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2019, 68(11): 117301.
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2018, 67(23): 237802.
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica,
2013, 62(20): 207303.
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Jiang Bing-Yi, Zheng Jian-Bang, Wang Chun-Feng, Hao Juan, Cao Chong-De. Optimization of quantum dot solar cells based on structures of GaAs/InAs-GaAs/ZnSe. Acta Physica Sinica,
2012, 61(13): 138801.
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Zheng Ying-Ying, Deng Hai-Tao, Wan Jing, Li Chao-Rong. Bandgap energy tuning and photoelectrical properties of self-assembly quantum well structure in organic-inorganic hybrid perovskites. Acta Physica Sinica,
2011, 60(6): 067306.
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Tian Peng, Huang Li-Rong, Fei Shu-Ping, Yu Yi, Pan Bin, Xu Wei, Huang De-Xiu. Effect of different cap layers on the structure and optical properties of InAs/GaAs self-assembled quantum dot. Acta Physica Sinica,
2010, 59(8): 5738-5742.
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Ji Hai-Ming, Cao Yu-Lian, Yang Tao, Ma Wen-Quan, Cao Qing, Chen Liang-Hui. Characteristic study of maximum modal gain of p-doped 1.3 μm InAs/GaAs quantum dot lasers. Acta Physica Sinica,
2009, 58(3): 1896-1900.
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Liu Yu-Min, Yu Zhong-Yuan, Ren Xiao-Min. Effects of the thickness of spacing layer and capping layer on the strain distribution and wavelength emission of InAs/GaAs quantum dot. Acta Physica Sinica,
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Jiang Zhong-Wei, Wang Wen-Xin, Gao Han-Chao, Li Hui, He Tao, Yang Cheng-Liang, Chen Hong, Zhou Jun-Ming. Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots. Acta Physica Sinica,
2009, 58(1): 471-476.
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Song Yu-Xin, Yu Zhong-Yuan, Liu Yu-Min. Influences of flux and interruption on InAs/GaAs quantum dot superlattice growth. Acta Physica Sinica,
2008, 57(4): 2399-2403.
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Hu Liang-Jun, Chen Yong-Hai, Ye Xiao-Ling, Wang Zhan-Guo. Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation. Acta Physica Sinica,
2007, 56(8): 4930-4935.
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Liu Yu-Min, Yu Zhong-Yuan, Yang Hong-Bo, Huang Yong-Zhen. Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field. Acta Physica Sinica,
2006, 55(10): 5023-5029.
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Tang Nai-Yun, Ji Ya-Lin, Chen Xiao-Shuang, Lu Wei. Effect of proton implantation on photoluminescence of self-assembled InAs/GaAs quantum dots. Acta Physica Sinica,
2005, 54(6): 2904-2909.
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2002, 51(6): 1355-1359.
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LI HONG-WEI, WANG TAI-HONG. CORRELATED DISCHARGING OF InAs QUANTUM DOTS IN METAL-SEMICONDUCTOR-METAL STRUCTURE. Acta Physica Sinica,
2001, 50(10): 2038-2043.
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LI HONG-WEI, WANG TAI-HONG. CURRENT TRANSPORT PROPERTIES OF GaAs SCHOTTKY DIODE CONTAINING InAs SELF-ASSEMBLED QUANTUM DOTS. Acta Physica Sinica,
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1998, 47(1): 89-93.
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