| [1] |
Liu Xiao-Jun, Yang Xue. Mechanism of fluorescence enhancement of HClO detected by excited-state intramolecular proton transfer based HBT-OMe molecule. Acta Physica Sinica,
2023, 72(11): 113101.
doi: 10.7498/aps.72.20222313
|
| [2] |
Zhang Yan-Wen, Guo Gang, Xiao Shu-Yan, Yin Qian, Yang Xin-Yu. Measurement of medium-energy proton flux. Acta Physica Sinica,
2022, 71(1): 012902.
doi: 10.7498/aps.71.20211561
|
| [3] |
Gao Cheng-Hao, Xu Feng, Zhang Li, Zhao De-Sheng, Wei Xing, Che Ling-Juan, Zhuang Yong-Zhang, Zhang Bao-Shun, Zhang Jing. Ion implantation isolation based micro-light-emitting diode device array properties. Acta Physica Sinica,
2020, 69(2): 027802.
doi: 10.7498/aps.69.20191418
|
| [4] |
Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An. Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials. Acta Physica Sinica,
2013, 62(11): 117303.
doi: 10.7498/aps.62.117303
|
| [5] |
Mao Ming-Ming, Xu Chen, Wei Si-Min, Xie Yi-Yang, Liu Jiu-Cheng, Xu Kun. The effects of proton implant energy on threshold and output power of vertical cavity surface emitting laser. Acta Physica Sinica,
2012, 61(21): 214207.
doi: 10.7498/aps.61.214207
|
| [6] |
Wang Zhi-Ming. Spin injection in GaAs and giant Hall effect. Acta Physica Sinica,
2011, 60(7): 077203.
doi: 10.7498/aps.60.077203
|
| [7] |
Zheng Jia-Jin, Lu Yun-Qing, Li Pei-Li. Optical nonlinearities of excited state intramolecular proton transfer molecule HBT. Acta Physica Sinica,
2010, 59(7): 4687-4693.
doi: 10.7498/aps.59.4687
|
| [8] |
Liu Yu-Min, Yu Zhong-Yuan, Ren Xiao-Min. Effects of the thickness of spacing layer and capping layer on the strain distribution and wavelength emission of InAs/GaAs quantum dot. Acta Physica Sinica,
2009, 58(1): 66-72.
doi: 10.7498/aps.58.66
|
| [9] |
Tang Xin-Xin, Luo Wen-Yun, Wang Chao-Zhuang, He Xin-Fu, Zha Yuan-Zi, Fan Sheng, Huang Xiao-Long, Wang Chuan-Shan. Non-ionizing energy loss of low energy proton in semiconductor materials Si and GaAs. Acta Physica Sinica,
2008, 57(2): 1266-1270.
doi: 10.7498/aps.57.1266
|
| [10] |
Chen Gui-Bin, Li Zhi-Feng, Cai Wei-Ying, He Li, Hu Xiao-Ning, Lu Wei, Shen Xue-Chu. Study of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTe. Acta Physica Sinica,
2003, 52(6): 1496-1499.
doi: 10.7498/aps.52.1496
|
| [11] |
Shao Jun. Spectroscopic derivative in optical study of GaInAs/InP and GaInP/AlGaInP multip le quantum wells. Acta Physica Sinica,
2003, 52(10): 2534-2540.
doi: 10.7498/aps.52.2534
|
| [12] |
MIU ZHONG-LIN, CHEN PING-PING, CAI WEI-YING, LI ZHI-FENG, XU WEN-LAN, YUAN XIAN-ZHANG, LIU PING, SHI GUO-LIANG, CHEN CHANG-MING, ZHU DE-ZHANG, PAN HAO-CHANG, HU JUN, LI MING-QIAN, LU WEI. . Acta Physica Sinica,
2001, 50(1): 116-119.
doi: 10.7498/aps.50.116
|
| [13] |
ZHANG XING-HONG, HU YU-SHENG, WU JIE, CHENG ZHI-QUN, XIA GUAN-QUN, XU YUAN-SEN, CHEN ZHANG-HAI, GUI YONG-SHENG, CHU JUN-HAO. INFLUENCE OF DEEP LEVELS ON THE PERFORMANCE OF AlGaInP/GaAs HETEROJUNCTION BIPOLAR TRANSISTOR. Acta Physica Sinica,
1999, 48(3): 556-560.
doi: 10.7498/aps.48.556
|
| [14] |
Wu Zheng-Yun, Huang Qi-Sheng. . Acta Physica Sinica,
1995, 44(9): 1461-1466.
doi: 10.7498/aps.44.1461
|
| [15] |
Chen Kai-mao, Jin Si-xuan, Qiu Su-juan, Lü Yun-an, He Mei-feng, Lan Li-qiao. γ RADIATION DEFECTS IN SEMI-INSULATING LEC GaAa AFTER SHALLOW IMPURITY IMPLANTATION. Acta Physica Sinica,
1994, 43(8): 1344-1351.
doi: 10.7498/aps.43.1344
|
| [16] |
LIU SHI-JIE, S. U. CAMPISANO. LASER PULSE ANNEALING ION-IMPLANTED GaAs. Acta Physica Sinica,
1988, 37(5): 842-846.
doi: 10.7498/aps.37.842
|
| [17] |
DU YONG-CHANG, YAN MAO-XUN, ZHANG YU-FENG, GUO HAI, HU KE-LIANG. INFRARED ABSORPTION OF DOPED SILICON PASSIVATED BY ATOMIC HYDROGEN, DEUTERIUM AND IMPLANTED BY PROTON. Acta Physica Sinica,
1987, 36(11): 1427-1432.
doi: 10.7498/aps.36.1427
|
| [18] |
WANG WEI-YUAN, XIA GUAN-QUN, LU JIAN-GUO, SHAO YONG-FU, QIAO YONG. CARRIER PROFILE TAIL IN SILICON IMPLANTED Cr-DOPED SEMI-INSULATING GaAs SUBSTRATE. Acta Physica Sinica,
1985, 34(3): 402-407.
doi: 10.7498/aps.34.402
|
| [19] |
GU SHI-JIE, HUO CHONG-RU. PROFILES OF JUNCTION CURRENT AND CARRIER-CONCEN-TRATION IN GaAs INJECTION LASERS WITH FILAMENT. Acta Physica Sinica,
1979, 28(1): 21-32.
doi: 10.7498/aps.28.21
|
| [20] |
WANG WEI-YUAN, XU JING-YANG, NI QI-MIN, TAN RU-HUAN, LIU YUE-QIN, QIU YUE-YING. A STUDY OF PROTON IMPLANTATION FOR GaAs. Acta Physica Sinica,
1979, 28(5): 86-95.
doi: 10.7498/aps.28.86
|
下载:
