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One-dimensional ZnO nanostructure is especially attractive because of its unique properties such as high surface-to-volume ratio and a large exciton binding energy, but how to put it into a device is still a challenge. In this article, we show that a novel lateral metal-semiconductor-metal ultraviolet detector composed of ZnO nanowires is fabricated on glass substrate by a single-step hydrothermal approach. The fabricated photodetector demonstrates that the response to UV illumination in air is fast, the rise time is about 4 s, and the fall time is about 5 s, which could be attributed to the fact that the adsorption and the desorption of water molecules in the air onto oxygen vacancy of the nanowire significantly influence the photoresponse.
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Keywords:
- ZnO nanowires /
- hydrothermal reaction /
- the rise time and fall time /
- water molecules
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[2] Liu R B, Zou B S 2011 Chin. Phys. B 20 047104
[3] Das S N, Moon K J, Kar J P, Choi J H, Xiong J J 2010 Appl. Phys.Lett. 97 022103
[4] Lee C H, Kim Y J, Lee J, Hong Y J, Jeon J M, Kim M, Hong S, YiG C 2011 Nanotechnology 22 055205
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[6] Soci C, Zhang A, Xiang B, Dayeh S A, Aplin D P R, Park J, BaoX Y, Lo Y H, Wang D 2007 Nano Lett. 7 1003
[7] Jha S K, Liu C P, Chen Z H, Chen K J, Bello I, Zapien J A, ZhangW J, Lee S T 2010 J. Phys. Chem. C 114 7999
[8] Bera A, Basak D 2009 Appl. Mater. 1 2006
[9] Zhou J, Gu Y, Hu Y, Mai W, Yeh P, Bao G, Sood A K, Polla D L,Wang Z L 2009 Appl. Phys. Lett. 94 191103
[10] Liu N S, Fang G J 2010 J. Phys. Chem. C 114 8575
[11] Zhou J, Gu Y, Hu Y, Mai W, Yeh P H, Bao G, Sood A K, Polla DJ, Wang Z L 2009 Appl. Phys. Lett. 94 191103
[12] Ahn S E, Lee J S, Kim H, Kim S, Kang B H, Kim K H, Kim G T2004 Appl. Phys. Lett. 84 5022
[13] Li Y, Valle F D, Simonnet M, Yamada I, Delaunay J J 2009 Appl.Phys. Lett. 94 023110
[14] Wu C X, Zhou M, Feng C C, Yuan R, Li G, Ma W W, Cai L 2008Acta Phys. Sin. 57 3887 (in Chinese) [吴春霞, 周明, 冯程程, 袁润, 李刚, 马伟伟, 蔡兰 2008 57 3887]
[15] Chen K J, Hung F Y, Chang S J, Young S J 2009 J. Alloys andCompounds 479 674
[16] Fang F, Zhao D X, Li B H, Zhang Z Z, Shen D Z,Wang X H 2010J. Phys. Chem. C 114 12477
[17] Liu K W, Ma J G, Zhang J Y, Lu Y M, Jiang D Y, Li B H, ZhaoD X, Zhang Z Z, Yao B, Shen D Z 2007 Solid-State Electronics 51757
[18] Law J B K, Thong J T L 2006 Appl. Phys. Lett. 88 133114
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[1] Sun H, Zhang Q F, Wu J L 2007 Acta Phys. Sin. 56 3479 (inChinese) [孙晖, 张琦锋, 吴锦雷2007 56 3479]
[2] Liu R B, Zou B S 2011 Chin. Phys. B 20 047104
[3] Das S N, Moon K J, Kar J P, Choi J H, Xiong J J 2010 Appl. Phys.Lett. 97 022103
[4] Lee C H, Kim Y J, Lee J, Hong Y J, Jeon J M, Kim M, Hong S, YiG C 2011 Nanotechnology 22 055205
[5] Jang E S, Won J H, Kim Y W, Chen X Y, Choy J H 2010 Cryst.Eng. Comm. 12 3467
[6] Soci C, Zhang A, Xiang B, Dayeh S A, Aplin D P R, Park J, BaoX Y, Lo Y H, Wang D 2007 Nano Lett. 7 1003
[7] Jha S K, Liu C P, Chen Z H, Chen K J, Bello I, Zapien J A, ZhangW J, Lee S T 2010 J. Phys. Chem. C 114 7999
[8] Bera A, Basak D 2009 Appl. Mater. 1 2006
[9] Zhou J, Gu Y, Hu Y, Mai W, Yeh P, Bao G, Sood A K, Polla D L,Wang Z L 2009 Appl. Phys. Lett. 94 191103
[10] Liu N S, Fang G J 2010 J. Phys. Chem. C 114 8575
[11] Zhou J, Gu Y, Hu Y, Mai W, Yeh P H, Bao G, Sood A K, Polla DJ, Wang Z L 2009 Appl. Phys. Lett. 94 191103
[12] Ahn S E, Lee J S, Kim H, Kim S, Kang B H, Kim K H, Kim G T2004 Appl. Phys. Lett. 84 5022
[13] Li Y, Valle F D, Simonnet M, Yamada I, Delaunay J J 2009 Appl.Phys. Lett. 94 023110
[14] Wu C X, Zhou M, Feng C C, Yuan R, Li G, Ma W W, Cai L 2008Acta Phys. Sin. 57 3887 (in Chinese) [吴春霞, 周明, 冯程程, 袁润, 李刚, 马伟伟, 蔡兰 2008 57 3887]
[15] Chen K J, Hung F Y, Chang S J, Young S J 2009 J. Alloys andCompounds 479 674
[16] Fang F, Zhao D X, Li B H, Zhang Z Z, Shen D Z,Wang X H 2010J. Phys. Chem. C 114 12477
[17] Liu K W, Ma J G, Zhang J Y, Lu Y M, Jiang D Y, Li B H, ZhaoD X, Zhang Z Z, Yao B, Shen D Z 2007 Solid-State Electronics 51757
[18] Law J B K, Thong J T L 2006 Appl. Phys. Lett. 88 133114
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