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Understanding of magnetic domain wall dynamic behavior is one of the important issues in the realization of spintronic device based on domain wall motion. We investigate the dynamic behaviors of the magnetic domain wall propagation in L-shaped ferromagnetic nanowires under external magnetic driving fields. By micromagnetic simulation, we observe a dynamic characteristic of the magnetic domain wall in a ferromagnetic nanowire with varying the external field. By changing the nanowire thickness, we examine the influence of the demagnetizing field from the nanowire surface on the domain wall dynamics under a magnetic driving field after Walker breakdown field. Using an auxilliary magnetic field perpendicular to the nanowires, we analyze the effect of the demagnetizing field on the domain wall dynamic behaviors. The results show that the stronger external field or the thicker nanowire can enhance the generation of the demagnetizing field on the nanowire surface, leading to the occurrence of the Walker breakdown phenomenon with the periodic change of the inner spin structure of the domain wall during the domain wall propagation in the nanowires. By using an auxilliary magnetic field perpendicular to the nanowires, we find that the strength and the direction of the demagnetizing field can be modulated. It implies that the dynamic behavior of domain wall propagation in the nanowire is controllable.
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Keywords:
- ferromagnetic nanowire /
- magnetic domain wall motion /
- Walker breakdown /
- micromagnetic simulation
[1] Hubert A, Schafer R 1998 Magnetic Domains: The Analysis of Magnetic Microstructures (Berlin: Springer)
[2] Stöhr J, Siegmann H C 2006 Magnetism: From Fundamentals to Nanoscale Dynamics (Berlin: Springer)
[3] McMichael R D, Eicke J, Donahue M J, Porter D G 2000 J. Appl. Phys. 87 7058
[4] Allwood D A, Xiong G, Cowburn R P 2004 Appl. Phys. Lett. 85 2848
[5] Hara M, Kimura T, Otani Y 2007 Appl. Phys. Lett. 90 242504
[6] Piao H G, Djuhana D, On S K, Yu S C, Kim D H 2009 Appl. Phys. Lett. 94 052501
[7] Meier G, Bolte M, Eiselt R, Kraeuger B, Kim D H, Fischer P 2007 Phys. Rev. Lett. 98 187202
[8] Yamanouchi M, Chiba D, Matsukura F, Ohno H 2004 Nature 428 539
[9] Allwood D A, Xiong G, Faulkner C C, Atkinson D, Petit D, Cowburn R P 2005 Science 309 1688
[10] Parkin S S P, Hayashi M, Thomas L 2008 Science 320 190
[11] Hayashi M, Thomas L, Moriya R, Rettner C, Parkin S S P 2008 Science 320 209
[12] Lee J Y, Lee K S, Choi S, Guslienko K Y, Kim S K 2007 Phys. Rev. B 76 184408
[13] Piao H G, Shim J H, Lee S H, Djuhana D, Oh S K, Yu S C, Kim D H 2009 IEEE Trans. Magn. 45 3926
[14] Lu H P, Han M G, Deng L J, Liang D F, Ou Y 2010 Acta Phys. Sin. 59 2090 (in Chinese) [陆海鹏, 韩满贵, 邓龙江, 梁迪飞, 欧雨 2010 59 2090]
[15] Hayashi M, Thomas L, Rettner C, Moriya R, Parkin S S P 2007 Nat. Phys. 3 21
[16] Koyama T, Chiba D, Ueda K, Kondou K, Tanigawa H, Fukami S, Suzuki T, Ohshima N, Ishiwata N, Nakatani Y, Kobayashi K, Ono T 2011 Nat. Mat. 10 194
[17] Schryer N L, Walker L R 1974 J. Appl. Phys. 45 5406
[18] Piao H G, Djuhana D, Lee S H, Shim J H, Jun S H, Kim D H 2009 Sae Mulli. 58 715
[19] Donahue M J, Porter D G 1999 NIST Interagency Report No. NISTIR 6376
[20] Rave W, Hubert A 2000 IEEE Trans. Magn. 36 3886
[21] Thiaville A, García J M, Miltat J 2002 J. Mag. Mag. Mater. 242-245 1061
[22] Porter D G, Donahue M J 2004 J. Appl. Phys. 95 6729
[23] Landau L D, Lifshitz E M 1935 Phys. Z. Sowiet 8 153
[24] Gilbert T L 2004 IEEE Trans. Magn. 40 3443
[25] Stöhr J, Siegmann H C 2006 Magnetism Form Fundamentals to Nanoscale Dynamics (Berlin: Springer-Verlag) p85
[26] Hayashi M, Thomas L, Rettner C, Moriya R, Jiang X, Parkin S S P 2006 Phys. Rev. Lett. 97 207205
[27] Djuhana D, Piao H G, Lee S H, Kim D H, Ahn S M, Choe S B 2010 Appl. Phys. Lett. 97 022511
[28] Kunz A, Reiff S C 2008 Appl. Phys. Lett. 93 082503
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[1] Hubert A, Schafer R 1998 Magnetic Domains: The Analysis of Magnetic Microstructures (Berlin: Springer)
[2] Stöhr J, Siegmann H C 2006 Magnetism: From Fundamentals to Nanoscale Dynamics (Berlin: Springer)
[3] McMichael R D, Eicke J, Donahue M J, Porter D G 2000 J. Appl. Phys. 87 7058
[4] Allwood D A, Xiong G, Cowburn R P 2004 Appl. Phys. Lett. 85 2848
[5] Hara M, Kimura T, Otani Y 2007 Appl. Phys. Lett. 90 242504
[6] Piao H G, Djuhana D, On S K, Yu S C, Kim D H 2009 Appl. Phys. Lett. 94 052501
[7] Meier G, Bolte M, Eiselt R, Kraeuger B, Kim D H, Fischer P 2007 Phys. Rev. Lett. 98 187202
[8] Yamanouchi M, Chiba D, Matsukura F, Ohno H 2004 Nature 428 539
[9] Allwood D A, Xiong G, Faulkner C C, Atkinson D, Petit D, Cowburn R P 2005 Science 309 1688
[10] Parkin S S P, Hayashi M, Thomas L 2008 Science 320 190
[11] Hayashi M, Thomas L, Moriya R, Rettner C, Parkin S S P 2008 Science 320 209
[12] Lee J Y, Lee K S, Choi S, Guslienko K Y, Kim S K 2007 Phys. Rev. B 76 184408
[13] Piao H G, Shim J H, Lee S H, Djuhana D, Oh S K, Yu S C, Kim D H 2009 IEEE Trans. Magn. 45 3926
[14] Lu H P, Han M G, Deng L J, Liang D F, Ou Y 2010 Acta Phys. Sin. 59 2090 (in Chinese) [陆海鹏, 韩满贵, 邓龙江, 梁迪飞, 欧雨 2010 59 2090]
[15] Hayashi M, Thomas L, Rettner C, Moriya R, Parkin S S P 2007 Nat. Phys. 3 21
[16] Koyama T, Chiba D, Ueda K, Kondou K, Tanigawa H, Fukami S, Suzuki T, Ohshima N, Ishiwata N, Nakatani Y, Kobayashi K, Ono T 2011 Nat. Mat. 10 194
[17] Schryer N L, Walker L R 1974 J. Appl. Phys. 45 5406
[18] Piao H G, Djuhana D, Lee S H, Shim J H, Jun S H, Kim D H 2009 Sae Mulli. 58 715
[19] Donahue M J, Porter D G 1999 NIST Interagency Report No. NISTIR 6376
[20] Rave W, Hubert A 2000 IEEE Trans. Magn. 36 3886
[21] Thiaville A, García J M, Miltat J 2002 J. Mag. Mag. Mater. 242-245 1061
[22] Porter D G, Donahue M J 2004 J. Appl. Phys. 95 6729
[23] Landau L D, Lifshitz E M 1935 Phys. Z. Sowiet 8 153
[24] Gilbert T L 2004 IEEE Trans. Magn. 40 3443
[25] Stöhr J, Siegmann H C 2006 Magnetism Form Fundamentals to Nanoscale Dynamics (Berlin: Springer-Verlag) p85
[26] Hayashi M, Thomas L, Rettner C, Moriya R, Jiang X, Parkin S S P 2006 Phys. Rev. Lett. 97 207205
[27] Djuhana D, Piao H G, Lee S H, Kim D H, Ahn S M, Choe S B 2010 Appl. Phys. Lett. 97 022511
[28] Kunz A, Reiff S C 2008 Appl. Phys. Lett. 93 082503
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