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Surface texturing is an effective method to reduce surface reflectance and improve the efficiency of silicon solar cell. In this paper, the black silicon antireflection coating is fabricated by using plasma immersion ion implantation. The surface morphology and reflectance are investigated by atomic force microscope and UV-VIS-NIR spectrophotometer, respectively. Results show that mountain-like structure with a depth of 0550 nm is fabricated on black silicon surface. Both the fractional area occupied by silicon and refractive index decrease smoothly with the increase of depth across the antireflection coating. The weighted average reflectance of black silicon is as low as 6.0% in a wavelength range of 3001000 nm. The depression mechanism of the optical reflectance is analyzed by simulating the structure with the transfer matrix method, and the simulation result fits the measured spectrum well.
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Keywords:
- plasma immersion ion implantation /
- refractive index /
- antireflection coating /
- black silicon
[1] Ma L L, Zhou Y C, Jiang N, Lu X, Shao J, Lu W, Ge J, Ding X M, Hou X Y 2006 Appl. Phys. Lett. 88 171907
[2] Parm I O, Kim K, Lim D G, Lee J H, Heo J H, Kim J, Kim D S, Lee S H, Yi J 2002 Sol. Energy Mater. Sol. Cells 74 97
[3] Zhou C L, Wang W J, Zhao L, Li H L, Diao H W, Cao X N 2010 Acta Phys. Sin. 59 5777 (in Chinese) [周春兰, 王文静, 赵磊, 李海玲, 刁宏伟, 曹晓宁 2010 59 5777]
[4] Cheng Y T, Ho J J, Tsai S Y, Ye Z Z, Lee W, Hwang D S, Chang S H, Chang C C, Wang K L 2011 Sol. Energy 85 87
[5] Her T H, Finlay R J, Wu C, Deliwala S 1998 Appl. Phys. Lett. 73 1673
[6] Fang J, Chen C S, Wang F, Liu S H 2011 Chin. Phys. B 20 074202
[7] Liu G Y, Tan X W, Yao J C, Wang Z, Xiong Z H 2008 Acta Phys. Sin. 57 514 (in Chinese) [刘光友, 谭兴文, 姚金才, 王振, 熊祖洪 2008 57 514]
[8] Yoo J, Yu G, Yi J 2011 Sol. Energy Mater. Sol. Cells 95 2
[9] Xia Y, Liu B W, Liu J, Shen Z N, Li C B 2011 Sol. Energy 85 1574
[10] Chattopadhyay S, Huang Y F, Jen Y J, Ganguly A, Chen K H, Chen L C 2010 Mater. Sci. Eng. R 69 1
[11] Maxwell Garnett J C 1904 Philos. Trans. R. Soc. London 203 385
[12] Liu Y S, Yang W H, Zhu Y Y, Chen J, Yang Z L, Yang J H 2009 Acta Phys. Sin. 58 4992 (in Chinese) [刘永生, 杨文华, 朱艳燕, 陈静, 杨正龙, 杨金焕 2009 58 4992]
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[1] Ma L L, Zhou Y C, Jiang N, Lu X, Shao J, Lu W, Ge J, Ding X M, Hou X Y 2006 Appl. Phys. Lett. 88 171907
[2] Parm I O, Kim K, Lim D G, Lee J H, Heo J H, Kim J, Kim D S, Lee S H, Yi J 2002 Sol. Energy Mater. Sol. Cells 74 97
[3] Zhou C L, Wang W J, Zhao L, Li H L, Diao H W, Cao X N 2010 Acta Phys. Sin. 59 5777 (in Chinese) [周春兰, 王文静, 赵磊, 李海玲, 刁宏伟, 曹晓宁 2010 59 5777]
[4] Cheng Y T, Ho J J, Tsai S Y, Ye Z Z, Lee W, Hwang D S, Chang S H, Chang C C, Wang K L 2011 Sol. Energy 85 87
[5] Her T H, Finlay R J, Wu C, Deliwala S 1998 Appl. Phys. Lett. 73 1673
[6] Fang J, Chen C S, Wang F, Liu S H 2011 Chin. Phys. B 20 074202
[7] Liu G Y, Tan X W, Yao J C, Wang Z, Xiong Z H 2008 Acta Phys. Sin. 57 514 (in Chinese) [刘光友, 谭兴文, 姚金才, 王振, 熊祖洪 2008 57 514]
[8] Yoo J, Yu G, Yi J 2011 Sol. Energy Mater. Sol. Cells 95 2
[9] Xia Y, Liu B W, Liu J, Shen Z N, Li C B 2011 Sol. Energy 85 1574
[10] Chattopadhyay S, Huang Y F, Jen Y J, Ganguly A, Chen K H, Chen L C 2010 Mater. Sci. Eng. R 69 1
[11] Maxwell Garnett J C 1904 Philos. Trans. R. Soc. London 203 385
[12] Liu Y S, Yang W H, Zhu Y Y, Chen J, Yang Z L, Yang J H 2009 Acta Phys. Sin. 58 4992 (in Chinese) [刘永生, 杨文华, 朱艳燕, 陈静, 杨正龙, 杨金焕 2009 58 4992]
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