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Based on the spin diffusion theory and the Ohm’s law, we theoretically studied the magnetoresistance (MR) effect in an organic spin valve with structure of ferromagnetic/organic semiconductor/ferromagnetic system, which takes into account the special characteristics of organic semiconductors. Self-trapped states, such as spin polarons as well as spinless bipolarons are assumed to be the main carriers in organic semiconductors. From the calculation, it is found that MR ratio increases with the increasing of the polaron proportion and rapidly decreases with the increasing of the organic layer thickness. MR ratio can be enhanced remarkably when the interfacial resistances are spin related. Effects of the conductivity match and the spin polarization of the ferromagnetic layer on the MR are also discussed.
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Keywords:
- magnetoresistance /
- organic spintronics /
- polarons
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[2] Zutic I, Fabian J, Sarma S D 2004 Rev. Mod. Phys. 76 323
[3] Naber W J M, Faez S, Gvan der Wie W 2007 J. Phys. D: Appl. Phys. 40 R205
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[10] Wang T X, Wei H X, Zeng Z M, Han X F, Hong Z M, Shi G Q 2006 Appl. Phys. Lett. 88 242505
[11] Pang Z Y, Chen Y X, Liu T T, Zhang Y P, Xie S J, Yan S S, Han S H 2006 Chin. Phys. Lett. 23 1566
[12] Sheng Y, Nguyen T D, Veeraraghavan G, Mermer O, Wohlgenannt M 2007 Phys. Rev. B 75 035202
[13] Bobbert P A, Nguyen T D, van Oost F W A, Koopmans B, Wohlgenannt M 2007 Phys. Rev. Lett. 99 216801
[14] Bergeson J D, Prigodin V N, Lincoln D M, Epstein A J 2008 Phys. Rev. Lett. 100 067201
[15] Ren J F, Fu J Y, Liu D S, Mei L M, Xie S J 2005 J. Appl. Phys. 98 074503
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[17] Ren J F, Zhang Y B, Xie S J 2008 Org. Electron. 9 1017
[18] Zhang Y B, Ren J F, Xie S J 2008 Org. Electron. 9 687
[19] Zhang Y B, Ren J F, Lei J, Xie S J 2009 Org. Electron. 10 568
[20] Mi Y L, Zhang M, Yan H 2008 Phys. Lett. A 372 6434
[21] Zhao J Q, Qiao S Z, Zhang N Y, Xu F Y, Pang Y T, Chen Y 2009 Curr. Appl. Phys. 9 919
-
[1] Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnár S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488
[2] Zutic I, Fabian J, Sarma S D 2004 Rev. Mod. Phys. 76 323
[3] Naber W J M, Faez S, Gvan der Wie W 2007 J. Phys. D: Appl. Phys. 40 R205
[4] Xiong Z H, Wu D, Vardeny Z V, Shi J 2004 Nature 427 821
[5] Santos T S, Lee J S, Migdal P, Lekshmi I C, Satpati B, Moodera J S 2007 Phys. Rev. Lett. 98 016601
[6] Bloom F L, Wagemans W, Kemerink M, Koopmans B 2007 Phys. Rev. Lett. 99 257201
[7] Majumdar S, Huhtinen H, Majumdar H S, Laiho R, Osterbacka R 2008 J. Appl. Phys. 104 033910
[8] Dediu V, Hueso L E, Bergenti I, Riminucci A, Borgatti F, Graziosi P, Newby C, Casoli F, De Jong M P, Taliani C, Zhan Y 2008 Phys. Rev. B 78 115203
[9] Drew A J, Hoppler J, Schulz L, Pratt F L, Desai P, Shakya P, Kreouzis T, Gillin W P, Suter A, Morley N A, Malik1 V K, Dubroka A, Kim K W, Bouyanfif H, Bourqui F, Bernhard C, Scheuermann R, Nieuwenhuys G J, Prokscha T, Morenzoni E 2009 Nature Mater. 8 109
[10] Wang T X, Wei H X, Zeng Z M, Han X F, Hong Z M, Shi G Q 2006 Appl. Phys. Lett. 88 242505
[11] Pang Z Y, Chen Y X, Liu T T, Zhang Y P, Xie S J, Yan S S, Han S H 2006 Chin. Phys. Lett. 23 1566
[12] Sheng Y, Nguyen T D, Veeraraghavan G, Mermer O, Wohlgenannt M 2007 Phys. Rev. B 75 035202
[13] Bobbert P A, Nguyen T D, van Oost F W A, Koopmans B, Wohlgenannt M 2007 Phys. Rev. Lett. 99 216801
[14] Bergeson J D, Prigodin V N, Lincoln D M, Epstein A J 2008 Phys. Rev. Lett. 100 067201
[15] Ren J F, Fu J Y, Liu D S, Mei L M, Xie S J 2005 J. Appl. Phys. 98 074503
[16] Ren J F, Zhang Y B, Xie S J 2007 Acta Phys. Sin. 56 4785 (in Chinese) [任俊峰、张玉滨、解士杰2007 56 4785]
[17] Ren J F, Zhang Y B, Xie S J 2008 Org. Electron. 9 1017
[18] Zhang Y B, Ren J F, Xie S J 2008 Org. Electron. 9 687
[19] Zhang Y B, Ren J F, Lei J, Xie S J 2009 Org. Electron. 10 568
[20] Mi Y L, Zhang M, Yan H 2008 Phys. Lett. A 372 6434
[21] Zhao J Q, Qiao S Z, Zhang N Y, Xu F Y, Pang Y T, Chen Y 2009 Curr. Appl. Phys. 9 919
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