Simulation study of two-dimensional electron gas in N-polar GaN/AlGaN heterostructure

Wang Xian-Bin; Zhao Zheng-Ping; Feng Zhi-Hong

doi:10.7498/aps.63.080202

Abstract

By the self-consistent solution of the Schrödinger and poisson equations, the effects of GaN channel layer, AlGaN back barrier layer with and without Si doping and AlN interlayer on two-dimensional electron gas in N-polar GaN/AlGaN heterostructure are systematically studied. The results indicate that the increases of the thickness values of GaN channel layer and AlGaN back barrier layer and Al content value can improve the density of 2DEG to a certain degree, and the influences of different Si doping forms on 2DEG sheet density are not the same, also the confinement of 2DEG could be strengthened by increasing Al content value and thickness value of the AlGaN barrier layer. The AlN interlayer is a comparatively outstanding one in improving the performance of the 2DEG such as the 2DEG sheet density and confinement. When GaN channel layer thickness is less than 5 nm, there is no 2DEG in the simulation, when it exceeds 20 nm the 2DEG sheet density tends to be saturated. 2DEG has a tendency to be saturated when the thickness value of AlGaN back barrier is more than 40 nm. 2DEG sheet densities with uniform doping and delta doping in AlGaN back barrier are saturated when the doping concentration is more than 5×1019 cm-3. The 2DEG sheet density could be increased from 0.93×1013 cm-2 without AlN interlayer to 1.17×1013 cm-2 with 2 nm AlN interlayer.

Keywords:

Authors and contacts

1.
College of Information Engineering, Hebei University of Technology, Tianjin 300130, China;
2.
State Key Laboratory of ASIC and System, Shijiazhuang 050051, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61306113).

References

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[8]	Nidhi, Dasgupta S, Lu J, Speck J S, Mishra U K 2012 Elec. Dev. Lett. 33 961
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Cited By

[1]	Xie G, Tang C, Wang T, Guo Q, Zhang B, Sheng K, Ng W T 2013 Chin. Phys. B 22 026103
[2]	Kong X, Wei K, Liu G G, Liu X Y 2012 Chin. Phys. B 21 128501
[3]	Kong Y C, Zheng Y D, Chu R M, Gu S L 2003 Acta Phys. Sin. 52 1756 (in Chinese) [孔月婵, 郑有炓, 储荣明, 顾书林 2003 52 1756]
[4]	Kong Y C, Zheng Y D, Zhou C H, Deng Y Z, Gu S L, Shen B, Zhang R, Han P, Jiang R L, Shi Y 2004 Acta Phys. Sin. 53 2320 (in Chinese) [孔月婵, 郑有炓, 周春红, 邓永桢, 顾书林, 沈波, 张荣, 韩平, 江若琏, 施毅 2004 53 2320]
[5]	Zhang J C, Zheng P T, Dong Z D, Duan H T, Ni J Y, Zhang J F, Hao Y 2009 Acta Phys. Sin. 58 3409 (in Chinese) [张进成, 郑鹏天, 董作典, 段焕涛, 倪金玉, 张金凤, 郝跃 2009 58 3409]
[6]	Ambacher O, Smart J, Shealy J R, Weimann N G 1999 J. Appl. Phys. 85 3222
[7]	Denninghoff D, Lu J, Laurent M, Ahmadi E 2012 Proceedings of the 70th Device Research Conference University Park, TX, USA, June 18-20, 2012 p151
[8]	Nidhi, Dasgupta S, Lu J, Speck J S, Mishra U K 2012 Elec. Dev. Lett. 33 961
[9]	Kolluri S, Keller S, Brown D, Gupta G 2010 J. Appl. Phys. 108 119902
[10]	Zhang Y, Gu S L, Ye J D, Huang S M, Gu R, Chen B, Zhu S M, Zheng Y D 2013 Acta Phys. Sin. 62 150202 (in Chinese) [张阳, 顾书林, 叶建东, 黄时敏, 顾然, 陈斌, 朱顺明, 郑有炓 2013 62 150202]
[11]	Rajan S, Chini A, Wong M H, Speck J S, Mishra U K 2007 J. Appl. Phys. 102 044501
[12]	Li T, Wang H B, Liu J P, Niu N H, Zhang N G, Xing Y H, Han J, Liu Y, Gao G, Shen G D 2007 Acta Phys. Sin. 56 1036 (in Chinese) [李彤, 王怀兵, 刘建平, 牛南辉, 张念国, 邢艳辉, 韩军, 刘莹, 高国, 沈光地 2007 56 1036]

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