[1] |
Wang Hai-Bo, Luo Zhen-Lin, Liu Qing-Qing, Jin Chang-Qing, Gao Chen, Zhang Li. Resonant X-ray diffraction studies on modulation structures of high temperature superconducting sample Sr2CuO3.4. Acta Physica Sinica,
2019, 68(18): 187401.
doi: 10.7498/aps.68.20190494
|
[2] |
Zhang Jin-Shuai, Huang Qiu-Shi, Jiang Li, Qi Run-Ze, Yang Yang, Wang Feng-Li, Zhang Zhong, Wang Zhan-Shan. Stress and structure properties of X-ray W/Si multilayer under low temperature annealing. Acta Physica Sinica,
2016, 65(8): 086101.
doi: 10.7498/aps.65.086101
|
[3] |
Li Hong-Tao, Luo Yi, Xi Guang-Yi, Wang Lai, Jiang Yang, Zhao Wei, Han Yan-Jun, Hao Zhi-Biao, Sun Chang-Zheng. Thickness measurement of GaN films by X-ray diffraction. Acta Physica Sinica,
2008, 57(11): 7119-7125.
doi: 10.7498/aps.57.7119
|
[4] |
Wang Zhen-Ning, Jiang Mei-Fu, Ning Zhao-Yuan, Zhu Li. Structure and photoluminescence of Zn2GeO4 polycrystalline films prepared by radio-frequency magnetron sputtering. Acta Physica Sinica,
2008, 57(10): 6507-6512.
doi: 10.7498/aps.57.6507
|
[5] |
Xue Jian-Ming, S. Ninomiya, N. Imanishi. Study on the sputtering mechanism of SiO2 irradiated with MeV Si ions. Acta Physica Sinica,
2004, 53(5): 1445-1449.
doi: 10.7498/aps.53.1445
|
[6] |
. . Acta Physica Sinica,
2002, 51(4): 882-888.
doi: 10.7498/aps.51.882
|
[7] |
LIU FENG-ZHEN, ZHU MEI-FANG, LIU TAO, LI BING-CHENG. THE TRANSITION FROM Eu3+TO Eu2+ IN SiO2(Eu) THIN FILMS PREPARED BY ION IMPLANTATION AND CO-SPUTTERING. Acta Physica Sinica,
2001, 50(3): 532-535.
doi: 10.7498/aps.50.532
|
[8] |
XU ZHENG, ZHAO XIAO-RU, WU WEN-BIN, SUN XUE-FENG, WANG LIANG-BIN, ZHOU GUI-EN, LI XIAO-GUANG, ZHANG YU-HENG. X-RAY DIFFRACTION STUDY OF THE MODULATED STRUCTURE IN Bi2Sr2CaCu2Oy SINGLE CRYSTALS. Acta Physica Sinica,
1996, 45(9): 1578-1585.
doi: 10.7498/aps.45.1578
|
[9] |
Xu Qiang, Wang Jian-Bao, Yuan Jian, Lu Fang, Sun Heng-Hui. . Acta Physica Sinica,
1995, 44(3): 432-438.
doi: 10.7498/aps.44.432
|
[10] |
WANG JIAN-PING, LUO HE-LIE. MECHANISM OF THE COERCIVITY FOR THE GRANULAR SOLID. Acta Physica Sinica,
1995, 44(12): 2000-2006.
doi: 10.7498/aps.44.2000
|
[11] |
WANG WEI-HUA, BAI HAI-YANG, ZHANG YUN, CHEN HONG, WANG WEN-KUI. STUDY THE DIFFUSION MECHANISM OF Ni IN AMORPHOUS Si BY X-RAY DIFFRACTION. Acta Physica Sinica,
1993, 42(9): 1505-1509.
doi: 10.7498/aps.42.1505
|
[12] |
LI CHAO-RONG, MAI ZHEN-HONG, P. D. HATTON, C. H. DU. X-RAY TRIPLE AXIS SCATTERING STUDIES OF YBa2Cu3Oy SUPERCONDUCTING THIN FILM. Acta Physica Sinica,
1993, 42(9): 1479-1484.
doi: 10.7498/aps.42.1479
|
[13] |
TIAN LIANG-GUANG, ZHU NAN-CHANG, CHEN JING-YI, LI RUN-SHEN, XU SHUN-SHENG, ZHOU GUO-LIANG. X-RAY DOUBLE-CRYSTAL DIFFRACTION STUDY OF HIGH QUALITY GexSi1-x/Si STRAINED LAYER SUPERLATTICE. Acta Physica Sinica,
1991, 40(3): 441-448.
doi: 10.7498/aps.40.441
|
[14] |
MAI ZHEN-HONG, GUI SHU-FAN, WANG CHAO-YING, WU LAN-SHENG. STUDY OF AlGaAs/GaAs WAVEGUIDE STRUCTURE BY X-RAY DOUBLE CRYSTAL DIFFRACTION. Acta Physica Sinica,
1991, 40(6): 969-977.
doi: 10.7498/aps.40.969
|
[15] |
ZHANG JIAN-ZHONG, CAO YAN-NI. SIMULATION STUDY OF DIVERGENT BEAM X-RAY DIFFRACTION BY CRYSTALS. Acta Physica Sinica,
1990, 39(1): 124-128.
doi: 10.7498/aps.39.124
|
[16] |
LU JIANG, WU ZI-QIN. A CROSS-SECTIONED TEM STUDY OF Si-W/Si/SiO2/Si(100). Acta Physica Sinica,
1989, 38(6): 981-986.
doi: 10.7498/aps.38.981
|
[17] |
MA DE-LU, SHANG DE-YING, YU JIN-HUA. XRD STUDY OF N2+ IMPLANTED Si. Acta Physica Sinica,
1989, 38(4): 579-585.
doi: 10.7498/aps.38.579
|
[18] |
JIANG XIAO-MING, JIANG ZUI-MIN, LIU WEN-HAN, WU ZI-QIN. THE EFFECT OF ANNEALING ON THE X-RAY DIFFRACTION OF W/C PERIODIC MULTILAYERS. Acta Physica Sinica,
1988, 37(11): 1893-1899.
doi: 10.7498/aps.37.1893
|
[19] |
QI MING, LUO JIN-SHENG. A STUDY ON THE PROPERTIES OF SiO2 THIN FILM THERMALLY NITRIDED IN AMMONIA AND ITS INTERFACE. Acta Physica Sinica,
1988, 37(10): 1600-1606.
doi: 10.7498/aps.37.1600
|
[20] |
LI SI-YUAN, ZHANG TONG-JUN, WANG IU-ZHEN, LI SHOU-SONG, YIN ZHI-PING. ANNEALING PROPERTIES OF GOLD-DOPED AND UNDOPED Si-SiO2 INTERFACES IN DRY OXYGEN. Acta Physica Sinica,
1985, 34(6): 715-724.
doi: 10.7498/aps.34.715
|