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We report the growth and characterization of AlGaN/GaN heterostructures with AlN/GaN superlattices as the barrier layer.It is found that the surface morphology of the heterostructure is greatly improved compared with those using the conventional alloy AlGaN barrier layer.Meanwhile, electric properties of samples with high Al composition (≥40%) are superior to the conventional alloy sanples.Low sheet resistance (251 Ω/□) is obtained for our samples with 40% Al content.
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Keywords:
- AlGaN/GaN heterostructure /
- AlN/GaN superlattices /
- two dimensional electron gas /
- high electron mobility transistor
[1] Piao G, Shimizu M, Okumura H 2004 Compound Semiconductors 2004, Proceeding of the 31st International Symposium on Compound Semiconductors 184 243
[2] 2000 J. Appl. Phys 87 334
[3] J. Cryst. Growth 272 420
[4] Smorchkova I P, Keller S, Heikman S, Elsass C R, Heying B, Fini P, Speck J S, Mishra U K 2000 Appl. Phys. Lett. 24 3998
[5] [6] Miyoshi M, Sakai M, Ishikawa H, Egawa T, Jimbo T, Tanaka M, Oda O 2004 J. Cryst. Growth 272 293
[7] Arulkumaran S, Egawa T, Ishikawa H, Jimbo T 2003 J. Vac. Sci. Technol. B 21 888
[8] Keller S, Parish G, Fini P T, Heikman S, Chen C H, Zhang N, DenBaars S P, Mishra U K, Wu Y F 1999 J. Appl. Phys. 86 5850
[9] Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J 1999 J. Appl. Phys. 85 3222
[10] Ridley B K, Ambacher O, Eastman L F 2000 Semicond. Sci. Technol. 15 270
[11] Smorchkova I P, Elsass C R, Lbbetson J P, Vetury R, Heying B, Fini P, Haus E, DenBaars S P, Speck J S, Mishra U K 1999 J. Appl. Phys. 86 4520
[12] Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F
[13] Dimitrov R, Murphy M, Smart J, Schaff W, Shealy J R, Eastman L F, Ambacher O, Stutzmann M 2000 J. Appl. Phys. 87 3375
[14] Elass C R, Smorchkova I P, Heying B, Haus E, Poblenz C, Fini P, Maranowski K, Petroff P M, DenBaars S P, Mishra U K, Speck J S, Saxler A, Elhamri S, Mitchel W C 2000 Jpn. J. Appl. Phys. Part 39 L1023
[15] Webb J B, Tang H, Bardwell J A, Coleridge P 2001 Appl. Phys. Lett. 78 3845
[16] Yu T H, Brennan K F 2001 J. Appl. Phys. 89 3827
[17] Pophristic M, Guo S P, Peres B 2003 Appl. Phys. Lett. 82 4289
[18] Zhang J P, Wang H M, Gaevski M E, Chen C Q, Fareed Q, Yang J W, Simin G, Khan M A 2003 Appl. Phys. Lett. 80 3542
[19] Wang H M, Zhang J P, Chen C Q, Fareed Q, Yang J W, Khan M A 2002 Appl. Phys. Lett. 81 604
[20] Yamaguchi S, Kosaki M, Watanabe Y, Nitta S, Amano H, Akasaki I 2001 Appl. Phys. Lett. 79 3062
[21] Liu Z, Wang X L, Wang J X, Hu G X, Guo L C, Li J M 2007 Chin. Phys. 16 1467
[22] Kawakami Y, Shen X Q, Piao G, Shimizu M, Okumura H 2007 J. Cryst. Growth 300 168
[23] Nakamura S 1991 Jpn. J. Appl. Phys. 30 L1705
[24] Kondratyev A V, Talalaev R A, Lundin W V, Sakharov A V, Tsatsul’nikov A V, Zavarin E E, Fomin A V, Sizov D S 2004
[25] Jeganathan K, Ide T, Shimizu M, Okumura H 2003 J. Appl. Phys. 94 3260
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[1] Piao G, Shimizu M, Okumura H 2004 Compound Semiconductors 2004, Proceeding of the 31st International Symposium on Compound Semiconductors 184 243
[2] 2000 J. Appl. Phys 87 334
[3] J. Cryst. Growth 272 420
[4] Smorchkova I P, Keller S, Heikman S, Elsass C R, Heying B, Fini P, Speck J S, Mishra U K 2000 Appl. Phys. Lett. 24 3998
[5] [6] Miyoshi M, Sakai M, Ishikawa H, Egawa T, Jimbo T, Tanaka M, Oda O 2004 J. Cryst. Growth 272 293
[7] Arulkumaran S, Egawa T, Ishikawa H, Jimbo T 2003 J. Vac. Sci. Technol. B 21 888
[8] Keller S, Parish G, Fini P T, Heikman S, Chen C H, Zhang N, DenBaars S P, Mishra U K, Wu Y F 1999 J. Appl. Phys. 86 5850
[9] Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J 1999 J. Appl. Phys. 85 3222
[10] Ridley B K, Ambacher O, Eastman L F 2000 Semicond. Sci. Technol. 15 270
[11] Smorchkova I P, Elsass C R, Lbbetson J P, Vetury R, Heying B, Fini P, Haus E, DenBaars S P, Speck J S, Mishra U K 1999 J. Appl. Phys. 86 4520
[12] Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F
[13] Dimitrov R, Murphy M, Smart J, Schaff W, Shealy J R, Eastman L F, Ambacher O, Stutzmann M 2000 J. Appl. Phys. 87 3375
[14] Elass C R, Smorchkova I P, Heying B, Haus E, Poblenz C, Fini P, Maranowski K, Petroff P M, DenBaars S P, Mishra U K, Speck J S, Saxler A, Elhamri S, Mitchel W C 2000 Jpn. J. Appl. Phys. Part 39 L1023
[15] Webb J B, Tang H, Bardwell J A, Coleridge P 2001 Appl. Phys. Lett. 78 3845
[16] Yu T H, Brennan K F 2001 J. Appl. Phys. 89 3827
[17] Pophristic M, Guo S P, Peres B 2003 Appl. Phys. Lett. 82 4289
[18] Zhang J P, Wang H M, Gaevski M E, Chen C Q, Fareed Q, Yang J W, Simin G, Khan M A 2003 Appl. Phys. Lett. 80 3542
[19] Wang H M, Zhang J P, Chen C Q, Fareed Q, Yang J W, Khan M A 2002 Appl. Phys. Lett. 81 604
[20] Yamaguchi S, Kosaki M, Watanabe Y, Nitta S, Amano H, Akasaki I 2001 Appl. Phys. Lett. 79 3062
[21] Liu Z, Wang X L, Wang J X, Hu G X, Guo L C, Li J M 2007 Chin. Phys. 16 1467
[22] Kawakami Y, Shen X Q, Piao G, Shimizu M, Okumura H 2007 J. Cryst. Growth 300 168
[23] Nakamura S 1991 Jpn. J. Appl. Phys. 30 L1705
[24] Kondratyev A V, Talalaev R A, Lundin W V, Sakharov A V, Tsatsul’nikov A V, Zavarin E E, Fomin A V, Sizov D S 2004
[25] Jeganathan K, Ide T, Shimizu M, Okumura H 2003 J. Appl. Phys. 94 3260
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