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Ma Ping, Han Yi-Ping, Zhang Ning, Tian De-Yang, Shi An-Hua, Song Qiang. Experimental investigation on all-target electromagnetic scattering characteristics of hypervelocity HTV2-like flight model. Acta Physica Sinica,
2022, 71(8): 084101.
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Liu Chang-Shi. A reliable and accurate model of photoelectron yield spectrum and its applications. Acta Physica Sinica,
2021, 70(10): 103301.
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Xie Tian-Ci, Zhang Bin, He Bo, Li Hao-Peng, Qin Zhuang, Qian Jin-Qian, Shi Qie-Ming, Lewis Elfed, Sun Wei-Min. Mathematical algorithm model of absolute dose in radiotherapy. Acta Physica Sinica,
2021, 70(1): 018701.
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Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei. Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2021, 70(21): 217301.
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Liu Nai-Zhang, Zhang Xue-Bing, Yao Ruo-He. The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances. Acta Physica Sinica,
2020, 69(7): 077302.
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Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming. Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor. Acta Physica Sinica,
2016, 65(1): 018501.
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Sun Yun-Li, Wang Chang-Hui, Le Zi-Chun. Analysis of the tunable liquid gradient index based on optofluidics. Acta Physica Sinica,
2014, 63(15): 154701.
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Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue. A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2012, 61(4): 047301.
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Jiang Zhi-Hong, Wang Hui, Gao Chao. A evolving network model generated by random walk and policy attachment. Acta Physica Sinica,
2011, 60(5): 058903.
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Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong. An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica,
2011, 60(9): 097302.
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Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming. Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica,
2011, 60(1): 017202.
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Shen Zi-Cai, Kong Wei-Jin, Feng Wei-Quan, Ding Yi-Gang, Liu Yu-Ming, Zheng Hui-Qi, Zhao Xue, Zhao Chun-Qing. Degradation model of the optical properties of the thermal control coatings. Acta Physica Sinica,
2009, 58(2): 860-864.
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Li Qi, Zhang Bo, Li Zhao-Ji. A new analytical model of breakdown voltage for the SD LDMOS. Acta Physica Sinica,
2008, 57(3): 1891-1896.
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Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica,
2007, 56(6): 3504-3508.
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Shen Zi-Cai, Shen Jian, Liu Shi-Jie, Kong Wei-Jin, Shao Jian-Da, Fan Zheng-Xiu. Discussion on the stratified merit of graded index coatings. Acta Physica Sinica,
2007, 56(3): 1325-1328.
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Liu Jing, Sun Jun-Qiang, Huang De-Xiu, Huang Chong-Qing, Wu Ming. Modulated photon confined states with graded-index photonic quantum well structure. Acta Physica Sinica,
2007, 56(4): 2281-2285.
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Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng. Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias. Acta Physica Sinica,
2006, 55(7): 3622-3628.
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Shen Zi-Cai, Kong Wei-Jin, Liu Shi-Jie, Shen Jian, Shao Jian-Da, Fan Zheng-Xiu. Refractive index analysis of graded index coatings prepared by glancing angle deposition. Acta Physica Sinica,
2006, 55(10): 5157-5160.
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Ma Zhong-Fa, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin, Li Wei-Hua. A physical-based percolation model for gate oxide TDDB. Acta Physica Sinica,
2003, 52(8): 2046-2051.
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LIU HONG-XIA, FANG JIAN-PING, HAO YUE. EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE. Acta Physica Sinica,
2001, 50(6): 1172-1177.
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