In this paper we suggest a radiation mobility shift model for the nonuniform channel metal-oxide-semiconductor(MOS). The distribution of two-dimensional(2D)-electric field and 2D-interaction potential, which is caused by the interaction between the ionized impurity in the depletion layer and radiation-induced positive spatial charge, is analyzed by using image charge method. The mobility expression of n-type and p-type nonuniform channel MOS is proposed. Using 2D simulator MEDICI, we simulate the mobility shift with the radiation-induced positive spatial charge. The nonuniform channel MOS's mobility shift numerical results agree well with the analytical results. Uniform channel MOS's mobility shift value agrees with that of the experiment.
下载:
