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Self-assembled InAs/GaAs quantum dot structures with different cap layers are grown by metal-organic chemical vapor deposition.The structure and optical properties of quantum dots are investigated using atomic force microscopy and photoluminescence.The cap layers sandwiched between quantum dots are composed of a low-temperature layer and a high-temperature layer.The comparative studies on low-temperature cap layer show that In graded InGaAs layer structure improves the uniformity of quantum dots,decreases coalescent islands and enhances photoluminescence intensity.Emission wavelength shifts from 1256.0 nm to 1314.4 nm when the thickness of graded InGaAs low-temperature cap layer increases form 6.8 nm to 12 nm.The research on high-temperature cap layer structure indicates that In graded InGaAs layer can increase photoluminescence intensity.
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Keywords:
- semiconductor quantum dots /
- cap layer /
- graded composition
[1] Huffaker D L,Park G,Zou Z,Shchekin O B,Deppe D G 1998 App.Phys.Lett. 73 2564
[2] K J 2000 J.Vac.Sci.Technol.B 18 1496
[3] Ji H M,Cao Y L,Yang T,Ma W Q,Cao Q,Chen L H 2009 Acta Phys.Sin. 58 1896 (in Chinese) [季海铭、曹玉莲、杨 涛、马文全、曹 青、陈良惠 2009 58 1896]
[4] Caroff P,Paranthoen C,Platz C,Dehaese O,Folliot H,Bertru N,Labbe C,Piron R,Homeyer E,Le Corre A,Loualiche S 2005 App.Phys.Lett. 87 243107
[5] Huang L R,Yu Y,Tian P,Huang D X 2009 Semicond.Sci.Technol. 24 015009
[6] Wang C,Liu Z L,Li T X,Chen P P,Cui H Y,Xiao J,Zhang S,Yang Y,Lu W 2008 Acta Phys.Sin. 57 1155 (in Chinese) [王 茺、刘昭麟、李天信、陈平平、崔昊杨、肖 军、张 曙、杨 宇、陆 卫 2008 55 1155]
[7] Lian G D,Yuan J,Brown L M,Kim G H,itchie D A 1998 App.Phys.Lett. 73 49
[8] Liu H Y,Sellers I R,Badcock T J,Mowbray D J,Skolnick M S,Groom K M,Gutierrez M,Hopkinson M,Ng J S,David J P R,Beanland R 2004 App.Phys.Lett. 85 704
[9] Kong L M,Feng Z C,Wu Z Y,Lu W J 2008 Semcondi.Sci.Tech 23 075044
[10] Sears K,Mokkapati S,Buda M,TanHH,Jagadish C 2006 Proceedings of The SPIE International Symposium on Smart Materials,Nano- and Micro-Smart Systems Adelaide,Australia,2006,6415 641506
[11] Yang T,Tatebayashi J,Nishioka M,Arakawa Y 2006 App.Phys.Lett. 89 081902
[12] Stintz A,Liu G T,Gray A L,Spillers R,Delgado S M,Malloy
[13] Laghumavarapu R B,El-Emawy M,Nuntawong N,Moscho A,Lester L F,Huffaker D L 2007 App.Phys.Lett. 91 243115
[14] Jiang Z W,Wang W X,Gao H C,Li H,He T,Yang C L,Chen H,Zhou J M 2009 Acta Phys.Sin. 58 471 (in Chinese) [蒋中伟、王文新、高汉超、李 辉、何 涛、杨成良、陈 弘、周均铭 2009 58 471]
[15] Liu H Y,Steer M J,Badcock T J,Mowbray D J,Skolnick M S,Navaretti P,Groom K M,Hopkinson M,Hogg R A 2005 App.Phys.Lett. 86 143108
[16] Kim J S,Lee J H,Hong S U,Han W S,Kwack H S,Lee C W,Oh D K 2003 J.App.Phys. 94 6603
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[1] Huffaker D L,Park G,Zou Z,Shchekin O B,Deppe D G 1998 App.Phys.Lett. 73 2564
[2] K J 2000 J.Vac.Sci.Technol.B 18 1496
[3] Ji H M,Cao Y L,Yang T,Ma W Q,Cao Q,Chen L H 2009 Acta Phys.Sin. 58 1896 (in Chinese) [季海铭、曹玉莲、杨 涛、马文全、曹 青、陈良惠 2009 58 1896]
[4] Caroff P,Paranthoen C,Platz C,Dehaese O,Folliot H,Bertru N,Labbe C,Piron R,Homeyer E,Le Corre A,Loualiche S 2005 App.Phys.Lett. 87 243107
[5] Huang L R,Yu Y,Tian P,Huang D X 2009 Semicond.Sci.Technol. 24 015009
[6] Wang C,Liu Z L,Li T X,Chen P P,Cui H Y,Xiao J,Zhang S,Yang Y,Lu W 2008 Acta Phys.Sin. 57 1155 (in Chinese) [王 茺、刘昭麟、李天信、陈平平、崔昊杨、肖 军、张 曙、杨 宇、陆 卫 2008 55 1155]
[7] Lian G D,Yuan J,Brown L M,Kim G H,itchie D A 1998 App.Phys.Lett. 73 49
[8] Liu H Y,Sellers I R,Badcock T J,Mowbray D J,Skolnick M S,Groom K M,Gutierrez M,Hopkinson M,Ng J S,David J P R,Beanland R 2004 App.Phys.Lett. 85 704
[9] Kong L M,Feng Z C,Wu Z Y,Lu W J 2008 Semcondi.Sci.Tech 23 075044
[10] Sears K,Mokkapati S,Buda M,TanHH,Jagadish C 2006 Proceedings of The SPIE International Symposium on Smart Materials,Nano- and Micro-Smart Systems Adelaide,Australia,2006,6415 641506
[11] Yang T,Tatebayashi J,Nishioka M,Arakawa Y 2006 App.Phys.Lett. 89 081902
[12] Stintz A,Liu G T,Gray A L,Spillers R,Delgado S M,Malloy
[13] Laghumavarapu R B,El-Emawy M,Nuntawong N,Moscho A,Lester L F,Huffaker D L 2007 App.Phys.Lett. 91 243115
[14] Jiang Z W,Wang W X,Gao H C,Li H,He T,Yang C L,Chen H,Zhou J M 2009 Acta Phys.Sin. 58 471 (in Chinese) [蒋中伟、王文新、高汉超、李 辉、何 涛、杨成良、陈 弘、周均铭 2009 58 471]
[15] Liu H Y,Steer M J,Badcock T J,Mowbray D J,Skolnick M S,Navaretti P,Groom K M,Hopkinson M,Hogg R A 2005 App.Phys.Lett. 86 143108
[16] Kim J S,Lee J H,Hong S U,Han W S,Kwack H S,Lee C W,Oh D K 2003 J.App.Phys. 94 6603
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