| [1] |
Ke Shao-Qiu, Ye Xian-Feng, Zhang Hao-Jun, Nie Xiao-Lei, Chen Tian-Tian, Liu Cheng-Shan, Zhu Wan-Ting, Wei Ping, Zhao Wen-Yu. xFe/Bi0.5Sb1.5Te3 thermoelectromagnetic films with coexistence of positive and negative magnetoresistance. Acta Physica Sinica,
2024, 73(22): 227301.
doi: 10.7498/aps.73.20240701
|
| [2] |
Wang Ji-Guang, Li Long-Ling, Qiu Jia-Tu, Chen Xu-Min, Cao Dong-Xing. Tuning two-dimensional electron gas at LaAlO3/KNbO3 interface by strain gradient. Acta Physica Sinica,
2023, 72(17): 176801.
doi: 10.7498/aps.72.20230573
|
| [3] |
Zhang Xue-Bing, Liu Nai-Zhang, Yao Ruo-He. Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2020, 69(15): 157303.
doi: 10.7498/aps.69.20200250
|
| [4] |
He Bin, He Xiong, Liu Guo-Qiang, Zhu Can, Wang Jia-Fu, Sun Zhi-Gang. Memristive and magnetoresistance effects of SnSe2. Acta Physica Sinica,
2020, 69(11): 117301.
doi: 10.7498/aps.69.20200160
|
| [5] |
Ma Song-Song, Shu Tian-Yu, Zhu Jia-Qi, Li Kai, Wu Hui-Zhen. Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas. Acta Physica Sinica,
2019, 68(16): 166801.
doi: 10.7498/aps.68.20191074
|
| [6] |
Li Qun, Chen Qian, Chong Jing. Variational study of the 2DEG wave function in InAlN/GaN heterostructures. Acta Physica Sinica,
2018, 67(2): 027303.
doi: 10.7498/aps.67.20171827
|
| [7] |
Wang Xian-Bin, Zhao Zheng-Ping, Feng Zhi-Hong. Simulation study of two-dimensional electron gas in N-polar GaN/AlGaN heterostructure. Acta Physica Sinica,
2014, 63(8): 080202.
doi: 10.7498/aps.63.080202
|
| [8] |
Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica,
2013, 62(20): 207303.
doi: 10.7498/aps.62.207303
|
| [9] |
Zhang Yang, Gu Shu-Lin, Ye Jian-Dong, Huang Shi-Min, Gu Ran, Chen Bin, Zhu Shun-Ming, Zhen You-Dou. Two-dimensional electron Gas in ZnMgO/ZnO heterostructures. Acta Physica Sinica,
2013, 62(15): 150202.
doi: 10.7498/aps.62.150202
|
| [10] |
Wang Wei, Zhou Wen-Zheng, Wei Shang-Jiang, Li Xiao-Juan, Chang Zhi-Gang, Lin Tie, Shang Li-Yan, Han Kui, Duan Jun-Xi, Tang Ning, Shen Bo, Chu Jun-Hao. Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure. Acta Physica Sinica,
2012, 61(23): 237302.
doi: 10.7498/aps.61.237302
|
| [11] |
Wang Ping-Ya, Zhang Jin-Feng, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. Transport properties of two-dimensional electron gas in lattice-matched InAlN/GaN and InAlN/AlN/GaN materials. Acta Physica Sinica,
2011, 60(11): 117304.
doi: 10.7498/aps.60.117304
|
| [12] |
Wang Jing-Ping, Meng Jian. Tunneling magnetoresistance of Fe3O4 compacts prepared in magnetic field. Acta Physica Sinica,
2008, 57(2): 1197-1201.
doi: 10.7498/aps.57.1197
|
| [13] |
Gao Hong-Ling, Li Dong-Lin, Zhou Wen-Zheng, Shang Li-Yan, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping. Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness. Acta Physica Sinica,
2007, 56(8): 4955-4959.
doi: 10.7498/aps.56.4955
|
| [14] |
Zhou Zhong-Tang, Guo Li-Wei, Xing Zhi-Gang, Ding Guo-Jian, Tan Chang-Lin, Lü Li, Liu Jian, Liu Xin-Yu, Jia Hai-Qiang, Chen Hong, Zhou Jun-Ming. The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure. Acta Physica Sinica,
2007, 56(10): 6013-6018.
doi: 10.7498/aps.56.6013
|
| [15] |
Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Cui Li-Jie, Li Dong-Lin, Gao Hong-Ling, Zeng Yi-Ping, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao. Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems. Acta Physica Sinica,
2007, 56(7): 4099-4104.
doi: 10.7498/aps.56.4099
|
| [16] |
Li Dong-Lin, Zeng Yi-Ping. Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors. Acta Physica Sinica,
2006, 55(7): 3677-3682.
doi: 10.7498/aps.55.3677
|
| [17] |
Zhou Wen-Zheng, Yao Wei, Zhu Bo, Qiu Zhi-Jun, Guo Shao-Ling, Lin Tie, Cui Li-Jie, Gui Yong-Sheng, Chu Jun-Hao. Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAlAs/InGaAs single quantum well. Acta Physica Sinica,
2006, 55(4): 2044-2048.
doi: 10.7498/aps.55.2044
|
| [18] |
Kong Yue-Chan, Zheng You-Dou, Zhou Chun-Hong, Deng Yong-Zhen, Gu Shu-Lin, Shen Bo, Zhang Rong, Han Ping, Jiang Ruo-Lian, Shi Yi. Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AlGaN/GaN heterostruture. Acta Physica Sinica,
2004, 53(7): 2320-2324.
doi: 10.7498/aps.53.2320
|
| [19] |
GUO ZHONG-CHENG, ZHENG PING, WANG NAN-LIN, CHEN ZHAO-JIA, Y. MAENO, Z. Q. MAO. THE c-AXIS MAGNETORESISTANCE STUDY IN THE NORMAL-STATE Sr2RuO4. Acta Physica Sinica,
2001, 50(9): 1824-1828.
doi: 10.7498/aps.50.1824
|
| [20] |
JIANG CHUN-PING, GUI YONG-SHENG, ZHENG GUO-ZHEN, MA ZHI-XUN, LI BIAO, GUO SHAO-L ING, CHU JUN-HAO. STUDY ON TRANSPORT PROPERTIES OF TWO-DIMENSIONAL ELECTRON GASES IN n-Hg0.80 Mg0.20Te INTERFACE ACCUMULATION LAYER. Acta Physica Sinica,
2000, 49(9): 1804-1808.
doi: 10.7498/aps.49.1804
|
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