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This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity with InAs quantum dots (QDs) emitters and analyzes the optical characteristics of cavity modes at room temperature. The micro-luminescence spectrum recorded from the nanocavities exhibits a narrow optical transition at the lowest order resonance wavelength of about 1137 nm with about 1 nm emission linewidth. In addition,the spectra of photonic crystal nanocavities processed under different etching conditions show that the verticality of air hole sidewall is an important factor determing the luminescence characteristics of photonic crystal nanocaivties. Finally,the variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed at improving the probability of achieving spectral coupling of a single QD to a cavity mode.
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Keywords:
- photonic crystal nanocavity /
- GaAs /
- quantum dot /
- resonant cavity modes
[1] Yablonovitch E 1987 Phys. Rev. Lett. 58 2059
[2] Ishida S, Arakawa Y 2006 Opt. Express 14 6308
[3] 2004 New J. Phys. 6 89
[4] John S 1987 Phys. Rev. Lett. 58 2486
[5] Sugimoto Y, Tanaka Y, Ikeda N, Nakamura Y, Asakawa K, Inoue K 2004 Opt. Express 12 1090
[6] Lin S Y, Chow E, Bur J, Johnson S G, Joannopoulos J D 2002 Opt. Lett. 27 1400
[7] Noda S, Chutlnan A, Imada M 2000 Nature 407 608
[8] Painter O, Lee R K, Scherer A, Yariv A, OBrien J D, Dapkus P D, Kim Ⅰ 1999 Science 284 1819
[9] Nomura M, Iwamoto S, Watanabe K, Kumagai N, Nakata Y,
[10] Asano T, Kunishi W, Song B S, Noda S 2006 Appl. Phys. Lett. 88 151102
[11] Ji L L, Chen W, Cao Y C, Yang Z Y, Lu P X 2009 Acta Phys. Sin. 58 5462 (in Chinese) [季玲玲、 陈 伟、 曹迎春、 杨振宇、 陆培祥 2009 58 5462]
[12] Liu H Y, Meng Z M, Dai Q F, Wu L J, Lan S, Liu S H 2009 Acta Phys. Sin. 58 4702 (in Chinese) [刘海英、 蒙自明、 戴峭峰、 吴立军、 兰 胜、 刘颂豪 2009 58 4702]
[13] Santori C, Fattal D, Vuckovic J, Solomon G S, Yamamoto Y
[14] Chang W H, Chen W Y, Chang W Y, Hsieh H S, Chyi J I, Hsu T M 2006 Phys. Rev. Lett. 96 117401
[15] Kiraz A, Atature M, Imamoglu I 2004 Phys. Rev. A 69 032305
[16] Baba T 1997 IEEE J. Sel. Top. Quant. 3 808
[17] Coldren L A, Corzine S W 1995 Diode Lasers and Photonic Integrated Circuits (New York: Wiley) p88
[18] Baba T, Matsuzaki T 1996 Jpn. J. Appl. Phys. 35 1348
[19] Zou Y, Osinski J S, Grodzinski P, Dapkus P D, Rideout W, Sharfim W F, Crawford F D 1992 IEEE Photon. Technol. Lett. 4 1315
[20] Arakawa Y, Sakaki H 1982 Appl. Phys. Lett. 40 939
[21] Englund D, Fattal D, Waks E, Solomon G S, Zhang B, Nakaoka T, Arakawa Y, Yamamoto Y, Vu kovic ' J 2005 Phys. Rev. Lett. 95 013904
[22] Nomura M, Lwamoto S, Yang T, Lshida S, Arakawa Y 2006 Appl. Phys. Lett. 89 241124
[23] Chalcraft A R A, Lam S, OBrien D, Krauss T F, Sahin M, Szymanski D, Sanvitto D, Oulton R, Skolnick M S, Fox A M, Whittaker D M, Liu H Y, Hopkinson M 2007 Appl. Phys. Lett. 90 241117
[24] Asano T, Song B S, Noda S 2006 Opt. Express 14 1996
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[1] Yablonovitch E 1987 Phys. Rev. Lett. 58 2059
[2] Ishida S, Arakawa Y 2006 Opt. Express 14 6308
[3] 2004 New J. Phys. 6 89
[4] John S 1987 Phys. Rev. Lett. 58 2486
[5] Sugimoto Y, Tanaka Y, Ikeda N, Nakamura Y, Asakawa K, Inoue K 2004 Opt. Express 12 1090
[6] Lin S Y, Chow E, Bur J, Johnson S G, Joannopoulos J D 2002 Opt. Lett. 27 1400
[7] Noda S, Chutlnan A, Imada M 2000 Nature 407 608
[8] Painter O, Lee R K, Scherer A, Yariv A, OBrien J D, Dapkus P D, Kim Ⅰ 1999 Science 284 1819
[9] Nomura M, Iwamoto S, Watanabe K, Kumagai N, Nakata Y,
[10] Asano T, Kunishi W, Song B S, Noda S 2006 Appl. Phys. Lett. 88 151102
[11] Ji L L, Chen W, Cao Y C, Yang Z Y, Lu P X 2009 Acta Phys. Sin. 58 5462 (in Chinese) [季玲玲、 陈 伟、 曹迎春、 杨振宇、 陆培祥 2009 58 5462]
[12] Liu H Y, Meng Z M, Dai Q F, Wu L J, Lan S, Liu S H 2009 Acta Phys. Sin. 58 4702 (in Chinese) [刘海英、 蒙自明、 戴峭峰、 吴立军、 兰 胜、 刘颂豪 2009 58 4702]
[13] Santori C, Fattal D, Vuckovic J, Solomon G S, Yamamoto Y
[14] Chang W H, Chen W Y, Chang W Y, Hsieh H S, Chyi J I, Hsu T M 2006 Phys. Rev. Lett. 96 117401
[15] Kiraz A, Atature M, Imamoglu I 2004 Phys. Rev. A 69 032305
[16] Baba T 1997 IEEE J. Sel. Top. Quant. 3 808
[17] Coldren L A, Corzine S W 1995 Diode Lasers and Photonic Integrated Circuits (New York: Wiley) p88
[18] Baba T, Matsuzaki T 1996 Jpn. J. Appl. Phys. 35 1348
[19] Zou Y, Osinski J S, Grodzinski P, Dapkus P D, Rideout W, Sharfim W F, Crawford F D 1992 IEEE Photon. Technol. Lett. 4 1315
[20] Arakawa Y, Sakaki H 1982 Appl. Phys. Lett. 40 939
[21] Englund D, Fattal D, Waks E, Solomon G S, Zhang B, Nakaoka T, Arakawa Y, Yamamoto Y, Vu kovic ' J 2005 Phys. Rev. Lett. 95 013904
[22] Nomura M, Lwamoto S, Yang T, Lshida S, Arakawa Y 2006 Appl. Phys. Lett. 89 241124
[23] Chalcraft A R A, Lam S, OBrien D, Krauss T F, Sahin M, Szymanski D, Sanvitto D, Oulton R, Skolnick M S, Fox A M, Whittaker D M, Liu H Y, Hopkinson M 2007 Appl. Phys. Lett. 90 241117
[24] Asano T, Song B S, Noda S 2006 Opt. Express 14 1996
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