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The nitrogen microhollow cathode discharge and Ti cathode sputtering, bombarded by ions (N2+, N+), have been studied using a two-dimensional PIC/MCC model. The behavior of ions (N2+, N+) and sputtered atom (Ti), and the thermalization process of the sputtered atoms in a nitrogen microhollow cathode discharge are simulated. The results show that hollow cathode effect is due to electron oscillations in the overlapping negative glow under our simulation condition. The densities of ions (N2+, N+) in the microhollow cathode discharge are two orders in magnitude greater than that in the conventional hollow cathode discharge; but the distributions and sizes of the mean energy of the ions (N2+, N+) are almost the same. The density of N2+ is fivefold as much as that of N+ in the microdischarge space; however, the maximum of mean energy of the latter is twice larger than the former. For various parameters (P, T, V), the densities of ions(N2+, N+) bombarding the cathode internal surface are almost uniformly distributed, and their mean energy are almost the same. When these atoms are 0.15 mm away from the cathode. The sputtered atoms are almost thermalized completely.
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Keywords:
- microhollow cathode /
- PIC/MC simulation /
- N2 plasma
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[2] Benedikt J, Focke K, Yanguas Gil A 2006 Appl. Phys. Lett. 89 25
[3] He S J, Ouyang J T, He F, Li S 2011 Physics of Plasmas 18 032102
[4] Makasheva K, Munoz Serrano E, Hagelaar G, Boeuf J P, Pitchford L C 2007 Plasma Phys. Control. Fusion 49 B233
[5] Mahony C M O, Gans T, Graham W G, Maguire P D, Petrović Z Lj 2008 Appl. Phys. Lett. 93 011501
[6] Xia G Q, Xue W H, Chen M L 2011 Acta Phys. Sin. 60 015201 (in Chinese) [夏广庆, 薛伟华, 陈茂林 2011 60 015201]
[7] Gu X W, Meng L, Yan Y, Sun Y Q 2009 Contrib. Plasma Phys. 49 40
[8] Lazzaroni C, Chabert P 2012 J. Appl. Phys. 111 053305
[9] Hong Y C, Uhm H S, Yi W J 2008 Appl. Phys. Lett. 93 051504
[10] Qiu L, Meng Y D, Ren Z X, Zhong S F 2006 Acta Phys. Sin. 55 5872 (in Chinese) [裘亮, 孟月东, 任兆杏, 钟少锋 2006 55 5872]
[11] Ignatkov A, Schwabedissen A, Leu G, Engemann J 2002 Presented at the 8th Int. Symp. High Pressure, Low Temperature PlasmaChemistry HAKONE VIII, Tartu, Estonia, 2002 p13
[12] Miyagawa Y, Nakadate H, Tanaka M, Ikeyama M, Miyagawa S 2005 Surface & Coatings Technology 196 155
[13] Gu X W, Meng L, Yan Y, Sun YQ 2009 Contrib. Plasma Phys. 49 40
[14] Yu W, Zhang L Z, Wang J L 2001 J. Phys. D: Appl. Phys. 34 3349
[15] Vahedi V, Dipeso G, Birdsall C K, Lieberman M A 1993 Plasma Sources Sci Technol 2 261
[16] Itikawa Y 2006 J. Phys. Chem. Ref. Data. 35 31
[17] Phelps A V 1991 J. Phys. Chem. Ref. Data. 20 557
[18] Matsunami N, Yamamura Y, Itikawa Y, Itoh N, Kazumata Y, Miyagawa S, Morita K, Shimizu R, Tawara H 1984 At. Data Nucl. Data Tables 31 1
[19] Bogaerts A, Straaten M, Gijbels R 1995 J. Appl. Phys. 77 1868
[20] Bardos L, Barankova H, Lebedev Y A 2003 Surface and Coatings Technology 163-164 654
[21] Baguer N, Bogaerts A, Gijbels R 2002 Spectrochimica Acta Part B 57 311
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[1] Xia G Q, Mao G W, Nader S 2008 Journal of Solid Rocket Technology 31 565
[2] Benedikt J, Focke K, Yanguas Gil A 2006 Appl. Phys. Lett. 89 25
[3] He S J, Ouyang J T, He F, Li S 2011 Physics of Plasmas 18 032102
[4] Makasheva K, Munoz Serrano E, Hagelaar G, Boeuf J P, Pitchford L C 2007 Plasma Phys. Control. Fusion 49 B233
[5] Mahony C M O, Gans T, Graham W G, Maguire P D, Petrović Z Lj 2008 Appl. Phys. Lett. 93 011501
[6] Xia G Q, Xue W H, Chen M L 2011 Acta Phys. Sin. 60 015201 (in Chinese) [夏广庆, 薛伟华, 陈茂林 2011 60 015201]
[7] Gu X W, Meng L, Yan Y, Sun Y Q 2009 Contrib. Plasma Phys. 49 40
[8] Lazzaroni C, Chabert P 2012 J. Appl. Phys. 111 053305
[9] Hong Y C, Uhm H S, Yi W J 2008 Appl. Phys. Lett. 93 051504
[10] Qiu L, Meng Y D, Ren Z X, Zhong S F 2006 Acta Phys. Sin. 55 5872 (in Chinese) [裘亮, 孟月东, 任兆杏, 钟少锋 2006 55 5872]
[11] Ignatkov A, Schwabedissen A, Leu G, Engemann J 2002 Presented at the 8th Int. Symp. High Pressure, Low Temperature PlasmaChemistry HAKONE VIII, Tartu, Estonia, 2002 p13
[12] Miyagawa Y, Nakadate H, Tanaka M, Ikeyama M, Miyagawa S 2005 Surface & Coatings Technology 196 155
[13] Gu X W, Meng L, Yan Y, Sun YQ 2009 Contrib. Plasma Phys. 49 40
[14] Yu W, Zhang L Z, Wang J L 2001 J. Phys. D: Appl. Phys. 34 3349
[15] Vahedi V, Dipeso G, Birdsall C K, Lieberman M A 1993 Plasma Sources Sci Technol 2 261
[16] Itikawa Y 2006 J. Phys. Chem. Ref. Data. 35 31
[17] Phelps A V 1991 J. Phys. Chem. Ref. Data. 20 557
[18] Matsunami N, Yamamura Y, Itikawa Y, Itoh N, Kazumata Y, Miyagawa S, Morita K, Shimizu R, Tawara H 1984 At. Data Nucl. Data Tables 31 1
[19] Bogaerts A, Straaten M, Gijbels R 1995 J. Appl. Phys. 77 1868
[20] Bardos L, Barankova H, Lebedev Y A 2003 Surface and Coatings Technology 163-164 654
[21] Baguer N, Bogaerts A, Gijbels R 2002 Spectrochimica Acta Part B 57 311
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