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Based on the tight-binding model and the Greens function method, the effects of atomic disorder of lattice configuration and the orientation disorder of side radical spins on the spin polarized transport through a metal/organic-ferromagnet/metal structure are investigated. The results show that the atomic disorder reduces the threshold voltage of the device and suppresses the conducting current. The staircase structure of the current-voltage curve for a molecular device is eliminated when the disorder is enhanced. The current keeps a high spin polarization if the atomic disorder is not strong. The orientation disorder of side radical spins reduces the spin splitting of molecular energy levels, which increases the threshold voltage of the device. The current and its spin polarization are reduced apparently at a low bias when the strength of disorder is enhanced. We further simulate the effect of temperature on the spin polarized transport through the device by taking into account two kinds of disorders.
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Keywords:
- orangic spintronics /
- organic ferromagnet /
- spin polarized transport /
- spin filtering
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[2] Xiong Z H, Wu D, Vardeny Z V, Shi J 2004 Nature 427 821
[3] [4] [5] Xie S J, Ahn K H, Smith D L, Bishop A R, Saxena A 2003 Phys. Rev. B 67 125202
[6] Inoue K, Hayanizu T, Iwamura H, Hashizume D, Ohashi Y 1996 J. Am. Chem. Soc. 118 1803
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[13] [14] [15] Iwamura H, Sugawara T, Itoh K, Takui T 1985 Mol. Cryst. Liq. Cryst. 125 379
[16] Katuluvskii Y A, Magrupov M A, Muminov A A 1991 Phys. Stat. Sol. A 127 223
[17] [18] Ovchinnikov A A, Spector V N 1988 Synth. Met. 27 B615
[19] [20] Fang Z, Liu Z L, Yao K L 1994 Phys. Rev. B 49 3916
[21] [22] [23] Fang Z, Liu Z L, Yao K L, Li Z G 1995 Phys. Rev. B 51 1304
[24] Fang Z, Liu Z L, Yao K L, Li Z G 1994 Acta Phys. Sin. 43 1866 (in Chinese)[方 忠、刘祖黎、姚凯伦、李再光 1994 43 1866]
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[27] [28] Zhao J Q, Wei J H, Wang S G, Xie S J, Mei L M 1999 Acta Phys. Sin. 48 1163 (in Chinese)[赵俊卿、魏建华、王守国、解士杰、梅良模 1999 48 1163]
[29] [30] [31] Yoo J W, Edelstein R S, Lincoln D M 2006 Phys. Rev. Lett. 97 247205
[32] Sugawara T, Matsushita M M 2009 J. Mater. Chem. 19 1738
[33] [34] Wang W Z 2006 Phys. Rev. B 73 235325
[35] [36] Zhu L, Yao K L, Liu Z L 2010 Appl. Phys. Lett. 96 082115
[37] [38] Hu G C, Guo Y, Wei J H, Xie S J 2007 Phys. Rev. B 75 165321
[39] [40] [41] Hu G C, He K L, Xie S J, Saxena A 2008 J. Chem. Phys. 129 234708
[42] [43] Datta S 1995 Electronic Transport in Mesoscopic Systems (New York: Oxford University Press) p148
[44] [45] Ferry D, Goodnick S M 1997 Transport in Nanostructures (Cambridge: Cambridge University Press) p169
[46] Wang L X, Liu D S, Wei J H, Xie S J, Han S H, Mei L M 2002 J. Chem. Phys. 116 9606
[47] [48] [49] Gao X T, Fu X, Song J, Liu D S, Xie S J 2006 Acta Phys. Sin. 55 952 (in Chinese)[高绪团、傅 雪、宋 骏、刘德胜、解士杰 2006 55 952]
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[1] Dediu V, Murgia M, Matacotta F C, Taliani C, Barbanera S 2002 Solid State Commun. 122 181
[2] Xiong Z H, Wu D, Vardeny Z V, Shi J 2004 Nature 427 821
[3] [4] [5] Xie S J, Ahn K H, Smith D L, Bishop A R, Saxena A 2003 Phys. Rev. B 67 125202
[6] Inoue K, Hayanizu T, Iwamura H, Hashizume D, Ohashi Y 1996 J. Am. Chem. Soc. 118 1803
[7] [8] Epstein A J, Miller J S 1996 Synth. Met. 80 231
[9] [10] [11] Korshak Y V, Medvedeva T V, Ovchinnikov A A, Spector V N 1987 Nature 326 370
[12] Cao Y, Wang P, Hu Z Y, Li S Z, Zhang L Y, Zhao J G 1988 Synth. Met. 27 B625
[13] [14] [15] Iwamura H, Sugawara T, Itoh K, Takui T 1985 Mol. Cryst. Liq. Cryst. 125 379
[16] Katuluvskii Y A, Magrupov M A, Muminov A A 1991 Phys. Stat. Sol. A 127 223
[17] [18] Ovchinnikov A A, Spector V N 1988 Synth. Met. 27 B615
[19] [20] Fang Z, Liu Z L, Yao K L 1994 Phys. Rev. B 49 3916
[21] [22] [23] Fang Z, Liu Z L, Yao K L, Li Z G 1995 Phys. Rev. B 51 1304
[24] Fang Z, Liu Z L, Yao K L, Li Z G 1994 Acta Phys. Sin. 43 1866 (in Chinese)[方 忠、刘祖黎、姚凯伦、李再光 1994 43 1866]
[25] [26] Xie S J, Zhao J Q, Wei J H, Wang S G, Mei L M, Han S H 2000 Europhys. Lett. 50 635
[27] [28] Zhao J Q, Wei J H, Wang S G, Xie S J, Mei L M 1999 Acta Phys. Sin. 48 1163 (in Chinese)[赵俊卿、魏建华、王守国、解士杰、梅良模 1999 48 1163]
[29] [30] [31] Yoo J W, Edelstein R S, Lincoln D M 2006 Phys. Rev. Lett. 97 247205
[32] Sugawara T, Matsushita M M 2009 J. Mater. Chem. 19 1738
[33] [34] Wang W Z 2006 Phys. Rev. B 73 235325
[35] [36] Zhu L, Yao K L, Liu Z L 2010 Appl. Phys. Lett. 96 082115
[37] [38] Hu G C, Guo Y, Wei J H, Xie S J 2007 Phys. Rev. B 75 165321
[39] [40] [41] Hu G C, He K L, Xie S J, Saxena A 2008 J. Chem. Phys. 129 234708
[42] [43] Datta S 1995 Electronic Transport in Mesoscopic Systems (New York: Oxford University Press) p148
[44] [45] Ferry D, Goodnick S M 1997 Transport in Nanostructures (Cambridge: Cambridge University Press) p169
[46] Wang L X, Liu D S, Wei J H, Xie S J, Han S H, Mei L M 2002 J. Chem. Phys. 116 9606
[47] [48] [49] Gao X T, Fu X, Song J, Liu D S, Xie S J 2006 Acta Phys. Sin. 55 952 (in Chinese)[高绪团、傅 雪、宋 骏、刘德胜、解士杰 2006 55 952]
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