| [1] |
You Ming-Hui, Li Xue, Li Shi-Jun, Liu Guo-Jun. Growth of lattice matched InAs/AlSb superlattices by molecular beam epitaxy. Acta Physica Sinica,
2023, 72(1): 014203.
doi: 10.7498/aps.72.20221383
|
| [2] |
Du An-Tian, Liu Ruo-Tao, Cao Chun-Fang, Han Shi-Xian, Wang Hai-Long, Gong Qian. Improving structure design of active region of InAs quantum dots by using InAs/GaAs digital alloy superlattice. Acta Physica Sinica,
2023, 72(12): 128101.
doi: 10.7498/aps.72.20230270
|
| [3] |
Li Pei-Gen, Zhang Ji-Hai, Tao Ye, Zhong Ding-Yong. Two-dimensional magnetic transition metal halides: molecular beam epitaxy growth and physical property modulation. Acta Physica Sinica,
2022, 71(12): 127505.
doi: 10.7498/aps.71.20220727
|
| [4] |
Xiao Jia-Xing, Lu Jun, Zhu Li-Jun, Zhao Jian-Hua. Perpendicular magnetic properties of ultrathin L10-Mn1.67Ga films grown by molecular-beam epitaxy. Acta Physica Sinica,
2016, 65(11): 118105.
doi: 10.7498/aps.65.118105
|
| [5] |
Zhang Ma-Lin, Ge Jian-Feng, Duan Ming-Chao, Yao Gang, Liu Zhi-Long, Guan Dan-Dan, Li Yao-Yi, Qian Dong, Liu Can-Hua, Jia Jin-Feng. Molecular beam epitaxy growth of multilayer FeSe thin film on SrTiO3 (001). Acta Physica Sinica,
2016, 65(12): 127401.
doi: 10.7498/aps.65.127401
|
| [6] |
Liu Ke, Ma Wen-Quan, Huang Jian-Liang, Zhang Yan-Hua, Cao Yu-Lian, Huang Wen-Jun, Zhao Cheng-Cheng. Three-color InAs/GaAs quantum dot infrared photodetector with AlGaAs inserting layer. Acta Physica Sinica,
2016, 65(10): 108502.
doi: 10.7498/aps.65.108502
|
| [7] |
Yang Wen-Xian, Ji Lian, Dai Pan, Tan Ming, Wu Yuan-Yuan, Lu Jian-Ya, Li Bao-Ji, Gu Jun, Lu Shu-Long, Ma Zhong-Quan. Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxy. Acta Physica Sinica,
2015, 64(17): 177802.
doi: 10.7498/aps.64.177802
|
| [8] |
Zhu Meng-Yao, Lu Jun, Ma Jia-Lin, Li Li-Xia, Wang Hai-Long, Pan Dong, Zhao Jian-Hua. Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films. Acta Physica Sinica,
2015, 64(7): 077501.
doi: 10.7498/aps.64.077501
|
| [9] |
Wang Meng, Ou Yun-Bo, Li Fang-Sen, Zhang Wen-Hao, Tang Chen-Jia, Wang Li-Li, Xue Qi-Kun, Ma Xu-Cun. Molecular beam epitaxy of single unit-cell FeSe superconducting films on SrTiO3(001). Acta Physica Sinica,
2014, 63(2): 027401.
doi: 10.7498/aps.63.027401
|
| [10] |
Wan Wen-Jian, Yin Rong, Tan Zhi-Yong, Wang Feng, Han Ying-Jun, Cao Jun-Cheng. Study of 2.9 THz quantum cascade laser based on bound-to-continuum transition. Acta Physica Sinica,
2013, 62(21): 210701.
doi: 10.7498/aps.62.210701
|
| [11] |
Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming. Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2011, 60(2): 028101.
doi: 10.7498/aps.60.028101
|
| [12] |
Zhao Ming-Hai, Sun Jing-Jing, Wang Dan, Zou Zhi-Qiang, Liang Qi. STM studies of the epitaxial growth of C60 molecules on Si(111)-7×7 surface. Acta Physica Sinica,
2010, 59(1): 636-642.
doi: 10.7498/aps.59.636
|
| [13] |
Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao. InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2010, 59(11): 8026-8030.
doi: 10.7498/aps.59.8026
|
| [14] |
Chang Jun, Li Hua, Han Ying-Jun, Tan Zhi-Yong, Cao Jun-Cheng. Material growth and characterization of terahertz quantum-cascade lasers. Acta Physica Sinica,
2009, 58(10): 7083-7087.
doi: 10.7498/aps.58.7083
|
| [15] |
Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng. Photoluminescence study of (GaAs1－xSbx/InyGa1－yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy. Acta Physica Sinica,
2005, 54(6): 2950-2954.
doi: 10.7498/aps.54.2950
|
| [16] |
Zhu Yun, Wang Tai-Hong. Investigations of three-terminal electronic measurement on quantum dot devices. Acta Physica Sinica,
2003, 52(3): 677-682.
doi: 10.7498/aps.52.677
|
| [17] |
Zhao Ji-Gang, Shao Bin, Wang Tai-Hong. . Acta Physica Sinica,
2002, 51(6): 1355-1359.
doi: 10.7498/aps.51.1355
|
| [18] |
LI HONG-WEI, WANG TAI-HONG. CURRENT TRANSPORT PROPERTIES OF GaAs SCHOTTKY DIODE CONTAINING InAs SELF-ASSEMBLED QUANTUM DOTS. Acta Physica Sinica,
2001, 50(2): 262-267.
doi: 10.7498/aps.50.262
|
| [19] |
LI HONG-WEI, WANG TAI-HONG. CORRELATED DISCHARGING OF InAs QUANTUM DOTS IN METAL-SEMICONDUCTOR-METAL STRUCTURE. Acta Physica Sinica,
2001, 50(10): 2038-2043.
doi: 10.7498/aps.50.2038
|
| [20] |
JING CHAO, JIN XIAO-FENG, DONG GUO-SHENG, GONG XIAO-YAN, YU LI-MING, ZHENG WEI-MIN. EXCHANGE BIASING IN MOLECULAR-BEAM-EPITAXY-GROWN Fe/Fe50Mn50 BILAYERS. Acta Physica Sinica,
2000, 49(10): 2022-2026.
doi: 10.7498/aps.49.2022
|
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