[1] |
Wan Ming-Jun, Li Chun-Fu, Wen Ping, Zhang Feng-Chun, Wang Yao, Liu En-Zuo. The bond characters and phase stability effects of Cr Mo and Ni in bulk -Fe(C. Acta Physica Sinica,
2016, 65(3): 037101.
doi: 10.7498/aps.65.037101
|
[2] |
Wang Hong, Yun Feng, Liu Shuo, Huang Ya-Ping, Wang Yue, Zhang Wei-Han, Wei Zheng-Hong, Ding Wen, Li Yu-Feng, Zhang Ye, Guo Mao-Feng. Effect of wafer bonding and laser liftoff process on residual stress of GaN-based vertical light emitting diode chips. Acta Physica Sinica,
2015, 64(2): 028501.
doi: 10.7498/aps.64.028501
|
[3] |
Yang Qing-Ling, Tan Yik-Yee, Wu Xing, Sim Kok Swee, Sun Li-Tao. In-situ investigation on the growth of Cu-Al intermetallic compounds in Cu wire bonding. Acta Physica Sinica,
2015, 64(21): 216804.
doi: 10.7498/aps.64.216804
|
[4] |
Wen Ping, Li Chun-Fu, Zhao Yi, Zhang Feng-Chun, Tong Li-Hua. First principles calculation of occupancy, bonding characteristics and alloying effect of Cr, Mo, Ni in bulk α-Fe?. Acta Physica Sinica,
2014, 63(19): 197101.
doi: 10.7498/aps.63.197101
|
[5] |
Peng Hong-Ling, Zhang Wei, Sun Li-Jie, Ma Shao-Dong, Shi Yan, Qu Hong-Wei, Zhang Ye-Jin, Zheng Wan-Hua. Research on three-junction bonding solar cell. Acta Physica Sinica,
2014, 63(17): 178801.
doi: 10.7498/aps.63.178801
|
[6] |
Chen Li-Qun, Yu Tao, Peng Xiao-Fang, Liu Jian. The site preference of refractory element W in NiAl dislocation core and its effects on bond characters. Acta Physica Sinica,
2013, 62(11): 117101.
doi: 10.7498/aps.62.117101
|
[7] |
Jiang Li-Hua, Zeng Xiang-Bin, Zhang Xiao. The variations in composition and bonding configuration of SiNx film under high annealing temperature treatment. Acta Physica Sinica,
2012, 61(1): 016803.
doi: 10.7498/aps.61.016803
|
[8] |
Xue Jin-Xiang, Zhang Ri-Guang, Liu Yan-Ping, Wang Bao-Jun. The Alloying of Ti, C, N in Bulk -Fe and Their Effects on Bond Characters. Acta Physica Sinica,
2012, 61(12): 127101.
doi: 10.7498/aps.61.127101
|
[9] |
Yan Xiao-Juan, Li Zhi-Xin, Zhang Yong-Zhi, Wang Le, Hu Zhi-Yu, Ma Wei-Guang, Zhang Lei, Yin Wang-Bao, Jia Suo-Tang. The Hansch-Couillaud frequency locking mechanism of dual-wavelength external cavity resonance system based on diffusion bonded KTP crystal. Acta Physica Sinica,
2011, 60(10): 104210.
doi: 10.7498/aps.60.104210
|
[10] |
Chen Cheng-Zhao, Li Ping, Lin Xuan-Ying, Liu Cui-Qing, Qiu Sheng-Hua, Wu Yan-Dan, Yu Chu-Ying. Infrared analysis on hydrogen content and Si—H bonding configuration of hydrogenated nanocrystalline silicon thin films. Acta Physica Sinica,
2009, 58(4): 2565-2571.
doi: 10.7498/aps.58.2565
|
[11] |
Shang Jia-Xiang, Yu Xian-Yang. The site preference of 3d transition metals in NiAl and its effects on bond characters. Acta Physica Sinica,
2008, 57(4): 2380-2385.
doi: 10.7498/aps.57.2380
|
[12] |
He Guo-Rong, Zheng Wan-Hua, Qu Hong-Wei, Yang Guo-Hua, Wang Qing, Cao Yu-Lian, Chen Liang-Hui. Influence of fused interface on the optical and thermal characteristics of vertical cavity lasers. Acta Physica Sinica,
2008, 57(3): 1840-1845.
doi: 10.7498/aps.57.1840
|
[13] |
Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng. Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films. Acta Physica Sinica,
2008, 57(6): 3661-3665.
doi: 10.7498/aps.57.3661
|
[14] |
Song Ai-Jun, Han Lei. Study of nonlinear identification of time series of vibration on transducer in ultrasonic bonding system. Acta Physica Sinica,
2007, 56(7): 3820-3826.
doi: 10.7498/aps.56.3820
|
[15] |
Yu Wei, Zhang Li, Wang Bao-Zhu, Lu Wan-Bing, Wang Li-Wei, Fu Guang-Sheng. Hydrogen bonding configurations and energy band structures of hydrogenated nanocrystalline silicon films. Acta Physica Sinica,
2006, 55(4): 1936-1941.
doi: 10.7498/aps.55.1936
|
[16] |
Lao Yan-Feng, Wu Hui-Zhen. Study on infrared absorption of interfaces in direct wafer bonded InP-GaAs structures. Acta Physica Sinica,
2005, 54(9): 4334-4339.
doi: 10.7498/aps.54.4334
|
[17] |
Luo Zhi, Lin Xuan-Ying, Lin Shun-Hui, Yu Chu-Ying, Lin Kui-Xun, Yu Yun-Peng, Tan Wei-Feng. Infrared analysis on hydrogen content and Si-H bonding configurations of hydrogenated amorphous silicon films. Acta Physica Sinica,
2003, 52(1): 169-174.
doi: 10.7498/aps.52.169
|
[18] |
LU LI-WU, ZHOU JIE, FENG SONG-LIN, QIAN ZHAO-MING, PENG QING. THE DEEP LEVEL STUDIES OF n-Si/n+-Si INTERFACE IN SILICON DIRECT BONDING. Acta Physica Sinica,
1994, 43(5): 785-789.
doi: 10.7498/aps.43.785
|
[19] |
MA HONG-LEI, ZHOU YU-FANG, LI DUN-YIN. EFFECTS OF BONDED HYDROGEN ON THE PHOTOLUMINESCENCE PROPERTIES OF GD a-Si:H THIN FILMS. Acta Physica Sinica,
1986, 35(6): 725-730.
doi: 10.7498/aps.35.725
|
[20] |
HE YU-LIANG, YAN YONG-HONG. THE EFFECT OF CRYSTALLIZATION ON HYDROGEN CONTENTS AND BONDING STRUCTURE OF A-Si:H FILMS. Acta Physica Sinica,
1984, 33(10): 1472-1474.
doi: 10.7498/aps.33.1472
|