Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Study of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTe

Chen Gui-Bin Li Zhi-Feng Cai Wei-Ying He Li Hu Xiao-Ning Lu Wei Shen Xue-Chu

Citation:

Study of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTe

Chen Gui-Bin, Li Zhi-Feng, Cai Wei-Ying, He Li, Hu Xiao-Ning, Lu Wei, Shen Xue-Chu
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  7700
  • PDF Downloads:  847
  • Cited By: 0
Publishing process
  • Received Date:  09 July 2002
  • Accepted Date:  31 October 2002
  • Published Online:  05 March 2003

/

返回文章
返回
Baidu
map