基于双极性二维晶体的新型p-n结

张增星; 李东

doi:10.7498/aps.66.217302

摘要

二维晶体的特殊结构和新奇物理性能为构建新型纳米结构和器件，实现半导体领域的突破性进展提供了可能.本文首先介绍了双极性二维晶体的基本物理性能和相关范德瓦耳斯异质结的制备方法.在此基础上，主要综述了双极性二维晶体在新型电场调制二维晶体p-n结与异质p-n结以及非易失性可存储二维晶体p-n结等方面的应用、相关结构设计、电子和光电子等物理性能.然后进一步介绍了该类新型p-n结在逻辑整流电路、场效应光电子晶体管、多模式非易失性存储器、整流存储器、光电子存储器、光伏器件等方面的潜在应用.最后总结展望了该种新型p-n结在相关领域的可能发展方向.

关键词:

Abstract

Two-dimensional (2D) materials have a unique crystal structure and excellent properties, which renders it possible to be used to construct novel artificial nanostructures and design novel nanodevices, thereby achieving a breakthrough in the semiconductor field. In this review paper, the basic behaviors of the ambipolar 2D crystals and the fabrication method of the van der Waals heterostructures are first introduced. We mainly summarize the applications of the ambipolar 2D crystals for novel electrical-field-tunable 2D p-n junctions and p-n heterojunctions (field-effect p-n heterojunction transistor) and non-volatile storable p-n junctions, and other aspects of the relevant structural design, electronic and optoelectronic properties. Then we further introduce their potential applications of logic rectifiers, field-effect optoelectronic transistors, multi-mode non-volatile memories, rectifier memories, optoelectronic memories, photovoltaics, etc. Finally, we provide an outlook of the future possible studies of this new type of p-n junctions in the relevant fields.

Keywords:

作者及机构信息

张增星,
李东

1.
同济大学物理科学与工程学院, 上海市特殊人工微结构材料与技术重点实验室, 上海 200092

通信作者: 张增星, zhangzx@tongji.edu.cn

基金项目: 上海市自然科学基金（批准号：16ZR1439400，17ZR1447700）资助的课题.

Authors and contacts

1.
Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China

Corresponding author: Zhang Zeng-Xing, zhangzx@tongji.edu.cn

Funds: Project supported by the Natural Science Foundation of Shanghai, China (Grant Nos. 16ZR1439400, 17ZR1447700).

参考文献

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施引文献

[1]	Ferrari A C, Bonaccorso F, Fal'ko V, Novoselov K S, Roche S, Boggild P, et al. 2015 Nanoscale 7 4598
[2]	Castro Neto A H, Guinea F, Peres N M R, Novoselov K S, Geim A K 2009 Rev. Mod. Phys. 81 109
[3]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nano. 6 147
[4]	Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V, Geim A K 2005 Proc. Natl. Acad. Sci. USA 102 10451
[5]	Liu H, Neal A T, Zhu Z, Luo Z, Xu X F, Tomanek D, Ye P D D 2014 ACS Nano 8 4033
[6]	Li L, Yu Y, Ye G J, Ge Q, Ou X, Wu H, Feng D, Chen X H, Zhang Y 2014 Nat. Nano. 9 372
[7]	Feng B, Ding Z, Meng S, Yao Y, He X, Cheng P, Chen L, Wu K 2012 Nano Lett. 12 3507
[8]	Tao L, Cinquanta E, Chiappe D, Grazianetti C, Fanciulli M, Dubey M, Molle A, Akinwande D 2015 Nat. Nano. 10 227
[9]	L R, Robinson J A, Schaak R E, Sun D, Sun Y, Mallouk T E, Terrones M 2015 Acc. Chem. Res. 48 56
[10]	Xu M, Liang T, Shi M, Chen H 2013 Chem. Rev. 113 3766
[11]	Mas-Balleste R, Gomez-Navarro C, Gomez-Herrero J, Zamora F 2011 Nanoscale 3 20
[12]	Geim A K, Grigorieva I V 2013 Nature 499 419
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[15]	Jariwala D, Marks T J, Hersam M C 2017 Nat. Mater. 16 170
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[45]	Pospischil A, Furchi M M, Mueller T 2014 Nat. Nano. 9 257
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[50]	Li D, Wang B, Chen M, Zhou J, Zhang Z 2017 Small 13 1603726
[51]	Chen P, Zhang T T, Zhang J, Xiang J, Yu H, Wu S, Lu X, Wang G, Wen F, Liu Z, Yang R, Shi D, Zhang G 2016 Nanoscale 8 3254
[52]	Li D, Chen M, Sun Z, Yu P, Liu Z, Ajayan P M, Zhang Z 2017 Nat. Nano. 12 901
[53]	Jariwala D, Sangwan V K, Wu C C, Prabhumirashi P L, Geier M L, Marks T J, Lauhon L J, Hersam M C 2013 Proc. Natl. Acad. Sci. USA 110 18076
[54]	Zhang E Z, Wang W Y, Zhang C, Jin Y B, Zhu G D, Sun Q Q, Zhang D W, Zhou P, Xiu F X 2015 ACS Nano 9 612
[55]	Myung S, Park J, Lee H, Kim K S, Hong S 2010 Adv. Mater. 22 2045
[56]	Bertolazzi S, Krasnozhon D, Kis A 2013 ACS Nano 7 3246

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