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The valence band structure of uniaxial 〈111〉 stressed silicon is calculated in the frame of kp perturbation method and compared with that of unstressed silicon. The valence band energy level shifting, splitting, and variation of the effective mass in the vicinity of the point are presented for different uniaxail 〈111〉 stresses. The effective masses for the heavy and light hole bands in unstressed, our calculation results are in good agreement with the obtained published results of bulk silicon. The study extends the selective range of optimum stresses and crystal direction configuration of conduction channels for uniaxial stressed silicon devices. The obtained results of splitting energy and effective mass may serve as the reference for the calculation of other physical parameters of uniaxial 〈111〉 stressed silicon.
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Keywords:
- uniaxial stressed silicon /
- kp method /
- valence band structure
[1] Shifren L, Wang X, Matagne P 2004 Appl. Phys. Lett. 85 6188
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[12] Kim J, Fischetti M V 2010 J. Appl. Phys. 108 013710
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[16] [17] Guillaume T, Mouis M 2006 Solid State Electron. 50 701
[18] [19] Siddhartha D, Enzo U, Hans K, Tibor G 2007 IEEE Trans. Nanotech. 6 97
[20] Lin J Y, Tang Y H, Tsai M H 2009 Comput. Phys. Commun. 180 659
[21] [22] Luttinger J M, Kohn W 1955 Phys. Rev. 97 869
[23] [24] Calvin Y P, Chuang S L 1992 Phys. Rev. B 46 4110
[25] [26] [27] Ye L X 2007 Semiconductor Physics (Beijing: Higher Education Press) p51 (in Chinese) [叶良修2007 半导体物理学(北京:高等教育出版社) 第51页]
[28] Fan X F, Register L F, Winstead B, Foisy M C 2007 IEEE Trans. Electron Dev. 54 291
[29] [30] [31] Everett X W, Philippe M, Lucian S, Borna O, Roza K, Stephen C, Mark S 2006 IEEE Trans. Electron Dev. 53 1840
[32] Ramos L E, Teles L K, Scolfaro L M R, Castineira J L P, Rosa A L, Leite J R 2001 Phys. Rev. B 63 165210
[33] [34] [35] Gu Z Y, Tian L L, Fu L W 1995 Semiconductor Physics (Beijing: Publishing House of Electronics Industry) p46 (in Chinese)[顾祖毅、田立林、富力文1995 半导体物理学(北京:电子工业出版社) 第46页]
[36] [37] Sun G Y, Sun Y K, Nishida T, Thompson S E 2007 J. Appl. Phys. 102 084501
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[1] Shifren L, Wang X, Matagne P 2004 Appl. Phys. Lett. 85 6188
[2] [3] Sun Y K, Sun G Y, Parthasarathy S 2006 Mater. Sci. Eng. B 135 179
[4] [5] Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Chin. Phys. 19 117309
[6] [7] Sun Y, Thompson S E, Nishida T 2007 J. Appl. Phys. 101 104503
[8] [9] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2009 Acta Phys. Sin. 58 7947 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2009 58 7947]
[10] [11] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[12] Kim J, Fischetti M V 2010 J. Appl. Phys. 108 013710
[13] [14] [15] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2009 Acta Phys. Sin. 58 4958 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2009 58 4958]
[16] [17] Guillaume T, Mouis M 2006 Solid State Electron. 50 701
[18] [19] Siddhartha D, Enzo U, Hans K, Tibor G 2007 IEEE Trans. Nanotech. 6 97
[20] Lin J Y, Tang Y H, Tsai M H 2009 Comput. Phys. Commun. 180 659
[21] [22] Luttinger J M, Kohn W 1955 Phys. Rev. 97 869
[23] [24] Calvin Y P, Chuang S L 1992 Phys. Rev. B 46 4110
[25] [26] [27] Ye L X 2007 Semiconductor Physics (Beijing: Higher Education Press) p51 (in Chinese) [叶良修2007 半导体物理学(北京:高等教育出版社) 第51页]
[28] Fan X F, Register L F, Winstead B, Foisy M C 2007 IEEE Trans. Electron Dev. 54 291
[29] [30] [31] Everett X W, Philippe M, Lucian S, Borna O, Roza K, Stephen C, Mark S 2006 IEEE Trans. Electron Dev. 53 1840
[32] Ramos L E, Teles L K, Scolfaro L M R, Castineira J L P, Rosa A L, Leite J R 2001 Phys. Rev. B 63 165210
[33] [34] [35] Gu Z Y, Tian L L, Fu L W 1995 Semiconductor Physics (Beijing: Publishing House of Electronics Industry) p46 (in Chinese)[顾祖毅、田立林、富力文1995 半导体物理学(北京:电子工业出版社) 第46页]
[36] [37] Sun G Y, Sun Y K, Nishida T, Thompson S E 2007 J. Appl. Phys. 102 084501
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