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Polyethylene (PE) discs prepared by hot-pressing, each with a thickness of 0.8 mm, are surface fluorinated in a laboratory vessel by an F2/N2 mixture containing 12.5% F2 by volume at different temperatures of 35, 55, and 70 ℃ for the same time of 2 h. The influence of fluorination temperature on space charge accumulation in PE is investigated by the pressure wave propagation method. The results show an obvious decrease in space charge accumulation in the fluorinated sample subject to a direct current high voltage with the increase of fluorination temperature, and there exists almost no charge accumulation in the sample fluorinated at 70 ℃. Attenuated total reflection infrared analyses indicate a substantial change in chemical composition of the sample surface layers by the fluorinations and an obvious increase in degree of fluorination with fluorination temperature increasing. Contact angle measurements and surface energy calculations indirectly indicate a significant increase in permittivity of the fluorinated layers by the fluorinations. Open-circuit thermally stimulated discharge current measurements further reveal different charge trapping properties of the fluorinated layers and the improved barrier properties of the fluorinated layer to the diffusion of the chemical species from the semi-conductive electrode to the PE with increase of fluorination temperature, thus indicating a corresponding decrease in free volume of the surface layer. The decrease in the free volume plays a more important role in suppressing the space charge accumulation, compared with the increase in permittivity and the change in charge trap.
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Keywords:
- polyethylene /
- surface fluorination temperature /
- space charge /
- fluorinated layer properties
[1] Montanari G C, Fabiani D 2000 IEEE Trans. DEI 7 322
[2] Zhang Y, Lewiner J, Alquie C, Hampton N 1996 IEEE Trans. DEI 3 778
[3] Lewis T J 2002 IEEE Trans. DEI 9 717
[4] Jones J P, Llewellyn J P Lewis T J 2005 IEEE Trans. DEI 12 951
[5] Chen G, Tanaka Y, Takada T, Zhong L 2004 IEEE Trans. DEI 11 113
[6] Murakami Y, Mitsumoto S, Fukuma M, Hozumi N, Nagao M 20002 Electr. Eng. Jpn. 138 19
[7] An Z, Yang Q, Xie C, Jiang Y, Zheng F, Zhang Y 2009 J. Appl. Phys. 105 064102
[8] An Z, Xie C, Jiang Y, Zheng F, Zhang Y 2009 J. Appl. Phys. 106 104112
[9] Jiang Y, An Z, Liu C, Zheng F, Zhang Y 2010 IEEE Trans. DEI 17 1814
[10] An Z L, Liu C X, Chen X, Zheng F H, Zhang Y W 2012 Acta Phys. Sin. 61 098201 (in Chinese) [安振连, 刘晨霞, 陈暄, 郑飞虎, 张冶文 2012 61 098201]
[11] Owens D K, Wendt R C 1969 J. Appl. Polym. Sci. 13 1741
[12] Lewiner J 1986 IEEE Trans. Electr. Insul. EI-21 351
[13] Liu C X, An Z L, Chen X, Zheng F H, Zhang Y 2011 Proceedings of International Symposium on Electrical Insulating Materials (ISEIM) Kyoto, Japan, September 6-11, 2011 p 54
[14] Kharitonov A P 2008 Prog. Org. Coat. 61 192
[15] Ho Y F F, Chen G, Davies A E, Swingler S G, Sutton S J, Hampton R N 2003 IEEE Trans. DEI 10 393
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[1] Montanari G C, Fabiani D 2000 IEEE Trans. DEI 7 322
[2] Zhang Y, Lewiner J, Alquie C, Hampton N 1996 IEEE Trans. DEI 3 778
[3] Lewis T J 2002 IEEE Trans. DEI 9 717
[4] Jones J P, Llewellyn J P Lewis T J 2005 IEEE Trans. DEI 12 951
[5] Chen G, Tanaka Y, Takada T, Zhong L 2004 IEEE Trans. DEI 11 113
[6] Murakami Y, Mitsumoto S, Fukuma M, Hozumi N, Nagao M 20002 Electr. Eng. Jpn. 138 19
[7] An Z, Yang Q, Xie C, Jiang Y, Zheng F, Zhang Y 2009 J. Appl. Phys. 105 064102
[8] An Z, Xie C, Jiang Y, Zheng F, Zhang Y 2009 J. Appl. Phys. 106 104112
[9] Jiang Y, An Z, Liu C, Zheng F, Zhang Y 2010 IEEE Trans. DEI 17 1814
[10] An Z L, Liu C X, Chen X, Zheng F H, Zhang Y W 2012 Acta Phys. Sin. 61 098201 (in Chinese) [安振连, 刘晨霞, 陈暄, 郑飞虎, 张冶文 2012 61 098201]
[11] Owens D K, Wendt R C 1969 J. Appl. Polym. Sci. 13 1741
[12] Lewiner J 1986 IEEE Trans. Electr. Insul. EI-21 351
[13] Liu C X, An Z L, Chen X, Zheng F H, Zhang Y 2011 Proceedings of International Symposium on Electrical Insulating Materials (ISEIM) Kyoto, Japan, September 6-11, 2011 p 54
[14] Kharitonov A P 2008 Prog. Org. Coat. 61 192
[15] Ho Y F F, Chen G, Davies A E, Swingler S G, Sutton S J, Hampton R N 2003 IEEE Trans. DEI 10 393
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