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- CHENG WEN-QING,
- CAI LI-HONG,
- CHEN HONG,
- ZHOU JUN-MING,
- XIE XIAO-GANG,
- MEI XIAO-BING,
- HUANG YI,
- ZHAO TIE-NAN,
- ZHU GE
-
1.
中国科学院物理研究所,北京100080
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[1] Hu Chang-Cheng, Ye Hui-Qi, Wang Gang, Liu Bao-Li. Spatiotemporal dynamics of photogenerated carriers in GaAs/AlGaAs multiple quantum wells. Acta Physica Sinica, 2011, 60(1): 017803. doi: 10.7498/aps.60.017803 [2] Wang Xiu-Ping, Yang Xiao-Hong, Han Qin, Ju Yan-Ling, Du Yun, Zhu Bin, Wang Jie, Ni Hai-Qiao, He Ji-Fang, Wang Guo-Wei, Niu Zhi-Chuan. Preparation and photoluminescence study of patterned substrate quantum wires. Acta Physica Sinica, 2011, 60(2): 020703. doi: 10.7498/aps.60.020703 [3] Wang Xiao, Pan An-Lian, Liu Dan, Bai Yong-Qiang, Zhang Zhao-Hui, Zou Bing-Suo, Zhu Xing. Near-field detected photoluminescence spectra of CdS0.65Se0.35 nanoribbon at room temperature. Acta Physica Sinica, 2007, 56(11): 6352-6357. doi: 10.7498/aps.56.6352 [4] Xin Ping, Sun Cheng-Wei, Qin Fu-Wen, Wen Sheng-Ping, Zhang Qing-Yu. Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering. Acta Physica Sinica, 2007, 56(2): 1082-1087. doi: 10.7498/aps.56.1082 [5] Tan Na, Duan Shu-Qing, Zhang Qing-Yu. Influence of annealing temperature on the luminescence of Er/Yb co-doped Al2O3 films. Acta Physica Sinica, 2005, 54(9): 4433-4438. doi: 10.7498/aps.54.4433 [6] Shao Jia-Ping, Hu Hui, Guo Wen-Ping, Wang Lai, Luo Yi, Sun Chang-Zheng, Hao Zhi-Biao. Study on electroluminescence spectra of InxGa1－xN/GaN-MQWs materials with high indium contents. Acta Physica Sinica, 2005, 54(8): 3905-3909. doi: 10.7498/aps.54.3905 [7] Yuan Xian-Zhang, Miao Zhong-Lin. In-situ photo-modulated reflectance study on the interface of Al and GaAs surface quantum well. Acta Physica Sinica, 2004, 53(10): 3521-3524. doi: 10.7498/aps.53.3521 [8] Chen Gui-Bin, Lu Wei, Liao Zhong-Lin, Li Zhi-Feng, Chai Wei-Ying, Shen Xue-Chu, Chen Chang-Ming, Zhu De-Zhang, Hu Jun, Li Ming-Qian. . Acta Physica Sinica, 2002, 51(3): 659-662. doi: 10.7498/aps.51.659 [9] MIU ZHONG-LIN, CHEN PING-PING, LU WEI, XU WEN-LAN, LI ZHI-FENG, CAI WEI-YING. . Acta Physica Sinica, 2001, 50(1): 111-115. doi: 10.7498/aps.50.111 [10] LI ZHI-FENG, LU WEI, LIU XING-QUAN, SHEN XUE-CHU, Y.FU, M.WILLANDER, H.H.TAN, C. JAGADISH. THE MICRO-PHOTOLUMINESCENCE OF A SINGLE V-GROOVE GaAs/AlGaAs QUANTUM WIRE. Acta Physica Sinica, 2000, 49(9): 1809-1813. doi: 10.7498/aps.49.1809 [11] DING GUO-QING. INVESTIGATION OF TENSILE-STRAINED,LONG WAVELENGTH In1-xGaxAsyP1-y/InP WITH QUANTUM-WELL STRUCTURE BY PHTOLUMINESCENCE MEASUREMENTS. Acta Physica Sinica, 1998, 47(9): 1564-1570. doi: 10.7498/aps.47.1564 [12] CHENG WEN-QIN, CAI LI-HONG, XIE XIAO-GANG, WANG WEN-XIN, HU QIANG, ZHOU JUN-MING. PHOTOLUMINESCENCE SPECTRA OF AlyGa1-yAs/AlxGa1-xAs QUANTUM WELL FOR LASERS. Acta Physica Sinica, 1996, 45(2): 304-306. doi: 10.7498/aps.45.304 [13] ZHU WEN-ZHANG, SHEN QI-HUA. PHOTOVOLTAGE SPECTROSCOPY STUDY OF GaAs/AIGaAs MULTIPLE QUANTUM WELLS. Acta Physica Sinica, 1996, 45(2): 258-264. doi: 10.7498/aps.45.258 [14] MAO HUI-BING, LU WEI, MA CHAO-HUI, ZHANG JIA-MING, JIANG SHAN, SHEN XUE-CHU. . Acta Physica Sinica, 1995, 44(10): 1588-1594. doi: 10.7498/aps.44.1588 [15] CHENG WEN-QIN, LIU SHUANG, ZHOU JUN-MING, LIU YU-LONG, ZHU KE. PHOTOLUMINESCENCE OF (110) MODULATION-DOPED GaAs-AlGaAs HETEROSTRUCTURES. Acta Physica Sinica, 1993, 42(9): 1529-1531. doi: 10.7498/aps.42.1529 [16] CHENG WEN-QIN, MEI XIAO-BING, ZHOU JUN-MING, LIU YU-LONG, ZHU KE. PHOTOLUMINESCENCE OF Be-DOPED-GaAs QUANTUM WELLS. Acta Physica Sinica, 1993, 42(5): 864-866. doi: 10.7498/aps.42.864 [17] CHI JIAN-GANG, ZHAO WEN-QIN, LI AI-ZHEN. PHOTOREFLECTANCE SPECTROSCOPY OF MBE GaAs1-x Sbx/GaAs STRAINED LAYER QUANTUM WELL. Acta Physica Sinica, 1989, 38(10): 1710-1716. doi: 10.7498/aps.38.1710 [18] JIA WEI-YI, LU ZHI-DONG, HUANG YI, ZHOU JUN-MING, LI YUNG-KANG, WANG YAN-YUN. PHOTOLUMINESCENCE DIAGNOSIS OF GaAs/GaAlAs MULTIPLE QUANTUM WELLS. Acta Physica Sinica, 1988, 37(6): 906-915. doi: 10.7498/aps.37.906 [19] ZHOU JUN-MING, HUANG YI, MENG QING-HUI, CHENG WEN-QIN, WU YONG-SHENG, LI YONG-KANG, YANG ZHONG-XING. GROWTH AND TRANSPORT PROPERTIER OF MODULATION DOPED GaAs/AlGaAs HETEROSTRUCTURES. Acta Physica Sinica, 1986, 35(2): 269-273. doi: 10.7498/aps.35.269 [20] XU JUN-YING, CHEN LIANG-HUI, GONG JI-SHU, XU ZHONG-YING, ZHUANG WEI-HUA, LI YU-ZHANG, XU JI-ZONG, WU LING-XI. THE PHOTOLUMINESCENCE SPECTRA OF N+, Zn+ IMPLANTED GaAs1-xPx AT 1.8-4.2 K. Acta Physica Sinica, 1984, 33(6): 833-839. doi: 10.7498/aps.33.833
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Publishing process
- Accepted Date:
19 January 1994
- Published Online:
20 January 1995
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