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High-current pulsed electron beam (HCPEB) technique is employed to irradiate the samples of polycrystalline pure nickel. The microstructures of the irradiated surface layers are investigated by using transmission electron microscopy (TEM). After HCPEB irradiation, very high value of residual stress is induced in the irradiated surface layer, which leads to the formation of dense dislocation walls and twins. Furthermore, a larger number of vacancy defect clusters including dislocation loops, stacking fault tetrahedra (SFT) and voids are also formed. Among three vacancy defect clusters, the number of SFT is much more than that of two other vacancy defect clusters. The lower dislocation density near the regions with dense SFT is observed and voids are likely to be present in these regions. It suggests that the stress with very high value and strain rate induced by rapid heating and cooling due to HCPEB irradiation could cause the shifting of the whole atomic plane synchronously.
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Keywords:
- high-current pulsed electron beam /
- polycrystalline pure nickle /
- vacancy defect cluster /
- stacking fault tetrahedra
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[2] Kiritani M 1997 Mater. Chem. Phys. 50 133
[3] Guan Q F, Pan L, Zou H, Zou G T 2004 J. Mater. Sci. 39 6349
[4] Guan Q F, Chen B, Zhang Q Y, Dong C, Zou G T 2008 Acta Phys. Sin. 57 392 (in Chinese) [关庆丰、 陈 波、 张庆瑜、 董 闯、 邹广田 2008 58 392]
[5] Guan Q F, Cheng D Q, Qiu D H, Zhu J, Wang X T, Cheng X W 2009 Acta Phys. Sin. 58 4846 (in Chinese) [关庆丰、 程笃庆、 邱冬华、 朱 健、 王雪涛、 程秀围 2009 58 4846]
[6] Guan Q F, Wang S Q, Cui X H, Zhang Q Y, Dong C 2007 ISIJ Int. 47 1375
[7] Proskurovsky D I, Rotshtein V P, Ozur G E, Markov A B, Nazarov D S 1998 J. Vac. Sci. Technol. A 16 2480
[8] Li Y S, Tao N R, Lu K 2008 Acta Mater. 56 230
[9] Kibey S, Liu J B, Johnson D D 2007 Acta Mater. 55 6843
[10] Cheng X W, Guan Q F, Fan X H, Chen B 2010 Chin. Phys. B 19 016103
[11] Kiritani M, Yoshiie T, Kojima S 1994 J. Nucl. Mater. 192 212
[12] Mansur L K 1978 J. Nucl. Sci. Technol. 40 5
[13] Singh B N, Zinkle S J 1993 J. Nucl. Mater 206 212
[14] Niwase K, Phillipp F, Sigle W, Seeger A 1999 J. Nucl. Mater 271-272 261
[15] Mukouda I, Shimomura Y 1999 J. Nucl. Mater 271-272 230
[16] Shimonmura Y, Mukouda I, Kiritani M, Kojima S, Garner F A 1997 J. Nucl. Mater. 212-125 352
[17] Shimonmura Y, Guinan M W,Diaz T 1993 J. Nucl. Mater. 205 374
[18] Silcox J, Hirsch P B 1959 Philos. Mag. 4 72
[19] Qiu D H, Cheng D Q, Guan Q F, Zou G T 2009 Chin. J. High Pressure Phys. 5 23 (in Chinese) [邱冬华、 程笃庆、 关庆丰、 邹广田 2009 高压 5 23]
[20] Kiritani M 2003 Mater. Sci. Eng. A 350 1
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[1] Feng D 2000 Metallogrphy Physics (Vol.1) (Beijing: Science Press) p226 (in Chinese) [冯 端 2000 金属物理学 (第一卷)(北京: 科学出版社) 第226页]
[2] Kiritani M 1997 Mater. Chem. Phys. 50 133
[3] Guan Q F, Pan L, Zou H, Zou G T 2004 J. Mater. Sci. 39 6349
[4] Guan Q F, Chen B, Zhang Q Y, Dong C, Zou G T 2008 Acta Phys. Sin. 57 392 (in Chinese) [关庆丰、 陈 波、 张庆瑜、 董 闯、 邹广田 2008 58 392]
[5] Guan Q F, Cheng D Q, Qiu D H, Zhu J, Wang X T, Cheng X W 2009 Acta Phys. Sin. 58 4846 (in Chinese) [关庆丰、 程笃庆、 邱冬华、 朱 健、 王雪涛、 程秀围 2009 58 4846]
[6] Guan Q F, Wang S Q, Cui X H, Zhang Q Y, Dong C 2007 ISIJ Int. 47 1375
[7] Proskurovsky D I, Rotshtein V P, Ozur G E, Markov A B, Nazarov D S 1998 J. Vac. Sci. Technol. A 16 2480
[8] Li Y S, Tao N R, Lu K 2008 Acta Mater. 56 230
[9] Kibey S, Liu J B, Johnson D D 2007 Acta Mater. 55 6843
[10] Cheng X W, Guan Q F, Fan X H, Chen B 2010 Chin. Phys. B 19 016103
[11] Kiritani M, Yoshiie T, Kojima S 1994 J. Nucl. Mater. 192 212
[12] Mansur L K 1978 J. Nucl. Sci. Technol. 40 5
[13] Singh B N, Zinkle S J 1993 J. Nucl. Mater 206 212
[14] Niwase K, Phillipp F, Sigle W, Seeger A 1999 J. Nucl. Mater 271-272 261
[15] Mukouda I, Shimomura Y 1999 J. Nucl. Mater 271-272 230
[16] Shimonmura Y, Mukouda I, Kiritani M, Kojima S, Garner F A 1997 J. Nucl. Mater. 212-125 352
[17] Shimonmura Y, Guinan M W,Diaz T 1993 J. Nucl. Mater. 205 374
[18] Silcox J, Hirsch P B 1959 Philos. Mag. 4 72
[19] Qiu D H, Cheng D Q, Guan Q F, Zou G T 2009 Chin. J. High Pressure Phys. 5 23 (in Chinese) [邱冬华、 程笃庆、 关庆丰、 邹广田 2009 高压 5 23]
[20] Kiritani M 2003 Mater. Sci. Eng. A 350 1
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