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Investigation of electronegative plasmas has now been atrractive due to the advantages of negative-ion assisted etching and charge-free ion implantation in semiconductor manufacture. Langmuir electrostatic probe, as a simple, inexpensive and good spatial resolution diagnosic tool, is popularly used in investigating electronegative plasmas. In this paper, the Langmuir electrostatic probe is proposed to measure the capacitively coupled Ar plasmas with added electronegative gases, such as O2, Cl2 and SF6. The experimental results from the measurements of Ar plasmas with added electronegative gases driven by a 40.68 MHz field indicate that, with increasing flow rate of electronegative gas, high energy peak will occur in electron energy possibility function and shift towards higher energyside. The addition of electronegative gases reduces the electron density significantly as the electron temperature increases. We also calculate the electronegativity of Ar plasmas for the three kinds of electronegative gases. The preliminary interpretations of the above experimental phenomena are presented.
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Keywords:
- electronegative plasma /
- electron density /
- electron temperature /
- electronegativity
[1] Samukawa S, Mieno T 1996 Plasma sources Sci. Technol. 5 132
[2] Stoffels E, Stoffels W W, Kroesen G M W 2001 Plasma sources Sci. Technol. 10 311
[3] Crespo R M, Palop J I F, Hernández M A, Del Pino S B, Díaz-Cabrera J M, Ballesteros J 2006 J. App. Phys. 99 053303
[4] Doucet H J 1970 Phys. Lett. 33 A 283
[5] Sheridan T E 1999 J. phys. D: Appl. Phys. 32 1761
[6] Chabert P, Sheridan T E, Boswell R W, Perrin J 1999 Plasma Sources Sci. Technol. 8 561
[7] Boyd R L F, Thompson J B 1959 Proc. R. Soc. A 252 102
[8] Shindo M, Uchino S, Lchiki R, Yoshimura S, Kawai Y 2001 Rev. Sci. Instrum. 72 2288
[9] Chung T H, Shin Y M, Seo D C 2006 Contrib. Plasma Phys. 46 348
[10] Joh H M, Chung T H, Chung K S 2010 Thin Solid Films 518 6686
[11] Conway J, Sirse N, Karkari S K, Turner M M 2010 Plasma Sources Sci. Technol. 19 065002
[12] Draghici M, Stamate E 2010 J. Phys. D: Appl. Phys. 43 155205
[13] Stenzel R L 1976 Rev. Sci. Instrum. 47 603
[14] Piejak R B, Godyak V A, Garner R, Alexandrovich B M 2004 J. App. Phys. 95 3785
[15] Piejak R B, Al Kuzee J, Braithwaite N S J 2005 Plasma Sources Sci. Technol. 14 734
[16] Sun K, Xin Y, Huang X J, Yuan Q H, Ning Z Y 2008 Acta Phys. Sin. 57 6465 [孙恺, 辛煜, 黄晓江, 袁强华, 宁兆元 2008 57 6465]
[17] Schwabedissen A, Benck E C, Roberts J R 1998 Plasma Sources Sci. Technol. 7 119
[18] Malyshev M V, Fuller N C M, Bogart K H A, Donnelly V M 2000 J. Appl. Phys. 105 113307
[19] Tuszewski M, White R R 2002 Plasma Sources Sci. Technol. 11 338
[20] Zhou S, Tang Z H, Ji L L, Su X D, Xin Y 2012 Acta. Phys. Sin 61 075204 [邹帅, 唐中华, 吉亮亮, 苏晓东, 辛煜 2012 61 075204]
[21] Malyshev M V, Donnelly V M 2000 J. Appl. Phys. 87 1642
[22] Wang Z, Lichtenberg A J, Cohen R H 1998 Plasma Source Sci. Technol. 8 151
[23] Lallement L, Rhallabi A, Cardinaud C, Peignon-Fernandez M C, Alves L L 2009 Plasma Sources Sci. Technol. 18 025001
[24] Noguchi M, Hirao T, Shindo T H, Sakurauchi K, Yamagata Y, Uchino K, Kawai Y, Muraoka K 2003 Plasma Sources Sci. Technol. 12 403
[25] Franklin R N 2002 Plasma Sources Sci. Technol. 11 A31
[26] Stoffels E, Stofeels W W, Vender D, Kando M, Kroesen G M W, Hoog F J 1995 Phys. Rev. E 51 2435
[27] Katsch H M, Strum T, Quandt E, Dobele H F 2000 Plasma sources Sci. Technol. 9 323
[28] Passchier J P P, Goedheer W J 1993 J. Appl. Phys. 73 1073
[29] Lichtenberg A J, Kouznetsov I G, Lee Y T, Lieberman M A, Kaganovich I D, Tsendin L D 1997 Plasma Sources Sci. Technol. 6 437
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[1] Samukawa S, Mieno T 1996 Plasma sources Sci. Technol. 5 132
[2] Stoffels E, Stoffels W W, Kroesen G M W 2001 Plasma sources Sci. Technol. 10 311
[3] Crespo R M, Palop J I F, Hernández M A, Del Pino S B, Díaz-Cabrera J M, Ballesteros J 2006 J. App. Phys. 99 053303
[4] Doucet H J 1970 Phys. Lett. 33 A 283
[5] Sheridan T E 1999 J. phys. D: Appl. Phys. 32 1761
[6] Chabert P, Sheridan T E, Boswell R W, Perrin J 1999 Plasma Sources Sci. Technol. 8 561
[7] Boyd R L F, Thompson J B 1959 Proc. R. Soc. A 252 102
[8] Shindo M, Uchino S, Lchiki R, Yoshimura S, Kawai Y 2001 Rev. Sci. Instrum. 72 2288
[9] Chung T H, Shin Y M, Seo D C 2006 Contrib. Plasma Phys. 46 348
[10] Joh H M, Chung T H, Chung K S 2010 Thin Solid Films 518 6686
[11] Conway J, Sirse N, Karkari S K, Turner M M 2010 Plasma Sources Sci. Technol. 19 065002
[12] Draghici M, Stamate E 2010 J. Phys. D: Appl. Phys. 43 155205
[13] Stenzel R L 1976 Rev. Sci. Instrum. 47 603
[14] Piejak R B, Godyak V A, Garner R, Alexandrovich B M 2004 J. App. Phys. 95 3785
[15] Piejak R B, Al Kuzee J, Braithwaite N S J 2005 Plasma Sources Sci. Technol. 14 734
[16] Sun K, Xin Y, Huang X J, Yuan Q H, Ning Z Y 2008 Acta Phys. Sin. 57 6465 [孙恺, 辛煜, 黄晓江, 袁强华, 宁兆元 2008 57 6465]
[17] Schwabedissen A, Benck E C, Roberts J R 1998 Plasma Sources Sci. Technol. 7 119
[18] Malyshev M V, Fuller N C M, Bogart K H A, Donnelly V M 2000 J. Appl. Phys. 105 113307
[19] Tuszewski M, White R R 2002 Plasma Sources Sci. Technol. 11 338
[20] Zhou S, Tang Z H, Ji L L, Su X D, Xin Y 2012 Acta. Phys. Sin 61 075204 [邹帅, 唐中华, 吉亮亮, 苏晓东, 辛煜 2012 61 075204]
[21] Malyshev M V, Donnelly V M 2000 J. Appl. Phys. 87 1642
[22] Wang Z, Lichtenberg A J, Cohen R H 1998 Plasma Source Sci. Technol. 8 151
[23] Lallement L, Rhallabi A, Cardinaud C, Peignon-Fernandez M C, Alves L L 2009 Plasma Sources Sci. Technol. 18 025001
[24] Noguchi M, Hirao T, Shindo T H, Sakurauchi K, Yamagata Y, Uchino K, Kawai Y, Muraoka K 2003 Plasma Sources Sci. Technol. 12 403
[25] Franklin R N 2002 Plasma Sources Sci. Technol. 11 A31
[26] Stoffels E, Stofeels W W, Vender D, Kando M, Kroesen G M W, Hoog F J 1995 Phys. Rev. E 51 2435
[27] Katsch H M, Strum T, Quandt E, Dobele H F 2000 Plasma sources Sci. Technol. 9 323
[28] Passchier J P P, Goedheer W J 1993 J. Appl. Phys. 73 1073
[29] Lichtenberg A J, Kouznetsov I G, Lee Y T, Lieberman M A, Kaganovich I D, Tsendin L D 1997 Plasma Sources Sci. Technol. 6 437
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