| [1] |
Shang Ji-Hua, Yang Xin-Yu, Sun Da-Peng, Zhang Jiu-Xing. Improvement of barium tungsten cathode and investigation of thermionic emission performance. Acta Physica Sinica,
2022, 71(4): 047901.
doi: 10.7498/aps.71.20211684
|
| [2] |
. Improvement of barium tungsten cathode and investigation of thermionic emission performance. Acta Physica Sinica,
2021, (): .
doi: 10.7498/aps.70.20211684
|
| [3] |
Zhang Meng, Yao Ruo-He, Liu Yu-Rong. A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2020, 69(5): 057101.
doi: 10.7498/aps.69.20191512
|
| [4] |
Zhang Meng, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei. Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2020, 69(17): 177102.
doi: 10.7498/aps.69.20200497
|
| [5] |
Liu Hu-Lin, Wang Xing, Tian Jin-Shou, Sai Xiao-Feng, Wei Yong-Lin, Wen Wen-Long, Wang Jun-Feng, Xu Xiang-Yan, Wang Chao, Lu Yu, He Kai, Chen Ping, Xin Li-Wei. High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection. Acta Physica Sinica,
2018, 67(1): 014209.
doi: 10.7498/aps.67.20171729
|
| [6] |
Zhang Fei-Peng, Zhang Jing-Wen, Zhang Jiu-Xing, Yang Xin-Yu, Lu Qing-Mei, Zhang Xin. Effects of Sr doping on electronic and thermoelectrical transport properties of CaMnO3 based oxide. Acta Physica Sinica,
2017, 66(24): 247202.
doi: 10.7498/aps.66.247202
|
| [7] |
Zhang Jing-Shui, Kong Ling-Qin, Dong Li-Quan, Liu Ming, Zuo Jian, Zhang Cun-Lin, Zhao Yue-Jin. Diffusion part in terahertz complementary metal oxide semiconductor transistor detector model. Acta Physica Sinica,
2017, 66(12): 127302.
doi: 10.7498/aps.66.127302
|
| [8] |
Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Wang Guan-Yu. Charge model of strained Si NMOSFET. Acta Physica Sinica,
2014, 63(1): 017101.
doi: 10.7498/aps.63.017101
|
| [9] |
Zhang Min, Wang Xiao-Xia, Luo Ji-Run, Liao Xian-Heng. Preparation and emission characteristic study of plasma-sprayed scandia-doped oxide cathode. Acta Physica Sinica,
2012, 61(7): 077901.
doi: 10.7498/aps.61.077901
|
| [10] |
Cao Lei, Liu Hong-Xia, Wang Guan-Yu. Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET. Acta Physica Sinica,
2012, 61(1): 017105.
doi: 10.7498/aps.61.017105
|
| [11] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang. A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica,
2012, 61(10): 107803.
doi: 10.7498/aps.61.107803
|
| [12] |
Lu Hong-Yan, Chen San, Liu Bao-Tong. Theoretical research on two gaps in cuprate superconductors:an electronic Raman scattering study. Acta Physica Sinica,
2011, 60(3): 037402.
doi: 10.7498/aps.60.037402
|
| [13] |
Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming. Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica,
2011, 60(1): 017202.
doi: 10.7498/aps.60.017202
|
| [14] |
He Bao-Ping, Yao Zhi-Bin. Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment. Acta Physica Sinica,
2010, 59(3): 1985-1990.
doi: 10.7498/aps.59.1985
|
| [15] |
Bi Zhi-Wei, Feng Qian, Hao Yue, Yue Yuan-Zheng, Zhang Zhong-Fen, Mao Wei, Yang Li-Yuan, Hu Gui-Zhou. Effect of Al2O3 dielectric layer thickness on the AlGaN/GaN metal-oxide-semiconductor higher-electron-mobility transistor characteristics. Acta Physica Sinica,
2009, 58(10): 7211-7215.
doi: 10.7498/aps.58.7211
|
| [16] |
Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua. Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise. Acta Physica Sinica,
2008, 57(8): 5205-5211.
doi: 10.7498/aps.57.5205
|
| [17] |
Yuan Xiao-Hui, Li Yu-Tong, Xu Miao-Hua, Zheng Zhi-Yuan, Liang Wen-Xi, Yu Quan-Zhi, Zhang Yi, Wang Zhao-Hua, Ling Wei-Jun, Wei Zhi-Yi, Zhao Wei, Zhang Jie. Influence of laser incidence angle on hot electrons generated in the interaction of ultrashort intense laser pulses with foil target. Acta Physica Sinica,
2006, 55(11): 5899-5904.
doi: 10.7498/aps.55.5899
|
| [18] |
WANG JIAN-PING, XU NA-JUN, ZHANG TING-QING, TANG HUA-LIAN, LIU JIA-LU, LIU CHUAN -YANG, YAO YU-JUAN, PENG HONG-LUN, HE BAO-PING, ZHANG ZHENG-XUAN. TEMPERATURE EFFECTS OF γ-IRRADIATED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRAN SISTOR. Acta Physica Sinica,
2000, 49(7): 1331-1334.
doi: 10.7498/aps.49.1331
|
| [19] |
ZHANG EN-QIU. ON THE THEORY OF THERMIONIC EMISSION (Ⅲ)——A MODEL OF DYNAMICAL SURFACE EMISSION CENTERS. Acta Physica Sinica,
1976, 25(1): 23-30.
doi: 10.7498/aps.25.23
|
| [20] |
ZHANG EN-QIU. HEORY OF THERMIONIC EMISSION (II)——ON THE MONOATOMIC LAYER AND DIPOLE THEORY. Acta Physica Sinica,
1974, 23(5): 53-63.
doi: 10.7498/aps.23.53
|
下载:
