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Pb(Zr0.3Ti0.7)O3(PZT)thin films have been grown by pulsed laser deposition (PLD) on LaSrAlTaO3 (LSATO),LaAlO3(LAO) and SrTiO3(STO) single crystal vicinal cut substrates. Laser-induced voltage(LIV) effect was also found in PZT thin films grown on the three vicinal cut substrates for the first time. LIV signals increased with the single-pulse laser energy following the linear relation in case of c-axis orientation of thin film; but this linear relation was not followed obviously in case of a-axis orientation of thin film. This result shows that the LIV effect in PZT thin film is the atomic layer thermopile effect, in the which anisotropy of Seebeck coefficient plays an important role. Through realizing impedance-matching of thin films and transmission line, LITV signal response time has been optimized, the time of rising edge dropped from 60 ns to 26 ns, the full width at half maximum dropped from 260 ns to 38 ns.
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Keywords:
- laser-induced voltage effect /
- ferroelectric thin films /
- orientation of thin film growth /
- atomic layer thermopile
[1] Chang C L, Kleinhammes A, Moulton W G, Testardi L R 1999 Phys. Rev. B 41 11564
[2] Phys. Sin. 55 4226 (in Chinese)[谈松林、 张 辉、 崔文东、 袁 圆、 张鹏翔 2006 55 4226]
[3] Tate K L, Johnson R D, Chang C L, Hilinski E F, Foster S C 1990 Appl. Phys. Lett. 67 4375
[4] Zahner T, Stierstorfer R, Reindl S, Schauer T, Penzkofer A, Lengfellner 1999 Phys. C 313 37
[5] Habermeier H U, Li X H, Zhang P X, Leibold B 1999 Solid State Commun. 110 473
[6] Li X H, Habermeier H U, Zhang P X 2000 Magn. Magn. Mater. 211 232
[7] Cui W D, Zhang H, Zhang G Y, Hu J T, Dai Y N, Zhang P X 2007 Chin. J. Lasers. 34 130 (in Chinese)[崔文东、 张 辉、 张国勇、 胡俊涛、 戴永年、 张鹏翔 2007 中国激光 34 130]
[8] Tan S L, Zhang H, Cui W D,Yuan Y, Zhang P X 2006 Acta.
[9] Gu M M, Zhang P X, Li G Z 2000 Acta. Phys. Sin. 49 1573 (in Chinese)[顾梅梅、 张鹏翔、 李国祯 2000 49 1573]
[10] Zhang P X, Wen X M, Gu M M, Zhang G Y 2002 Chin. J. Lasers. A29 205 (in Chinese)[张鹏翔、文小明、顾梅梅、张国勇 2002 中国激光 205] 〖10] Zhang P X, Lee W K, Zhang G Y 2002 Appl. Phys. Lett. 81 4026
[11] Huang Y H, Lv H B, He M, Zhao K 2005 Sci. In China. 35 109 (in Chinese)[黄延红、 吕惠宾、 何 萌、 赵 昆 2005 中国科学 35 109]
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[1] Chang C L, Kleinhammes A, Moulton W G, Testardi L R 1999 Phys. Rev. B 41 11564
[2] Phys. Sin. 55 4226 (in Chinese)[谈松林、 张 辉、 崔文东、 袁 圆、 张鹏翔 2006 55 4226]
[3] Tate K L, Johnson R D, Chang C L, Hilinski E F, Foster S C 1990 Appl. Phys. Lett. 67 4375
[4] Zahner T, Stierstorfer R, Reindl S, Schauer T, Penzkofer A, Lengfellner 1999 Phys. C 313 37
[5] Habermeier H U, Li X H, Zhang P X, Leibold B 1999 Solid State Commun. 110 473
[6] Li X H, Habermeier H U, Zhang P X 2000 Magn. Magn. Mater. 211 232
[7] Cui W D, Zhang H, Zhang G Y, Hu J T, Dai Y N, Zhang P X 2007 Chin. J. Lasers. 34 130 (in Chinese)[崔文东、 张 辉、 张国勇、 胡俊涛、 戴永年、 张鹏翔 2007 中国激光 34 130]
[8] Tan S L, Zhang H, Cui W D,Yuan Y, Zhang P X 2006 Acta.
[9] Gu M M, Zhang P X, Li G Z 2000 Acta. Phys. Sin. 49 1573 (in Chinese)[顾梅梅、 张鹏翔、 李国祯 2000 49 1573]
[10] Zhang P X, Wen X M, Gu M M, Zhang G Y 2002 Chin. J. Lasers. A29 205 (in Chinese)[张鹏翔、文小明、顾梅梅、张国勇 2002 中国激光 205] 〖10] Zhang P X, Lee W K, Zhang G Y 2002 Appl. Phys. Lett. 81 4026
[11] Huang Y H, Lv H B, He M, Zhao K 2005 Sci. In China. 35 109 (in Chinese)[黄延红、 吕惠宾、 何 萌、 赵 昆 2005 中国科学 35 109]
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