| [1] |
Xiao You-Peng, Wang Huai-Ping, Li Gang-Long. Numerical simulation of graphene/Ag2ZnSnSe4 induced p-n junction solar cell. Acta Physica Sinica,
2021, 70(1): 018801.
doi: 10.7498/aps.70.20201194
|
| [2] |
Wang Shun-Li, Wang Ya-Chao, Guo Dao-You, Li Chao-Rong, Liu Ai-Ping. NiO/GaN p-n junction ultraviolet photodetector and self-powered technology. Acta Physica Sinica,
2021, 70(12): 128502.
doi: 10.7498/aps.70.20210154
|
| [3] |
Huangfu Xia-Hong, Liu Shuang-Fei, Xiao Jia-Jun, Zhang Bei, Peng Xin-Cun. Modulating infrared optoelectronic performance of GaInAsSb p-n junction by nanophotonic structure. Acta Physica Sinica,
2021, 70(11): 118501.
doi: 10.7498/aps.70.20201829
|
| [4] |
Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun, Zhao Ming-Jie. Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method. Acta Physica Sinica,
2019, 68(17): 178501.
doi: 10.7498/aps.68.20190699
|
| [5] |
Liu Jie, Wang Lu, Sun Ling, Wang Wen-Qi, Wu Hai-Yan, Jiang Yang, Ma Zi-Guang, Wang Wen-Xin, Jia Hai-Qiang, Chen Hong. Anomalous light-to-electricity conversion of low dimensional semiconductor in p-n junction and interband transition quantum well infrared detector. Acta Physica Sinica,
2018, 67(12): 128101.
doi: 10.7498/aps.67.20180588
|
| [6] |
Zhang Zeng-Xing, Li Dong. Novel p-n junctions based on ambipolar two-dimensional crystals. Acta Physica Sinica,
2017, 66(21): 217302.
doi: 10.7498/aps.66.217302
|
| [7] |
Ma Li, Wang Dong-Fang, Gao Yong, Zhang Ru-Liang. Effects of p and n pillar widths on electrical characteristicsof super junction SiGe power diodes. Acta Physica Sinica,
2011, 60(4): 047303.
doi: 10.7498/aps.60.047303
|
| [8] |
Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie. A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica,
2011, 60(9): 098107.
doi: 10.7498/aps.60.098107
|
| [9] |
Ma Li, Gao Yong. Semi-super junction SiGe high voltage fast and soft recovery switching diodes. Acta Physica Sinica,
2009, 58(1): 529-535.
doi: 10.7498/aps.58.529
|
| [10] |
Halimulati, Abai, Baishan, Aimaiti. Boundary alternating current characteristics of an ideal p-n junction diode. Acta Physica Sinica,
2008, 57(2): 1161-1165.
doi: 10.7498/aps.57.1161
|
| [11] |
PENG YING-CAI, XU GANG-YI, HE YU-LIANG, LIU MING, LI YUE-XIA. CARRIER TRANSPORT PROPERTIES OF THE (n)nc-Si:H/(p)c-Si HETEROJUNCTION. Acta Physica Sinica,
2000, 49(12): 2466-2471.
doi: 10.7498/aps.49.2466
|
| [12] |
FENG XI-QI, LUO BIN-ZHANG. THE CHARACTERISTICS OF EPITAXIAL p-n JUNCTIONS GROWN BY METHOD OF SILICON CARBIDE CRYSTALS SUBLIMATION. Acta Physica Sinica,
1980, 29(1): 1-10.
doi: 10.7498/aps.29.1
|
| [13] |
. ВЛИЯНИЕ НЕОБЕДНЕННЫХ НОСИТЕЛЕЙ ТОКА НА ОБРАТНУЮ ХАРАКТЕРИСТИКУ Р-И ПЕРЕХОДА. Acta Physica Sinica,
1966, 22(7): 781-797.
doi: 10.7498/aps.22.781
|
| [14] |
TSCHEN DSIN-GUANG. SCHROTRAUSCHEN UND THERMISCHES RAUSCHEN IN EINER P-N-FLACHENDIODE. Acta Physica Sinica,
1965, 21(2): 383-389.
doi: 10.7498/aps.21.383
|
| [15] |
. . Acta Physica Sinica,
1965, 21(5): 1077-1079.
doi: 10.7498/aps.21.1077
|
| [16] |
SHAW NAN, LIU YI-HUAN. X-RAY MEASUREMENT OF THE THERMAL EXPANSION OF GERMANIUM, SILICON, INDIUM ANTIMONIDE AND GALLIUM ARSENIDE. Acta Physica Sinica,
1964, 20(8): 699-704.
doi: 10.7498/aps.20.699
|
| [17] |
. . Acta Physica Sinica,
1964, 20(3): 281-284.
doi: 10.7498/aps.20.281
|
| [18] |
YUAN KONG, CHEN NING-CHIANG. PRESSURE DEPENDENCE OF SOME TUNNELING PARAMETERS IN NARROW GALLIUM ARSENIDE P-N JUNCTIONS. Acta Physica Sinica,
1964, 20(8): 806-813.
doi: 10.7498/aps.20.806
|
| [19] |
TANG PU-SHAN, HUO MING-HSIA, CHEN TSO-YU, WANG CHU. THE DIFFUSION LENGTH OF MINORITY CARRIERS IN N-TYPE SILICON MEASURED WITH A SURFACE BARRIER DETECTOR. Acta Physica Sinica,
1963, 19(7): 448-455.
doi: 10.7498/aps.19.448
|
| [20] |
WANG SHOU-WU. ON THE THEORY OF INJECTION OF MINORITY CARRIERS IN p-n ALLOY JUNCTIONS. Acta Physica Sinica,
1958, 14(1): 82-94.
doi: 10.7498/aps.14.82
|
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