图形衬底量子线生长制备与荧光特性研究

王秀平; 杨晓红; 韩勤; 鞠研玲; 杜云; 朱彬; 王杰; 倪海桥; 贺继方; 王国伟; 牛智川

doi:10.7498/aps.60.020703

摘要

报道了在V型槽图形衬底上利用分子束外延技术外延生长的GaAs/AlGaAs量子线.外延截面在扫描电子显微镜下可以看到在V型槽底部形成了弯月型量子线结构,量子线尺寸约为底边60 nm高14 nm的近三角形.低温87 K下光致发光谱测试在793.7和799.5 nm处出现峰值,验证了量子线的存在.理论近似计算结果显示,相比等宽度量子阱有8 meV的蓝移正是由于横向量子限制引起的.

关键词:

V型槽图形衬底 /
量子线 /
GaAs

GaAs/AlGaAs quantum wires grown by molecular beam epitaxy on a V-groove patterned substrate was described. The cross section of scan electron microscopy (SEM) image shows that crescent-type quantum wire were formed at the V groove bottom, which is a triangle of about 60nm in width and 14nm in height. Two peaks at 793.7nm and 799.5nm of photoluminescence spectrum at 87K verified the existence of quantum wires. Theoretical calculation gives 8meV blue shift, which is proved to be casued by lateral confinement compared with quantum well of the same width.

Keywords:

作者及机构信息

(1)中国科学院半导体研究所半导体超晶格国家重点实验室,北京 100083; (2)中国科学院半导体研究所集成光电子学国家重点实验室,北京 100083

基金项目: 国家重点基础研究发展计划(批准号:2007CB936304,2006CB302802)、国家高技术研究发展计划(批准号:2007AA03Z421,2009AA03Z404)和国家自然科学基金(批准号:60876093)资助的课题.

Authors and contacts

(1)State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 China; (2)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

参考文献

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施引文献

[1]	Song Y X, Zheng W M,Liu J, Chu N N, Li S M 2009 Acta Phys. Sin. 58 6471 (in Chinese) [宋迎新、郑卫民、刘静、初宁宁、李素梅 2009 58 6471]
[2]	Auslaender O M, Yacoby A 2002 Science 295 825
[3]	Wang X L, Voliotis V 2006 J. Appl. Phys. 99 121301
[4]	Yan R X, Gargas D, Yang P D 2009 Nature Photonics 3 569
[5]	Divochiy A, Marsili F, Bitauld D 2008 Nature Photonics 2 302
[6]	Pekola J P, Vartiainen J J 2008 Nature Physics 4 120
[7]	Xia Y, Yang P, Sun Y, Wu Y, Mayers B, Gates B, Yin Y, Kim F, Yan H 2003 Advanced Materials 15 353
[8]	Li H, Guo H Z,Lu C, Li L, Gao J 2008 Acta Phys. Sin. 57 5863 (in Chinese) [李宏、郭华忠、路川、李玲、高洁 2008 57 5863]
[9]	Kapon E, Hwang D M, Bhat R 1989 Phys. Rev. Lett. 63 430
[10]	Rinaldi R, Cingolani R 1994 Phys. Rev. Lett. 73 2899
[11]	Vouilloz F, Oberli D Y, Dupertuis M A, Gustafsson A, Reinhardt F, Kapon E 1997 Phys. Rev. Lett. 78 1580
[12]	Wang X L, Ogura M, Matsuhata H 1995 Appl. Phys. Lett. 67 3629
[13]	Wang X L, Voliotis V, Matsuhata H 1995 Appl. Phys. Lett. 66 1506
[14]	Wang X L, Ogura M, Matsuhata H 1997 J. Cryst. Growth 171 341
[15]	Wang X L, Voliotis V 2000 J. Cryst. Growth 221 556
[16]	Cheng W Q, Cai L H, Chen H, Zhou J M, Xie X G, Mei X B, Zhao T N, Zhu G 1995 Acta Phys. Sin. 44 1429 (in Chinese) [程文芹、蔡丽红、陈弘、周均铭、谢小刚、梅笑冰、赵铁男、朱恪 1995 44 142]
[17]	Shen X Q, Tanaka M 1994 J. Cryst. Growth 135 85
[18]	Sugaya T, Nakagawa T, Sugiyama Y 1998 J. Cryst. Growth 186 27
[19]	Liu G S, Liu S, Wang W X, Zhao H M, Liu B L, Jiang Z W, Gao H C, Wang J, Huang Q A, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 3355 (in Chinese) [刘桂生、刘肃、王文新、〖20] Gao H L, Zeng Y P 2008 Chin. Phys. B 17 1119
[20]	Hersee S D, Barbier E, Blondeau R 1986 J. Cryst. Growth 77 310
[21]	Haider N, Wilby M R, Vvedensky D D 1993 Appl. Phys. Lett. 62 3108
[22]	Jia W Y, Lu Z D,Huang Y, Zhou J M, Li Y K, Wang Y Y 1988 Acta Phys. Sin. 37 6 (in Chinese) [贾惟义、鲁志东、黄绮、周均铭、李永康、王彦云 1988 37 6]
[23]	Li Z F, Lu W, Liu X Q, Shen X C, Fu Y, Willander M, Tan H H, Jagadish C 2000 Acta Phys. Sin. 49 1809 (in Chinese) [李志锋、陆卫、刘兴权、沈学础、 Fu Y, Willander M, Tan H H, Jagadish C 2000 49 1809]
[24]	Jin S R, Xu Z Y 1994 Acta Phys. Sin. 43 384 (in Chinese) [金世荣、徐仲英 1994 43 384]
[25]	Niu Z C, Zhou Z Q, Lin Y W, Li X F, Zhang Y, Hu X W, Lü Z D, Xu Z Y 1997 Acta Phys. Sin. 46 969 (in Chinese) [牛智川、周增圻、林耀望、李新峰、张益、胡雄伟、吕振东、徐仲英1997 46 969]
[26]	Casey H C 1978 Heterostructure Lasers Part A: Fundamental Principle (New York: Academic Press) p188
[27]	Shu Q, Shu Y C, Zhang G J, Liu R B, Yao J H, Pi B, Xing X D, Lin Y W, Xu J J, Wang Z G 2006 Acta Phys. Sin. 55 1379 (in Chinese) [舒强、舒永春、张冠杰、刘如彬、姚江宏、皮彪、邢晓东、林耀望、许京军、王占国 2006 55 1379]
[28]	Adachi S 1994 GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties (Singapore:World Scientific Press) p151
[29]	Adachi S 1994 GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties (Singapore: World Scientific Press) p254

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