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Zhou Xiao-Hong, Yang Qing, Zou Jun-Tao, Liang Shu-Hua. Effects of growth conditions on the microstructures and photoluminescence properties of Ga-doped ZnO films. Acta Physica Sinica,
2015, 64(8): 087803.
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Wang Hong, Yun Feng, Liu Shuo, Huang Ya-Ping, Wang Yue, Zhang Wei-Han, Wei Zheng-Hong, Ding Wen, Li Yu-Feng, Zhang Ye, Guo Mao-Feng. Effect of wafer bonding and laser liftoff process on residual stress of GaN-based vertical light emitting diode chips. Acta Physica Sinica,
2015, 64(2): 028501.
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2014, 63(7): 076801.
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Liu Zhi, Li Ya-Ming, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate. Acta Physica Sinica,
2013, 62(7): 076108.
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Chen Li-Qun, Yu Tao, Peng Xiao-Fang, Liu Jian. The site preference of refractory element W in NiAl dislocation core and its effects on bond characters. Acta Physica Sinica,
2013, 62(11): 117101.
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2012, 61(12): 127101.
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2008, 57(3): 1840-1845.
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Shang Jia-Xiang, Yu Xian-Yang. The site preference of 3d transition metals in NiAl and its effects on bond characters. Acta Physica Sinica,
2008, 57(4): 2380-2385.
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2008, 57(6): 3661-3665.
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Yu Wei, Zhang Li, Wang Bao-Zhu, Lu Wan-Bing, Wang Li-Wei, Fu Guang-Sheng. Hydrogen bonding configurations and energy band structures of hydrogenated nanocrystalline silicon films. Acta Physica Sinica,
2006, 55(4): 1936-1941.
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Yuan Yan-Hong, Hou Xun, Gao Heng. Effect of ultrasonic treatment on ZnO film photoluminescence. Acta Physica Sinica,
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2004, 53(4): 1236-1242.
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2004, 53(1): 204-209.
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2003, 52(1): 169-174.
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