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GaAs/AlGaAs quantum wires grown by molecular beam epitaxy on a V-groove patterned substrate was described. The cross section of scan electron microscopy (SEM) image shows that crescent-type quantum wire were formed at the V groove bottom, which is a triangle of about 60nm in width and 14nm in height. Two peaks at 793.7nm and 799.5nm of photoluminescence spectrum at 87K verified the existence of quantum wires. Theoretical calculation gives 8meV blue shift, which is proved to be casued by lateral confinement compared with quantum well of the same width.
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Keywords:
- V-groove substrate /
- quantum wires /
- GaAs
[1] Song Y X, Zheng W M,Liu J, Chu N N, Li S M 2009 Acta Phys. Sin. 58 6471 (in Chinese) [宋迎新、 郑卫民、 刘 静、 初宁宁、 李素梅 2009 58 6471]
[2] Auslaender O M, Yacoby A 2002 Science 295 825
[3] Wang X L, Voliotis V 2006 J. Appl. Phys. 99 121301
[4] Yan R X, Gargas D, Yang P D 2009 Nature Photonics 3 569
[5] Divochiy A, Marsili F, Bitauld D 2008 Nature Photonics 2 302
[6] Pekola J P, Vartiainen J J 2008 Nature Physics 4 120
[7] Xia Y, Yang P, Sun Y, Wu Y, Mayers B, Gates B, Yin Y, Kim F, Yan H 2003 Advanced Materials 15 353
[8] Li H, Guo H Z,Lu C, Li L, Gao J 2008 Acta Phys. Sin. 57 5863 (in Chinese) [李 宏、 郭华忠、 路 川、 李 玲 、 高 洁 2008 57 5863]
[9] Kapon E, Hwang D M, Bhat R 1989 Phys. Rev. Lett. 63 430
[10] Rinaldi R, Cingolani R 1994 Phys. Rev. Lett. 73 2899
[11] Vouilloz F, Oberli D Y, Dupertuis M A, Gustafsson A, Reinhardt F, Kapon E 1997 Phys. Rev. Lett. 78 1580
[12] Wang X L, Ogura M, Matsuhata H 1995 Appl. Phys. Lett. 67 3629
[13] Wang X L, Voliotis V, Matsuhata H 1995 Appl. Phys. Lett. 66 1506
[14] Wang X L, Ogura M, Matsuhata H 1997 J. Cryst. Growth 171 341
[15] Wang X L, Voliotis V 2000 J. Cryst. Growth 221 556
[16] Cheng W Q, Cai L H, Chen H, Zhou J M, Xie X G, Mei X B, Zhao T N, Zhu G 1995 Acta Phys. Sin. 44 1429 (in Chinese) [程文芹、 蔡丽红、 陈 弘、 周均铭、 谢小刚、 梅笑冰、 赵铁男、 朱 恪 1995 44 142]
[17] Shen X Q, Tanaka M 1994 J. Cryst. Growth 135 85
[18] Sugaya T, Nakagawa T, Sugiyama Y 1998 J. Cryst. Growth 186 27
[19] Liu G S, Liu S, Wang W X, Zhao H M, Liu B L, Jiang Z W, Gao H C, Wang J, Huang Q A, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 3355 (in Chinese) [刘桂生、 刘 肃、 王文新、 〖20] Gao H L, Zeng Y P 2008 Chin. Phys. B 17 1119
[20] Hersee S D, Barbier E, Blondeau R 1986 J. Cryst. Growth 77 310
[21] Haider N, Wilby M R, Vvedensky D D 1993 Appl. Phys. Lett. 62 3108
[22] Jia W Y, Lu Z D,Huang Y, Zhou J M, Li Y K, Wang Y Y 1988 Acta Phys. Sin. 37 6 (in Chinese) [贾惟义、 鲁志东、 黄 绮、 周均铭、 李永康、 王彦云 1988 37 6]
[23] Li Z F, Lu W, Liu X Q, Shen X C, Fu Y, Willander M, Tan H H, Jagadish C 2000 Acta Phys. Sin. 49 1809 (in Chinese) [李志锋、 陆 卫、 刘兴权、 沈学础、 Fu Y, Willander M, Tan H H, Jagadish C 2000 49 1809]
[24] Jin S R, Xu Z Y 1994 Acta Phys. Sin. 43 384 (in Chinese) [金世荣、 徐仲英 1994 43 384]
[25] Niu Z C, Zhou Z Q, Lin Y W, Li X F, Zhang Y, Hu X W, Lü Z D, Xu Z Y 1997 Acta Phys. Sin. 46 969 (in Chinese) [牛智川、周增圻、林耀望、李新峰、张 益、胡雄伟、吕振东、徐仲英1997 46 969]
[26] Casey H C 1978 Heterostructure Lasers Part A: Fundamental Principle (New York: Academic Press) p188
[27] Shu Q, Shu Y C, Zhang G J, Liu R B, Yao J H, Pi B, Xing X D, Lin Y W, Xu J J, Wang Z G 2006 Acta Phys. Sin. 55 1379 (in Chinese) [舒 强、 舒永春、 张冠杰、 刘如彬、 姚江宏、 皮 彪、 邢晓东、 林耀望、 许京军、 王占国 2006 55 1379]
[28] Adachi S 1994 GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties (Singapore:World Scientific Press) p151
[29] Adachi S 1994 GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties (Singapore: World Scientific Press) p254
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[1] Song Y X, Zheng W M,Liu J, Chu N N, Li S M 2009 Acta Phys. Sin. 58 6471 (in Chinese) [宋迎新、 郑卫民、 刘 静、 初宁宁、 李素梅 2009 58 6471]
[2] Auslaender O M, Yacoby A 2002 Science 295 825
[3] Wang X L, Voliotis V 2006 J. Appl. Phys. 99 121301
[4] Yan R X, Gargas D, Yang P D 2009 Nature Photonics 3 569
[5] Divochiy A, Marsili F, Bitauld D 2008 Nature Photonics 2 302
[6] Pekola J P, Vartiainen J J 2008 Nature Physics 4 120
[7] Xia Y, Yang P, Sun Y, Wu Y, Mayers B, Gates B, Yin Y, Kim F, Yan H 2003 Advanced Materials 15 353
[8] Li H, Guo H Z,Lu C, Li L, Gao J 2008 Acta Phys. Sin. 57 5863 (in Chinese) [李 宏、 郭华忠、 路 川、 李 玲 、 高 洁 2008 57 5863]
[9] Kapon E, Hwang D M, Bhat R 1989 Phys. Rev. Lett. 63 430
[10] Rinaldi R, Cingolani R 1994 Phys. Rev. Lett. 73 2899
[11] Vouilloz F, Oberli D Y, Dupertuis M A, Gustafsson A, Reinhardt F, Kapon E 1997 Phys. Rev. Lett. 78 1580
[12] Wang X L, Ogura M, Matsuhata H 1995 Appl. Phys. Lett. 67 3629
[13] Wang X L, Voliotis V, Matsuhata H 1995 Appl. Phys. Lett. 66 1506
[14] Wang X L, Ogura M, Matsuhata H 1997 J. Cryst. Growth 171 341
[15] Wang X L, Voliotis V 2000 J. Cryst. Growth 221 556
[16] Cheng W Q, Cai L H, Chen H, Zhou J M, Xie X G, Mei X B, Zhao T N, Zhu G 1995 Acta Phys. Sin. 44 1429 (in Chinese) [程文芹、 蔡丽红、 陈 弘、 周均铭、 谢小刚、 梅笑冰、 赵铁男、 朱 恪 1995 44 142]
[17] Shen X Q, Tanaka M 1994 J. Cryst. Growth 135 85
[18] Sugaya T, Nakagawa T, Sugiyama Y 1998 J. Cryst. Growth 186 27
[19] Liu G S, Liu S, Wang W X, Zhao H M, Liu B L, Jiang Z W, Gao H C, Wang J, Huang Q A, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 3355 (in Chinese) [刘桂生、 刘 肃、 王文新、 〖20] Gao H L, Zeng Y P 2008 Chin. Phys. B 17 1119
[20] Hersee S D, Barbier E, Blondeau R 1986 J. Cryst. Growth 77 310
[21] Haider N, Wilby M R, Vvedensky D D 1993 Appl. Phys. Lett. 62 3108
[22] Jia W Y, Lu Z D,Huang Y, Zhou J M, Li Y K, Wang Y Y 1988 Acta Phys. Sin. 37 6 (in Chinese) [贾惟义、 鲁志东、 黄 绮、 周均铭、 李永康、 王彦云 1988 37 6]
[23] Li Z F, Lu W, Liu X Q, Shen X C, Fu Y, Willander M, Tan H H, Jagadish C 2000 Acta Phys. Sin. 49 1809 (in Chinese) [李志锋、 陆 卫、 刘兴权、 沈学础、 Fu Y, Willander M, Tan H H, Jagadish C 2000 49 1809]
[24] Jin S R, Xu Z Y 1994 Acta Phys. Sin. 43 384 (in Chinese) [金世荣、 徐仲英 1994 43 384]
[25] Niu Z C, Zhou Z Q, Lin Y W, Li X F, Zhang Y, Hu X W, Lü Z D, Xu Z Y 1997 Acta Phys. Sin. 46 969 (in Chinese) [牛智川、周增圻、林耀望、李新峰、张 益、胡雄伟、吕振东、徐仲英1997 46 969]
[26] Casey H C 1978 Heterostructure Lasers Part A: Fundamental Principle (New York: Academic Press) p188
[27] Shu Q, Shu Y C, Zhang G J, Liu R B, Yao J H, Pi B, Xing X D, Lin Y W, Xu J J, Wang Z G 2006 Acta Phys. Sin. 55 1379 (in Chinese) [舒 强、 舒永春、 张冠杰、 刘如彬、 姚江宏、 皮 彪、 邢晓东、 林耀望、 许京军、 王占国 2006 55 1379]
[28] Adachi S 1994 GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties (Singapore:World Scientific Press) p151
[29] Adachi S 1994 GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties (Singapore: World Scientific Press) p254
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