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Based on the kp theory, the valence-band dispersion model for biaxial strained Ge/Si1-xGex is derived by taking strained Hamiltonian perturbation into account. The model can be used to calculate the valence band structure and hole effective mass along arbitrarily k wavevector direction in strained Ge grown on arbitrarily oriented relaxed Si1-xGex virtual substrate. The MATLAB simulation results of the model show that by comparison with relaxed Ge, the more anisotropy of the hole effective mass occurs in strained Si1-xGex and the hole effective mass of the top valence band decreases with the increase of Ge fraction. The results can supply valuable references to the conduction channel design related to stress and orientation in the Si-based strained Ge MOS devices and integrated circuits.
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Keywords:
- strained Ge /
- valence-band structure /
- kp theory /
- dispersion model
[1] Tu H L(Translator) 2010 Gemanium-based Technologies from Materials to Devices (Beijing: Metallurgical Industry Press) p326 (in Chinese) [C.克莱, E.西蒙著,屠海令等译 2010 半导体锗材料与器件 (北京:冶金工业出版社) 第326页]
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[3] Wei G (Translator) 2010 China Integrated Circult 4 (131): 17 [为国(译) 2010 中国集成电路 4 (131):17]
[4] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827 [宋建军, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2007 中国物理 16 3827]
[5] Phama A T, Jungemann C, Meinerzhagen B 2008 Solid-State Electronics 52 1437
[6] Lee M L, Leitz C W, Cheng Z, Pitera A J, Langdo T, Currie M T, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 Appl. Phys. Lett. 79 3344
[7] Shang H, Chu J Q, Wang X, Mooney P M, Lee K, Ott J, Rim K, Chan K, Guarini K, Ieong M 2004 2004 Symposium on VLSI Technology Honolulu June 15-17, 2004 p204
[8] Song J J,Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 7228 (in Chinese) [宋建军, 张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 2008 57 7228]
[9] Sang Kook Chun, Kang L Wang 1992 IEEE Transaction on Electron Device 39 2153
[10] Peopel R 1986 Journal of Quantum Electronics 22 1696
[11] Smirnov S, Kosina H 2004 Solid-State Electronics 48 1325
[12] Li M F 1998 Semiconductor Physics (Beijing:Science Press) p64(in Chinese) [李名复 1998 半导体物理学 (北京:科学出版社) 第64页]
[13] Yu J Z (Translator) 2002 Properties of Strained and Relaxed Silicon Germanium (Beijing: National Defence Industrial Press) p73 (in Chinese) [余金中(译) 2002 硅锗的性质 (北京:国防工业出版社) 第73页]
[14] Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Sixth Ed.) (Beijing: Publishing House Of Electronics Industry) p18 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2003 半导体物理学(第6版) (北京: 电子工业出版社) 第18页]
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[1] Tu H L(Translator) 2010 Gemanium-based Technologies from Materials to Devices (Beijing: Metallurgical Industry Press) p326 (in Chinese) [C.克莱, E.西蒙著,屠海令等译 2010 半导体锗材料与器件 (北京:冶金工业出版社) 第326页]
[2] Nayak D K, Woo J C S, Park J S, Wang K L, Macwilliams K P 1991 Electron Device Letters 15 (1-4):19
[3] Wei G (Translator) 2010 China Integrated Circult 4 (131): 17 [为国(译) 2010 中国集成电路 4 (131):17]
[4] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827 [宋建军, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2007 中国物理 16 3827]
[5] Phama A T, Jungemann C, Meinerzhagen B 2008 Solid-State Electronics 52 1437
[6] Lee M L, Leitz C W, Cheng Z, Pitera A J, Langdo T, Currie M T, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 Appl. Phys. Lett. 79 3344
[7] Shang H, Chu J Q, Wang X, Mooney P M, Lee K, Ott J, Rim K, Chan K, Guarini K, Ieong M 2004 2004 Symposium on VLSI Technology Honolulu June 15-17, 2004 p204
[8] Song J J,Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 7228 (in Chinese) [宋建军, 张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 2008 57 7228]
[9] Sang Kook Chun, Kang L Wang 1992 IEEE Transaction on Electron Device 39 2153
[10] Peopel R 1986 Journal of Quantum Electronics 22 1696
[11] Smirnov S, Kosina H 2004 Solid-State Electronics 48 1325
[12] Li M F 1998 Semiconductor Physics (Beijing:Science Press) p64(in Chinese) [李名复 1998 半导体物理学 (北京:科学出版社) 第64页]
[13] Yu J Z (Translator) 2002 Properties of Strained and Relaxed Silicon Germanium (Beijing: National Defence Industrial Press) p73 (in Chinese) [余金中(译) 2002 硅锗的性质 (北京:国防工业出版社) 第73页]
[14] Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Sixth Ed.) (Beijing: Publishing House Of Electronics Industry) p18 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2003 半导体物理学(第6版) (北京: 电子工业出版社) 第18页]
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