Charging effects of SiO2 thin films under defocused electron beam irradiation

Li Wei-Qin; Zhang Hai-Bo; Lu Jun

doi:10.7498/aps.61.027302

Abstract

Based on a three-dimensional self-consistent numerical model with consideration of electron scattering, trapping and transport, the charging effects due to low-energy defocused electron beam irradiation are simulated for a SiO2 thin film with a grounded conductive substrate. The results show that because of electron drift and diffusion, electrons can transit the electron scattering region, forming negative space charges. The space charge is, therefore, positive and negative within and outside the scattering region, respectively. Some electrons can flow to the conductive substrate, forming the leakage current, and the transient negative charging process tends to equilibrium as the leakage current increases. In comparison, the transient positive charging process approaches equilibrium with the number of returned electrons increasing due to the positive surface potential. In the equilibrium state, the surface potential of the film negatively charged decreases with film thickness and trap density increasing; it increases with electron mobility and dielectric constant. However, the equilibrium surface potential of the film positively charged varies slightly with film parameter.

Keywords:

Authors and contacts

1.
School of Automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, China;
2.
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Department of Electronic Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60476018), the Scientific Research Program Funded by Shaanxi Provincial Education Department (Program No. 11JK0926), and the Doctor Research Start Fund of Xian University of Technology (Grant No. 105-211005).

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Cited By

[1]	Cazaux J 2005 J. Microsc. 217 16
[2]
[3]	Reimer L 1993 Image Formation in Low Voltage Scanning Electron Microscopy (Bellingham: SPIE Optical Engineering Press) p71
[4]
[5]	Abe H, Babin S, Borisov S, Hamaguchi A, Kadowaki M, Miyano Y, Yamazaki Y 2009 J. Vac. Sci. Technol. B 27 1039
[6]
[7]	Zhao S L, Bertrand P 2011 Chin. Phys. B 20 037901
[8]	Joo J, Chow B Y, Jacobson J M 2006 Nano Lett 6 2021
[9]
[10]	Sun X, You S F, Xiao P, Ding Z J 2006 Acta Phys. Sin. 55 148 (in Chinese) [孙霞, 尤四方, 肖沛, 丁泽军 2006 55 148]
[11]
[12]	Song H Y, Zhang Y L, Wei Q, Kong X D 2005 High Energy Phys. Nucl. Phys. 29 1219 (in Chinese) [宋会英, 张玉林, 魏强, 孔祥东 2005 高能物理与核物理 29 1219]
[13]
[14]
[15]	Ren L M Chen B Q, Tan Z Y 2002 Acta Phys. Sin. 51 512 (in Chinese) [任黎明, 陈宝钦, 谭震宇 2002 51 512]
[16]	Paulmier T, Dirassen B, Payan D, Eesbeek M V 2009 IEEE Trans. Dielectr. Electr. Insul. 16 682
[17]
[18]	Quan R H, Zhang Z L, Han J W, Huang J G, Yan X J 2009 Acta Phys. Sin. 58 1205 (in Chinese) [全荣辉, 张振龙, 韩建伟, 黄建国, 闫小娟 2009 58 1205]
[19]
[20]
[21]	Huang J G, Han J W 2010 Acta Phys. Sin. 59 2907 (in Chinese)[黄建国, 韩建伟 2010 59 2907]
[22]	Qin X G, He D Y, Wang J 2009 Acta Phys. Sin. 58 684 (in Chinese) [秦晓刚, 贺德衍, 王骥 2009 58 684]
[23]
[24]
[25]	Sessler G M 1998 Electrets (New York: Springer-Verlag)
[26]
[27]	Zhang X Q, Sessler G M, Xia Z F, Zhang Y W 2001 Acta Phys. Sin. 50 293 (in Chinese) [张晓青, Sessler G M, 夏钟福, 张冶文 2001 50 293]
[28]
[29]	Cazaux J 2010 J. Electron Spectrosc. Relat. Phenom. 176 58
[30]	Ura K 1998 J. Electron Microsc. 47 143
[31]
[32]	Nakasugi T, Ando A, Sugihara K, Miyoshi M, Okumura K 2001 Proc. SPIE 4343 334
[33]
[34]
[35]	Koike T, Ikeda T, Miyoshi M, Okumura K, Ura K 2002 Jpn. J. Appl. Phys. 41 915
[36]
[37]	Zhang H B, Feng R J, Ura K 2004 Sci. Prog. 87 249
[38]
[39]	Zhu S Q, Rau E I, Yang F H 2003 Semicond. Sci. Technol. 18 361
[40]
[41]	Cornet N, Goeuriot D, Guerret-Picourt C, Juv D, Trheux D, Touzin M, Fitting H J 2008 J. Appl. Phys. 103 064110
[42]	Askri B, Raouadi K, Renoud R, Yangui B 2009 J. Electrostatics 67 695
[43]
[44]	Rau E I, Fakhfakh S, Andrianov M V, Evstafeva E N, Jbara O, Rondot S, Mouze D 2008 Nucl. Instrum. Methods Phys. Res. Sect. B 266 719
[45]
[46]
[47]	Mizuhara Y, Kato J, Nagatomi T, Takai Y, Inoue M 2002 J. Appl. Phys. 92 6128
[48]	Ohya K, Inai K, Kuwada H, Hayashi T, Saito M 2008 Surf. Coat. Technol. 202 5310
[49]
[50]
[51]	Bai M, Pease R F W 2004 J. Vac. Sci. Technol. B 22 2907
[52]
[53]	Taylor D M, Mehdi Q H 1979 J. Phys. D 12 2253
[54]
[55]	Li W Q, Zhang H B 2008 Acta Phys. Sin. 57 3219 (in Chinese) [李维勤, 张海波 2008 57 3219]
[56]	Li W Q, Zhang H B 2010 Appl. Surf. Sci. 256 3482
[57]
[58]
[59]	Li W Q, Zhang H B 2010 Micron 41 416
[60]	Li W Q, Mu K, Xia R H 2011 Micron 42 443
[61]
[62]	Czyzewski Z, MacCallum D O, Romig A, Joy D C 1990 J. Appl. Phys. 68 306
[63]
[64]
[65]	Shimizu R, Ding Z J 1992 Rep. Prog. Phys. 55 487
[66]
[67]	Joy D C 1995 Monte Carlo Modeling for Electron Microscopy and Microanalysis (New York: Oxford University Press) p27
[68]	Ying M H, Thong J T L 1994 Meas. Sci. Technol. 5 1089
[69]
[70]	Cazaux J 2004 J. Appl. Phys. 95 731
[71]
[72]	Zhang H B, Feng R J, Ura K 2003 Chin. Phys. Lett. 20 2011
[73]
[74]	Touzin M, Goeuriot D, Guerret-Picourt C, Juv D, Trheux D, Fitting H J 2006 J. Appl. Phys. 99 114110
[75]
[76]
[77]	Renoud R, Mady F, Attard C, Bigarr J, Ganachaud J P 2004 Phys. Status Solidi A 201 2119
[78]	Ning T H 1976 J. Appl. Phys. 47 3203
[79]
[80]
[81]	Cazaux J 1996 X-Ray Spectrom. 25 265
[82]	Renoud R, Attard C, Ganachaud J-P, Bartholome S, Dubus A 1998 J. Phys.: Condens. Matter 10 5821.
[83]
[84]
[85]	Bai M Pease R F W Meisburger W D 2003 J. Vac. Sci. Technol. B 21 106

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Vol. 61, Issue 2 - 2012-01-20

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