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通过双氧化限制垂直腔面发射激光器中电场、载流子密度、光场和热场空间耦合方程自洽数值求解，研究了垂直腔面发射激光器中阈值特性.得到了氧化层及有源区附近的电势，模拟电流孔的边缘效应，给出了不同双氧化限制电流孔半径下阈值电流密度、载流子密度、基模光场和热场的空间分布.发现了实现最小阈值电流的最佳限制电流孔半径，进而设计了双氧化限制垂直腔面发射激光器的结构.
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关键词:
- 双氧化限制垂直腔面发射激光器 /
- 自洽 /
- 阈值
In this paper, the coupling equations for electric field, carrier density, optical-field and temperature are simulated self-consistently in double oxide confined vertical cavity surface emitting laser therefore the characteristics threshold are studied. The potentials near the oxide layers and the activity region are obtained and the effect of current aperture edge is simulated. The distributions of threshold injected current density, carrier density, fundamental mode and temperature for different radii of double oxide confined current aperture are obtained. An appropriately confined radius of current aperture for minimum threshold injected current is found, and the structure of vertical cavity surface emitting laser is designed.[1] ［1］Soda H, Iga K, Kitahara C, Suematsu Y 1979 Jpn. J. Appl. Phys. 18 2329
[2] ［2］Zhao H D, Zhu X G, Zhang Y M 2002 J. Appl. Phys. 92 1
[3] ［3］Ronald G, Warrn H E, Choquette K D 1996 IEEE J. Quantum Electron. 32 607
[4] ［4］Wang T X, Guan B L, Guo X, Shen G D 2009 Acta Phys. Sin. 58 1694 （in Chinese）［王同喜、关宝璐、郭霞、沈光地 2009 58 1694］
[5] ［5］Zhao Y G, Zhang Y S， Huang X L 1999 Chin. J. Semicond. 20 963 （in Chinese） ［赵一广、张宇生、黄显玲 1999 半导体学报 20 963］
[6] ［6］Liu S A, Lin S M, Kang X J, Cheng P, Lu J Z, Wang Q M1999 Chin. J. Semicond. 20 1034 (in Chinese)［刘世安、林世鸣、康学军、程澎、陆建祖、王启明 1999 半导体学报 20 1034］
[7] ［7］Cai L G， Wu J 2008 Acta Phys. Sin. 57 3531（in Chinese）［蔡鲁刚、吴坚 2008 57 3531］
[8] ［8］Yang H, Guo X, Guan B L, Wang T X, Shen G D 2008 Acta Phys. Sin. 57 2959 （in Chinese）［杨浩、郭霞、关宝璐、王同喜、沈光地 2008 57 2959］
[9] ［9］Robert P S 2007 Semicond. Sci. Technol. 22 113
[10] ］Zhao H D, Song D Y, Zhang Z F， Sun J, Sun M, Wu Y, Wen X R 2004 Acta Phys. Sin. 53 3744 （in Chinese） ［赵红东、宋殿友、张智峰、孙静、孙梅、武一、温幸饶 2004 53 3744］
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[1] ［1］Soda H, Iga K, Kitahara C, Suematsu Y 1979 Jpn. J. Appl. Phys. 18 2329
[2] ［2］Zhao H D, Zhu X G, Zhang Y M 2002 J. Appl. Phys. 92 1
[3] ［3］Ronald G, Warrn H E, Choquette K D 1996 IEEE J. Quantum Electron. 32 607
[4] ［4］Wang T X, Guan B L, Guo X, Shen G D 2009 Acta Phys. Sin. 58 1694 （in Chinese）［王同喜、关宝璐、郭霞、沈光地 2009 58 1694］
[5] ［5］Zhao Y G, Zhang Y S， Huang X L 1999 Chin. J. Semicond. 20 963 （in Chinese） ［赵一广、张宇生、黄显玲 1999 半导体学报 20 963］
[6] ［6］Liu S A, Lin S M, Kang X J, Cheng P, Lu J Z, Wang Q M1999 Chin. J. Semicond. 20 1034 (in Chinese)［刘世安、林世鸣、康学军、程澎、陆建祖、王启明 1999 半导体学报 20 1034］
[7] ［7］Cai L G， Wu J 2008 Acta Phys. Sin. 57 3531（in Chinese）［蔡鲁刚、吴坚 2008 57 3531］
[8] ［8］Yang H, Guo X, Guan B L, Wang T X, Shen G D 2008 Acta Phys. Sin. 57 2959 （in Chinese）［杨浩、郭霞、关宝璐、王同喜、沈光地 2008 57 2959］
[9] ［9］Robert P S 2007 Semicond. Sci. Technol. 22 113
[10] ］Zhao H D, Song D Y, Zhang Z F， Sun J, Sun M, Wu Y, Wen X R 2004 Acta Phys. Sin. 53 3744 （in Chinese） ［赵红东、宋殿友、张智峰、孙静、孙梅、武一、温幸饶 2004 53 3744］
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