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Organic light-emitting diode (OLED) based on tris-(8-hydroxyquinoline) aluminum(III) (Alq3) is fabricated, and its magnetoconductance (MC) effects are measured at different bias voltages. When the bias voltage is small, the OLED exhibits apparently a negative MC effect. After the bias voltage is increased, the MC value changes from negative to positive, displaying a negative-positive inversion. The MC effects in N, N'-Di(naphthalen-1-yl)-N, N' diphenyl-benzidine (NPB) and Copper phthalocyanine (CuPc) unipolar devices show that the negative MC effect in OLED comes from the CuPc layer in device. The MC effect of bipolar current can be explained using the electron-hole pair model. The MC effect of unipolar current can be attributed to the polaron-bipolaron transition in device. The positive-negative MC inversion in OLED results from the simultaneous contributions of the above two mechanisms during the variation of the injection current.
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Keywords:
- organic light-emitting diode /
- magnetoconductance /
- bipolaron /
- electron-hole pair
[1] Kalinowski J, Cocchi M, Virgili D, Di Marco P, Fattori V 2003 Chem. Phys. Lett. 380 710
[2] Kalinowski J, Cocchi M, Virgili D, Fattori V, Di Marco P 2004 Phys. Rev. B 70 205303
[3] Mermer Ö, Veeraraghavan G, Francis T L, Wohlgenannt M 2005 Solid State Commun. 134 631
[4] Sheng Y, Nguyen T D, Veeraraghava G, Mermer Ö, Wohlgenannt M, Qiu S, Scherf U 2006 Phys. Rev. B 74 045213
[5] Hu B, Wu Y 2007 Nature Mater. 6 985
[6] Desai P, Shakya P, Kreouzis T, Gillin W P 2007 J. Appl. Phys. 102 073710
[7] Bloom F L, Wagemans W, Kemerink M, Koopmans B 2007 Phys. Rev. Lett. 99 257201
[8] Bloom F L, Wagemans W, Kemerink M, Koopmans B 2008 Appl. Phys. Lett. 93 263302
[9] Bergeson J D, Prigodin V N, Lincoln D M, Epstein A J 2008 Phys. Rev. Lett. 100 067201
[10] Nguyen T D, Sheng Y, Rybicki J, Wohlgenannt M 2008 Phys. Rev. B 77 235209
[11] Xin L Y, Li C N, Li F, Liu S Y, Hu B 2009 Appl. Phys. Lett. 95 123306
[12] Bagnich S A, Niedermeier U, Melzer C, Sarfert W, von Seggern H 2009 Appl. Phys. Lett. 106 113702
[13] Zhang Y, Liu R, Lei Y L, Cheng P, Zhang Q M, Xiong Z H 2010 Acta Phys. Sin. 59 5817 (in Chinese) [张勇, 刘荣, 雷衍连, 陈平, 张巧明, 熊祖洪 2010 59 5817]
[14] Jiang W L, Meng Z H, Cong L, Wang J, Wang L Z, Han Q, Meng F C, Gao Y H 2010 Acta Phys. Sin. 59 6642 (in Chinese) [姜文龙, 孟昭辉, 从林, 汪津, 王立忠, 韩强, 孟凡超, 高永慧 2010 59 6642]
[15] Ding B F, Yao Y, Sun Z Y, Wu C Q, Gao X D, Wang Z J, Ding X M, Choy W C H, Hou X Y 2010 Appl. Phys. Lett. 97 163302
[16] Gómez J A, Nüesch F, Zuppiroli L, Graeff C F O 2010 Synth. Met. 160 317
[17] Peng Q M, Sun J X, Li X J, Li M L, Li F 2011 Appl. Phys. Lett. 99 033509
[18] Bobbert P A, Nguyen T D, van Oost F W A, Koopmans B, Wohlgenannt M 2007 Phys. Rev. Lett. 99 216801
[19] Schellekens A J, Wagemans W, Kersten S P, Bobbert P A, Koopmans B 2011 Phys. Rev. B 84 075204
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[1] Kalinowski J, Cocchi M, Virgili D, Di Marco P, Fattori V 2003 Chem. Phys. Lett. 380 710
[2] Kalinowski J, Cocchi M, Virgili D, Fattori V, Di Marco P 2004 Phys. Rev. B 70 205303
[3] Mermer Ö, Veeraraghavan G, Francis T L, Wohlgenannt M 2005 Solid State Commun. 134 631
[4] Sheng Y, Nguyen T D, Veeraraghava G, Mermer Ö, Wohlgenannt M, Qiu S, Scherf U 2006 Phys. Rev. B 74 045213
[5] Hu B, Wu Y 2007 Nature Mater. 6 985
[6] Desai P, Shakya P, Kreouzis T, Gillin W P 2007 J. Appl. Phys. 102 073710
[7] Bloom F L, Wagemans W, Kemerink M, Koopmans B 2007 Phys. Rev. Lett. 99 257201
[8] Bloom F L, Wagemans W, Kemerink M, Koopmans B 2008 Appl. Phys. Lett. 93 263302
[9] Bergeson J D, Prigodin V N, Lincoln D M, Epstein A J 2008 Phys. Rev. Lett. 100 067201
[10] Nguyen T D, Sheng Y, Rybicki J, Wohlgenannt M 2008 Phys. Rev. B 77 235209
[11] Xin L Y, Li C N, Li F, Liu S Y, Hu B 2009 Appl. Phys. Lett. 95 123306
[12] Bagnich S A, Niedermeier U, Melzer C, Sarfert W, von Seggern H 2009 Appl. Phys. Lett. 106 113702
[13] Zhang Y, Liu R, Lei Y L, Cheng P, Zhang Q M, Xiong Z H 2010 Acta Phys. Sin. 59 5817 (in Chinese) [张勇, 刘荣, 雷衍连, 陈平, 张巧明, 熊祖洪 2010 59 5817]
[14] Jiang W L, Meng Z H, Cong L, Wang J, Wang L Z, Han Q, Meng F C, Gao Y H 2010 Acta Phys. Sin. 59 6642 (in Chinese) [姜文龙, 孟昭辉, 从林, 汪津, 王立忠, 韩强, 孟凡超, 高永慧 2010 59 6642]
[15] Ding B F, Yao Y, Sun Z Y, Wu C Q, Gao X D, Wang Z J, Ding X M, Choy W C H, Hou X Y 2010 Appl. Phys. Lett. 97 163302
[16] Gómez J A, Nüesch F, Zuppiroli L, Graeff C F O 2010 Synth. Met. 160 317
[17] Peng Q M, Sun J X, Li X J, Li M L, Li F 2011 Appl. Phys. Lett. 99 033509
[18] Bobbert P A, Nguyen T D, van Oost F W A, Koopmans B, Wohlgenannt M 2007 Phys. Rev. Lett. 99 216801
[19] Schellekens A J, Wagemans W, Kersten S P, Bobbert P A, Koopmans B 2011 Phys. Rev. B 84 075204
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