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Zhao Na-Na, Wang Jia-Min, Yuan Zhi-Hao, Cui Zhen, Ren Cong-Cong. First principles study of electronic and optical properties of S-type heterostructures MoSi2N4/GeC. Acta Physica Sinica,
2023, 72(19): 196102.
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Cai Wen-Bo, Yang Yang, Li Zhi-Qing. Preparation and electrical transport properties of TiO thin films. Acta Physica Sinica,
2023, 72(22): 227302.
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He Xin, Li Xin-Yan, Li Jing-Hui, Zhang Zhen-Hua. Magneto-electronic properties and manipulation effects of Fe-adsorbed Sb/WS2 heterostructure. Acta Physica Sinica,
2022, 71(21): 218503.
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Jia Yan-Wei, He Jian, He Meng, Zhu Xiao-Hua, Zhao Shang-Man, Liu Jin-Long, Chen Liang-Xian, Wei Jun-Jun, Li Cheng-Ming. Synthesis of h-BN/diamond heterojunctions and its electrical characteristics. Acta Physica Sinica,
2022, 71(22): 228101.
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Yang Na-Na, Chen Xuan, Wang Yao-Jin. Magnetoelectric heterostructure and device application. Acta Physica Sinica,
2018, 67(15): 157508.
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Huang Zheng, Long Chao-Yun, Zhou Xun, Xu Ming. Study on tunneling magnetoresistance effects in parabolic well magnetic tunneling junction with double barriers. Acta Physica Sinica,
2016, 65(15): 157301.
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Liu Fu-Ti, Zhang Shu-Hua, Cheng Yan, Chen Xiang-Rong, Cheng Xiao-Hong. Theoretical calculation of electron transport properties of atomic chains of (GaAs)n (n=1-4). Acta Physica Sinica,
2016, 65(10): 106201.
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Xue Yuan, Gao Chao-Jun, Gu Jin-Hua, Feng Ya-Yang, Yang Shi-E, Lu Jing-Xiao, Huang Qiang, Feng Zhi-Qiang. Study on the properties and optical emission spectroscopy of the intrinsic silicon thin film in silicon heterojunction solar cells. Acta Physica Sinica,
2013, 62(19): 197301.
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Lin Qi, Chen Yu-Hang, Wu Jian-Bao, Kong Zong-Min. Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons. Acta Physica Sinica,
2011, 60(9): 097103.
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Shu Qiang, Shu Yong-Chun, Zhang Guan-Jie, Liu Ru-Bin, Yao Jiang-Hong, Pi Biao, Xing Xiao-Dong, Lin Yao-Wang, Xu Jing-Jun, Wang Zhan-Guo. Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure. Acta Physica Sinica,
2006, 55(3): 1379-1383.
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Yao Wei, Qiu Zhi-Jun, Gui Yong-Sheng, Zheng Ze-Wei, Lü Jie, Tang Ning, Shen Bo, Chu Jun-Hao. Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure. Acta Physica Sinica,
2005, 54(5): 2247-2251.
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2004, 53(2): 596-600.
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ZHOU YU-GANG, SHEN BO, LIU JIE, ZHOU HUI-MEI, YU HUI-QIANG, ZHANG RONG, SHI YI, ZHENG YOU-DOU. EXTRACTION OF POLARIZATION-INDUCED CHARGE DENSITY INMODULATION-DOPED AlxGa1-xN/GaN HETEROSTRUCTURETHROUGH THE SIMULATION OF THE SCHOTTKY CAPACITANCE-VOLTAGE CHARACTERISTICS. Acta Physica Sinica,
2001, 50(9): 1774-1778.
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LI GUO-HUI, ZHOU SHI-PING, XU DE-MING. RESEARCH ON THE DYNAMICAL BEHAVIORS OF GaAs/AlGaAs HETEROSTRUCTURES. Acta Physica Sinica,
2001, 50(8): 1567-1573.
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2000, 49(12): 2466-2471.
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1998, 47(3): 494-501.
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1995, 44(1): 142-144.
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1994, 43(2): 282-288.
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1993, 42(9): 1529-1531.
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1987, 36(3): 363-367.
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