[1] |
Wang Hai-Ling, Wang Ting, Zhang Jian-Jun. Controllable growth of InAs quantum dots on patterned GaAs (001) substrate. Acta Physica Sinica,
2019, 68(11): 117301.
doi: 10.7498/aps.68.20190317
|
[2] |
Shang Xiang-Jun, Ma Ben, Chen Ze-Sheng, Yu Ying, Zha Guo-Wei, Ni Hai-Qiao, Niu Zhi-Chuan. Physics and devices of quanutm light emission from semicoductor self-assembled quantum Dots. Acta Physica Sinica,
2018, 67(22): 227801.
doi: 10.7498/aps.67.20180594
|
[3] |
Zhang Wei, Shi Zhen-Wu, Huo Da-Yun, Guo Xiao-Xiang, Peng Chang-Si. Effects of in-situ surface modification by pulsed laser on InAs/GaAs (001) quantum dot growth. Acta Physica Sinica,
2016, 65(11): 117801.
doi: 10.7498/aps.65.117801
|
[4] |
Yu Xu-Tao, Xu Jin, Zhang Zai-Chen. Routing protocol for wireless ad hoc quantum communication network based on quantum teleportation. Acta Physica Sinica,
2012, 61(22): 220303.
doi: 10.7498/aps.61.220303
|
[5] |
Jiang Zhong-Wei, Wang Wen-Xin, Gao Han-Chao, Li Hui, He Tao, Yang Cheng-Liang, Chen Hong, Zhou Jun-Ming. Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots. Acta Physica Sinica,
2009, 58(1): 471-476.
doi: 10.7498/aps.58.471
|
[6] |
Song Yu-Xin, Yu Zhong-Yuan, Liu Yu-Min. Influences of flux and interruption on InAs/GaAs quantum dot superlattice growth. Acta Physica Sinica,
2008, 57(4): 2399-2403.
doi: 10.7498/aps.57.2399
|
[7] |
Huang Li-Qing, Pan Hua-Qiang, Wang Jun, Tong Hui-Min, Zhu Ke, Ren Guan-Xu, Wang Yong-Chang. Spontaneous formation of ordered Sn nanodot array on porous anodic alumina membrane. Acta Physica Sinica,
2007, 56(11): 6712-6716.
doi: 10.7498/aps.56.6712
|
[8] |
Yu Chen-Hui, Wang Chong, Gong Qian, Zhang Bo, Lu Wei. A piezomodulated reflectance study of InAs/GaAs surface quantum dots. Acta Physica Sinica,
2006, 55(9): 4934-4939.
doi: 10.7498/aps.55.4934
|
[9] |
Tang Nai-Yun, Chen Xiao-Shuang, Lu Wei. Hydrostatic pressure coefficients of the photoluminescence of InAs/GaAs quantum dots. Acta Physica Sinica,
2005, 54(5): 2277-2281.
doi: 10.7498/aps.54.2277
|
[10] |
Zhang Yong-Ju, Yu Sen-Jiang. Self-organization of ordered surface patterns in nearly free sustained Al films. Acta Physica Sinica,
2005, 54(10): 4867-4873.
doi: 10.7498/aps.54.4867
|
[11] |
Dong Qing-Rui, Niu Zhi-Chuan. Excitonic energy of vertically stacked self-assmbled InAs quantum dots. Acta Physica Sinica,
2005, 54(4): 1794-1798.
doi: 10.7498/aps.54.1794
|
[12] |
Peng Ying-Cai, M. Ikeda, S. Miyazaki. Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor deposition. Acta Physica Sinica,
2003, 52(12): 3108-3113.
doi: 10.7498/aps.52.3108
|
[13] |
Zhao Ji-Gang, Shao Bin, Wang Tai-Hong. . Acta Physica Sinica,
2002, 51(6): 1355-1359.
doi: 10.7498/aps.51.1355
|
[14] |
Zhang Yong-Peng, Yan Long, Xie Si-Shen, Pang Shi-Jin, Gao Hong-Jun. . Acta Physica Sinica,
2002, 51(2): 296-299.
doi: 10.7498/aps.51.296
|
[15] |
. . Acta Physica Sinica,
2002, 51(2): 310-314.
doi: 10.7498/aps.51.310
|
[16] |
LI HONG-WEI, WANG TAI-HONG. CURRENT TRANSPORT PROPERTIES OF GaAs SCHOTTKY DIODE CONTAINING InAs SELF-ASSEMBLED QUANTUM DOTS. Acta Physica Sinica,
2001, 50(2): 262-267.
doi: 10.7498/aps.50.262
|
[17] |
WANG XIAO-DONG, LIU HUI-YUN, NIU ZHI-CHUAN, FENG SONG-LIN. STUDY OF SELF-ASSEMBLED InAs QUANTUM DOT STRUCTURE COVERED BY InxGa1-xAs(0≤x≤0.3) CAPPING LAYER. Acta Physica Sinica,
2000, 49(11): 2230-2234.
doi: 10.7498/aps.49.2230
|
[18] |
JIANG WEI-HONG, XU HUAI-ZHE, GONG QIAN, XU BO, WANG JI-ZHENG, ZHOU WEI, LIANG JI-BEN, WANG ZHAN-GUO. STRUCTURAL AND OPTICAL PROPERTIES OF SELF-ASSEMBLED InAs QUANTUM DOTS GROWN ON GaAs(311) A SUBSTRATE. Acta Physica Sinica,
1999, 48(8): 1541-1546.
doi: 10.7498/aps.48.1541
|
[19] |
SI JUN-JIE, YANG QIN-QING, TENG DA, WANG HONG-JIE, YU JIN-ZHONG, WANG QI-MING, GUO LI-WEI, ZHOU JUN-MING. MORPHOLOGY AND PHOTOLUMINESCENCE OF GeSi SELF-ASSEMBLED QUANTUM DOT ON Si(113). Acta Physica Sinica,
1999, 48(9): 1745-1750.
doi: 10.7498/aps.48.1745
|
[20] |
LV ZHEN-DONG, LI QING, XU JI-ZONG, ZHENG BAO-ZHEN, XU ZHONG-YING, GE WEI-KUN. EXCITON DYNAMICS IN SELF-ORGANIZED InAs/GaAs QUANTUM DOTS. Acta Physica Sinica,
1999, 48(4): 744-750.
doi: 10.7498/aps.48.744
|