参数修改对铁电薄膜相变性质的影响

卢兆信

doi:10.7498/aps.62.116802

摘要

在关联有效场理论的框架内, 利用微分算子技术, 详细地计算了基于横场伊辛模型描述的对称铁电薄膜系统的相变性质. 根据薄膜各层自旋平均值构成的一系列耦合方程, 推导出可以用来计算任意层的具有不同表面层的薄膜相图的解析通式方程, 讨论了参数修改对薄膜相互作用参数从FPD (铁电相占主导地位的相图)到PPD (顺电相占主导地位的相图)过渡值和参数空间中各相变区域的影响. 在与平均场近似进行比较的结果显示, 关联有效场理论所得到的铁电薄膜的铁电性在某种程度上比平均场近似下的结果减弱.

关键词:

Abstract

Within the framework of effective-field theory with correlations, phase transition properties of ferroelectric thin films with different symmetrical surfaces described by the spin-1/2 transverse field Ising model are studied systematically by the differential operator technique. According to the coupling equations with the layer polarization average, the analytical general equations for phase diagrams of multiple-surface ferroelectric thin films with different surface layers have been derived. Then, effects of various parameter modifications on the crossover values from the FPD (ferroelectric-dominant phase diagram) to the PPD (paraelectric-dominant phase diagram) and phase transition regions in the parameter space are discussed in detail. In comparison with the mean-field approximation, the results indicate that the effective-field theory with correlations maybe reduce the ferroelectricity of the ferroelectric thin films more exaggeratedly than the mean-field approximation to some extent.

Keywords:

作者及机构信息

卢兆信

1.
临沂大学机械工程学院, 临沂 276005

基金项目: 国家自然科学基金(批准号: 11247208和11205079)资助的课题.

Authors and contacts

Lu Zhao-Xin

1.
College of Mechanical Engineering, Linyi University, Linyi 276005, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11247208, 11205079).

参考文献

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[2]	Damjanovic D 1998 Rep. Prog. Phys. 61 1267
[3]	Dawber M, Rabe K M, Scott J F 2005 Rev. Mod. Phys. 77 1083
[4]	Zhong W L, Wang Y G, Zhang P L, Qu B D 1994 Phys. Rev. B 50 698
[5]	Lu T Q, Cao W W 2002 Phys. Rev. B 66 24102
[6]	Lin S, Lu T Q, Cao W W 2006 Phys. Stat. Sol. (b) 243 2952
[7]	Sun P N, Cui L, Lu T Q 2009 Chin. Phys. B 18 1658
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[10]	Wang C L, Zhong W L, Zhang P L 1992 J. Phys.: Condens. Matter 4 4743
[11]	Wang C L, Smith S R P, Tilley D R 1994 J. Phys.: Condens. Matter 6 9633
[12]	Sy H K 1993 J. Phys.: Condens. Matter 5 1213
[13]	Wang X G, Pan S H, Yang G Z 1999 J. Phys.: Condens. Matter 11 6581
[14]	Tao Y M, Jiang Q, Cao H X 2005 Acta Phys. Sin. 54 0274 (in Chinese) [陶永梅, 蒋青, 曹海霞 2005 54 0274]
[15]	Sun P N, Lu T Q, Chen H, Cao W W 2008 Chin. Phys. Lett. 25 3422
[16]	Chen H, Lu T Q, Cui L, Cao W W 2008 Physica A 387 1963
[17]	Zhou J, Lu T Q, Xie W G, Cao W W 2009 Chin. Phys. B 18 3054
[18]	Cui L, Lu T Q, Sun P N, Xue H J 2010 Chin. Phys. B 19 077701
[19]	Cui L, Xu Q, Han Z Y, Xu X 2012 Chin. Phys. Lett. 29 037701
[20]	Teng B H, Sy H K 2004 Physica B 348 485
[21]	Lu Z X, Teng B H, Lu X H, Zhang X J, Wang C D 2009 Solid State Commun. 149 1176
[22]	Lu Z X 2013 Phys. Scr. 87 025002
[23]	Lu Z X 2012 Physica A (submitted)
[24]	Wei G Z, Liu J, Miao H L, Du A 2007 Phys. Rev. B 76 054402
[25]	Teng B H, Sy H K 2004 Phys. Rev. B 70 104115
[26]	Lu Z X, Teng B H, Yang X, Rong Y H, Zhang H W 2010 Chin. Phys. B 19 127701
[27]	Kaneyoshi T 1993 Acta Phys. Pol. A 83 703
[28]	Kaneyoshi T 2003 Physica A 319 355
[29]	Jiang W, Lo V C 2008 Physica A 387 6778
[30]	Arhchoui H, El Amraoui Y, Mezzane D, Luk'yanchuk I 2009 Eur. Phys. J. Appl. Phys. 48 10503
[31]	Lu Z X, Teng B H, Rong Y H, Lu X H, Yang X 2010 Phys. Scr. 81 035004

施引文献

[1]	Scott J F 2007 Science 315 954
[2]	Damjanovic D 1998 Rep. Prog. Phys. 61 1267
[3]	Dawber M, Rabe K M, Scott J F 2005 Rev. Mod. Phys. 77 1083
[4]	Zhong W L, Wang Y G, Zhang P L, Qu B D 1994 Phys. Rev. B 50 698
[5]	Lu T Q, Cao W W 2002 Phys. Rev. B 66 24102
[6]	Lin S, Lu T Q, Cao W W 2006 Phys. Stat. Sol. (b) 243 2952
[7]	Sun P N, Cui L, Lu T Q 2009 Chin. Phys. B 18 1658
[8]	Zhou Z D, Zhang C Z, Zhang Y 2010 Acta Phys. Sin. 59 6620 (in Chinese) [周志东, 张春祖, 张颖 2010 59 6620]
[9]	L Y G, Liang X L, Gong Y Q, Zheng X J, Liu Z Z 2010 Acta Phys. Sin. 59 8167 (in Chinese) [吕业刚, 梁晓琳, 龚跃球, 郑学军, 刘志壮 2010 59 8167]
[10]	Wang C L, Zhong W L, Zhang P L 1992 J. Phys.: Condens. Matter 4 4743
[11]	Wang C L, Smith S R P, Tilley D R 1994 J. Phys.: Condens. Matter 6 9633
[12]	Sy H K 1993 J. Phys.: Condens. Matter 5 1213
[13]	Wang X G, Pan S H, Yang G Z 1999 J. Phys.: Condens. Matter 11 6581
[14]	Tao Y M, Jiang Q, Cao H X 2005 Acta Phys. Sin. 54 0274 (in Chinese) [陶永梅, 蒋青, 曹海霞 2005 54 0274]
[15]	Sun P N, Lu T Q, Chen H, Cao W W 2008 Chin. Phys. Lett. 25 3422
[16]	Chen H, Lu T Q, Cui L, Cao W W 2008 Physica A 387 1963
[17]	Zhou J, Lu T Q, Xie W G, Cao W W 2009 Chin. Phys. B 18 3054
[18]	Cui L, Lu T Q, Sun P N, Xue H J 2010 Chin. Phys. B 19 077701
[19]	Cui L, Xu Q, Han Z Y, Xu X 2012 Chin. Phys. Lett. 29 037701
[20]	Teng B H, Sy H K 2004 Physica B 348 485
[21]	Lu Z X, Teng B H, Lu X H, Zhang X J, Wang C D 2009 Solid State Commun. 149 1176
[22]	Lu Z X 2013 Phys. Scr. 87 025002
[23]	Lu Z X 2012 Physica A (submitted)
[24]	Wei G Z, Liu J, Miao H L, Du A 2007 Phys. Rev. B 76 054402
[25]	Teng B H, Sy H K 2004 Phys. Rev. B 70 104115
[26]	Lu Z X, Teng B H, Yang X, Rong Y H, Zhang H W 2010 Chin. Phys. B 19 127701
[27]	Kaneyoshi T 1993 Acta Phys. Pol. A 83 703
[28]	Kaneyoshi T 2003 Physica A 319 355
[29]	Jiang W, Lo V C 2008 Physica A 387 6778
[30]	Arhchoui H, El Amraoui Y, Mezzane D, Luk'yanchuk I 2009 Eur. Phys. J. Appl. Phys. 48 10503
[31]	Lu Z X, Teng B H, Rong Y H, Lu X H, Yang X 2010 Phys. Scr. 81 035004

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