衬底温度对反应磁控溅射W掺杂ZnO薄膜的微观结构及光电性能的影响

张翅; 陈新亮; 王斐; 闫聪博; 黄茜; 赵颖; 张晓丹; 耿新华

doi:10.7498/aps.61.238101

摘要

采用直流脉冲反应磁控溅射方法生长W掺杂ZnO (WZO)透明导电氧化物薄膜并研究了衬底温度对薄膜微观结构、组分、表面形貌以及光电性能的影响. 实验结果表明, WZO薄膜具有良好的(002)晶面择优取向, 且适当的衬底温度是制备优质WZO薄膜的关键因素. 随着衬底温度升高, 薄膜表面粗糙度先增大后减小; 衬底温度较高时, 薄膜的结构致密, 结晶质量好, 电子迁移率高. 当衬底温度为325 ℃时, WZO薄膜获得最低电阻率 9.25×10-3 Ω·cm, 方块电阻为56.24 Ω/⊄, 迁移率为11.8 cm2 V-1·s-1, 其在可见光及近红外区域(400—1500 nm)范围的平均透过率达到85.7%.

关键词:

Abstract

W-doped ZnO (WZO) thin films for thin film solar cells have been deposited by pulsed direct-current reactive magnetron sputtering. The microstructures, surface morphologies, optical and electrical properties of WZO thin films are investigated at different substrate temperatures. The experimental results indicate that a proper substrate temperature is the key factor for fabricating high-quality WZO thin films. The surface roughness of WZO thin films increases firstly from 15.65 nm to 37.60 nm, and then decreases from 37.60 nm to 11.07 nm with the increase of substrate temperature. Higher Hall mobility deposited at the higher temperatures is attributed to the compact structure and good crystallization quality. The WZO thin film prepared at the temperature of 325 ℃ presents excellent optical and electrical properties with an average transmittance of 85.7% in the wavelength range from 400 nm to 1500 nm, a low resistivity of 9.25× 10-3 Ω·cm, a sheet resistance of 56.24 Ω /sq and a high Hall mobility of 11.8 cm2·V-1·s-1.

Keywords:

作者及机构信息

1.
南开大学,光电子薄膜器件与技术研究所,光电子薄膜器件与技术天津市重点实验室, 光电信息技术科学教育部重点实验室, 天津 300071

基金项目: 国家重点基础研究计划(批准号: 2011CBA00705, 2011CBA00706, 2011CBA00707)、国家高技术研究发展计划(批准号: 2009A A050602)、科技部国际合作项目(批准号: 2009DFA62580)、天津市应用基础及前沿技术研究计划(批准号: 09JCYBJC06900) 和中央高校基本科研业务费专项资金项目(批准号: 65010341)资助的课题.

Authors and contacts

1.
Institute of Photo-Electronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Tianjin Key Laboratory of Opto-Electronic Information Science and Technology for Ministry of Education, Nankai University, Tianjin 300071, China

Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, 2011CBA00707), the National High Technology Research and Development Program of China (Grant No. 2009AA050602), International Cooperation Project between China-Greece Government (Grant No. 2009DFA62580), Tianjin Applied Basic Research Project and Cutting-edge Technology Research Plan, China (Grant No. 09JCYBJC06900), and the Fundamental Research Funds for the Central Universities, China (Grant No. 65010341).

参考文献

[1]	Kim H, Horwitz J S, Kim W H, Mäkinen A J, Kafafi Z H, Chrisey D B 2002 Thin Solid Films 420-421 539
[2]	Ellmer K 2001 J. Phys. D: Appl. Phys. 34 3097
[3]	Meier J, Spitznagel J, Kroll U, Bucher C, Faÿ S, Moriarty T, Shah A 2004 Thin Solid Films 451452 518
[4]	Gordon R G 2000 MRS Bull. 25 52
[5]	Meng Y, Yang X L, Chen H X, Shen J, Jiang Y M, Zhang Z J, Hua Z Y 2001 Thin Solid Films 394 218
[6]	Calnan S, Tiwari A N 2010 Thin Solid Films 518 1839
[7]	Parthiban S, Elangovan E, Ramamurthi K, Martins R , Fortunato E 2010 Sol. Energy Mater. Sol. Cells 94 406
[8]	Yamada N, Tatejima T, Ishizaki H, Nakada T 2006 Jpn. J. Appl. Phys. 45 1179
[9]	Gupta R K, Ghosh K, Mishra S R, Kahol P K 2008 Appl. Surf. Sci. 254 1661
[10]	Newhouse P F, Park C H, Keszler D A, Tate J, Nyholm P S 2005 Appl. Phys. Lett. 87 112108
[11]	Ren S R 2010 M. S. Dissertation (Tianjin: Hebei University of Technology) (in Chinese) [任世荣 2010 硕士学位论文 (天津:河北工业大学)]
[12]	Xiu X W, Cao Y P, Pang Z Y, Han S H 2009 J. Mater. Sci. Technol. 25 785
[13]	Lin Y C, Wang B L, Yen W T, Ha C T, Peng C 2010 Thin Solid Films 518 4928
[14]	Lin Y C, Wang B L, Yen W T, Shen C H 2011 Thin Solid Films 519 5571
[15]	Kuo C C, Liu C C, He S C, Chang J T, He J L 2011 Vacuum 85 961
[16]	Ngom B D, Mpahane T, Manyala N, Nemraoui O, Buttner U, Kana J B, Fasasi A Y, Maaza M, Beye A C 2009 Appl. Surf. Sci. 255 4153
[17]	Ngom B D, Sakho O, Manyala N, Kana J B, Mlungisi N, Guerbous L, Fasasi A Y, Maaza M, Beye A C 2009 Appl. Surf. Sci. 255 7314
[18]	Ngom B D, Chaker M, Manyala N, Lo B, Maaza M, Beye A C 2011 Appl. Surf. Sci. 257 6226
[19]	Zhang H F, Liu H F, Lei C X, Yuan C K, Zhou A P 2010 Vacuum 85 184
[20]	Zhang H F, Yang S G, Liu H F, Yuan C K 2011 Journal of Semiconductors 32 31
[21]	Wu C G 2010 M. S. Dissertation (Shanghai: Fudan University) (in Chinese) [吴臣国 2010 硕士学位论文 (上海:复旦大学)]
[22]	Chen X L, Geng X H, Xue J M, Zhang D K, Hou G F, Zhao Y 2006 J. Cryst. Growth 296 43
[23]	Meier J, Spitznagel J, Faÿ S, Bucher C, Graf U, Kroll U, Dubail S, Shah A 2002 Proceedings of the 29th IEEE Photovoltaic Specialists Conference New Orleans, USA, 2002 p1118
[24]	Li L N 2010 Ph. D. Dissertation (Tianjin: Nakai University) (in Chinese) [李林娜 2010 博士学位论文(天津:南开大学)]
[25]	Kim K K, Song J H, Jung H J, Choi W K, Park S J, Song J H 2000 J. Appl. Phys. 87 3573
[26]	Wang J Z, Li M C, Sallet V, Rego A, Martins R, Fortunato E 2011 Infrared and Laser Engineering 40 1490 (in Chinese) [王金忠, 李美成, Sallet V, Rego A, Martins R, Fortunato E 2011 红外与激光工程 40 1490]
[27]	Kluth O, Schope G, Hupkes J, Agashe C, Müller J, Rech B 2003 Thin Solid Films 442 80
[28]	Meng Y 2001 Ph. D. Dissertation (Shanghai: Fudan University) (in Chinese) [孟杨 2001 博士学位论文 (上海:复旦大学)]

施引文献

[1]	Kim H, Horwitz J S, Kim W H, Mäkinen A J, Kafafi Z H, Chrisey D B 2002 Thin Solid Films 420-421 539
[2]	Ellmer K 2001 J. Phys. D: Appl. Phys. 34 3097
[3]	Meier J, Spitznagel J, Kroll U, Bucher C, Faÿ S, Moriarty T, Shah A 2004 Thin Solid Films 451452 518
[4]	Gordon R G 2000 MRS Bull. 25 52
[5]	Meng Y, Yang X L, Chen H X, Shen J, Jiang Y M, Zhang Z J, Hua Z Y 2001 Thin Solid Films 394 218
[6]	Calnan S, Tiwari A N 2010 Thin Solid Films 518 1839
[7]	Parthiban S, Elangovan E, Ramamurthi K, Martins R , Fortunato E 2010 Sol. Energy Mater. Sol. Cells 94 406
[8]	Yamada N, Tatejima T, Ishizaki H, Nakada T 2006 Jpn. J. Appl. Phys. 45 1179
[9]	Gupta R K, Ghosh K, Mishra S R, Kahol P K 2008 Appl. Surf. Sci. 254 1661
[10]	Newhouse P F, Park C H, Keszler D A, Tate J, Nyholm P S 2005 Appl. Phys. Lett. 87 112108
[11]	Ren S R 2010 M. S. Dissertation (Tianjin: Hebei University of Technology) (in Chinese) [任世荣 2010 硕士学位论文 (天津:河北工业大学)]
[12]	Xiu X W, Cao Y P, Pang Z Y, Han S H 2009 J. Mater. Sci. Technol. 25 785
[13]	Lin Y C, Wang B L, Yen W T, Ha C T, Peng C 2010 Thin Solid Films 518 4928
[14]	Lin Y C, Wang B L, Yen W T, Shen C H 2011 Thin Solid Films 519 5571
[15]	Kuo C C, Liu C C, He S C, Chang J T, He J L 2011 Vacuum 85 961
[16]	Ngom B D, Mpahane T, Manyala N, Nemraoui O, Buttner U, Kana J B, Fasasi A Y, Maaza M, Beye A C 2009 Appl. Surf. Sci. 255 4153
[17]	Ngom B D, Sakho O, Manyala N, Kana J B, Mlungisi N, Guerbous L, Fasasi A Y, Maaza M, Beye A C 2009 Appl. Surf. Sci. 255 7314
[18]	Ngom B D, Chaker M, Manyala N, Lo B, Maaza M, Beye A C 2011 Appl. Surf. Sci. 257 6226
[19]	Zhang H F, Liu H F, Lei C X, Yuan C K, Zhou A P 2010 Vacuum 85 184
[20]	Zhang H F, Yang S G, Liu H F, Yuan C K 2011 Journal of Semiconductors 32 31
[21]	Wu C G 2010 M. S. Dissertation (Shanghai: Fudan University) (in Chinese) [吴臣国 2010 硕士学位论文 (上海:复旦大学)]
[22]	Chen X L, Geng X H, Xue J M, Zhang D K, Hou G F, Zhao Y 2006 J. Cryst. Growth 296 43
[23]	Meier J, Spitznagel J, Faÿ S, Bucher C, Graf U, Kroll U, Dubail S, Shah A 2002 Proceedings of the 29th IEEE Photovoltaic Specialists Conference New Orleans, USA, 2002 p1118
[24]	Li L N 2010 Ph. D. Dissertation (Tianjin: Nakai University) (in Chinese) [李林娜 2010 博士学位论文(天津:南开大学)]
[25]	Kim K K, Song J H, Jung H J, Choi W K, Park S J, Song J H 2000 J. Appl. Phys. 87 3573
[26]	Wang J Z, Li M C, Sallet V, Rego A, Martins R, Fortunato E 2011 Infrared and Laser Engineering 40 1490 (in Chinese) [王金忠, 李美成, Sallet V, Rego A, Martins R, Fortunato E 2011 红外与激光工程 40 1490]
[27]	Kluth O, Schope G, Hupkes J, Agashe C, Müller J, Rech B 2003 Thin Solid Films 442 80
[28]	Meng Y 2001 Ph. D. Dissertation (Shanghai: Fudan University) (in Chinese) [孟杨 2001 博士学位论文 (上海:复旦大学)]

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