.
doi: 10.7498/aps.55.430
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Zhang Xi-Jian, Ma Hong-Lei, Wang Qing-Pu, Ma Jin, Zong Fu-Jian, Xiao Hong-Di, Ji Feng. Structural and optical properties of MgxZn1-xO thin films deposited by radio frequency magnetron sputtering. Acta Physica Sinica,
2005, 54(9): 4309-4312.
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Wang Yu-Heng, Ma Jin, Ji Feng, Yu Xu-Hu, Zhang Xi-Jian, Ma Hong-Lei. Structural and photoluminescence characters of SnO22:Sb thin films pr epared by rf magnetron sputtering. Acta Physica Sinica,
2005, 54(4): 1731-1735.
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Li Huo-Quan, Ning Zhao-Yuan, Cheng Shan-Hua, Jiang Mei-Fu. Photoluminescence centers and shift of ZnO films deposited by rf magnetron sputtering. Acta Physica Sinica,
2004, 53(3): 867-870.
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Fang Ze-Bo, Gong Heng-Xiang, Liu Xue-Qin, Xu Da-Yin, Huang Chun-Ming, Wang Yin-Yue. Effects of annealing on the structure and photoluminescence of ZnO films. Acta Physica Sinica,
2003, 52(7): 1748-1751.
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LIN BI-XIA, FU ZHU-XI, JIA YUN-BO, LIAO GUI-HONG. THE ULTRAVIOLET AND GREEN LUMINESCENCE CENTERS IN UNDOPED ZINC OXIDE FILMS. Acta Physica Sinica,
2001, 50(11): 2208-2211.
doi: 10.7498/aps.50.2208
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