[1] |
Chen Fu, Tang Wen-Xin, Yu Guo-Hao, Zhang Li, Xu Kun, Zhang Bao-Shun. Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica,
2020, 69(9): 098501.
doi: 10.7498/aps.69.20191850
|
[2] |
Zhao Shi-Ping, Zhang Xin, Liu Zhi-Hui, Wang Quan, Wang Hua-Lin, Jiang Wei-Wei, Liu Chao-Qian, Wang Nan, Liu Shi-Min, Cui Yun-Xian, Ma Yan-Ping, Ding Wan-Yu, Ju Dong-Ying. Influence of low-energy ammonia ion/group diffusion on electrical properties of indium tin oxide film. Acta Physica Sinica,
2020, 69(23): 236801.
doi: 10.7498/aps.69.20200860
|
[3] |
Fan Da-Zhi, Liu Gui-Li, Wei Lin. Electron-theoretical study on the influences of torsional deformation on electrical and optical properties of O atom absorbed graphene. Acta Physica Sinica,
2017, 66(24): 246301.
doi: 10.7498/aps.66.246301
|
[4] |
Zhu Yan-Xu, Cao Wei-Wei, Xu Chen, Deng Ye, Zou De-Shu. Effect of different ohmic contact pattern on GaN HEMT electrical properties. Acta Physica Sinica,
2014, 63(11): 117302.
doi: 10.7498/aps.63.117302
|
[5] |
Du Yun, Lu Nian-Peng, Yang Hu, Ye Man-Ping, Li Chao-Rong. Electrical, optical properties and structure characterization of In-doped copper nitride thin film. Acta Physica Sinica,
2013, 62(11): 118104.
doi: 10.7498/aps.62.118104
|
[6] |
Liu Jian-Peng, Zhu Yan-Xu, Guo Wei-Ling, Yan Wei-Wei, Wu Guo-Qing. The effect of ITO annealing on electrical characteristic of GaN based LED. Acta Physica Sinica,
2012, 61(13): 137303.
doi: 10.7498/aps.61.137303
|
[7] |
Zhang Zeng-Yuan, Gao Xiao-Yong, Feng Hong-Liang, Ma Jiao-Min, Lu Jing-Xiao. Effect of the reactive pressure on the structure and optical properties of silver oxide films deposited by direct-current reactive magnetron sputtering. Acta Physica Sinica,
2011, 60(1): 016110.
doi: 10.7498/aps.60.016110
|
[8] |
Wu Bao-Jia, Han Yong-Hao, Peng Gang, Liu Cai-Long, Wang Yue, Gao Chun-Xiao. Research of in-situ electrical property of micron dimension ZnO under high pressure. Acta Physica Sinica,
2010, 59(6): 4235-4239.
doi: 10.7498/aps.59.4235
|
[9] |
Chen Gen-Yu, Wu Han-Hua, Li Yue, Chang Hong, Tang Yuan-Guang. Effect of electrical parameters on characteristics of microarc oxidation coatings of commercially pure titanium in colloid. Acta Physica Sinica,
2010, 59(3): 1958-1963.
doi: 10.7498/aps.59.1958
|
[10] |
Fu Xiu-Li, Tang Wei-Hua, Peng Zhi-Jian. Influence of doping level on electrical properties of ZnO-based composite varistor. Acta Physica Sinica,
2008, 57(9): 5844-5852.
doi: 10.7498/aps.57.5844
|
[11] |
Cao Qi, Li Xiang-Yin. Temperature influence on optical and electric properties of nano ZnO film. Acta Physica Sinica,
2004, 53(5): 1572-1576.
doi: 10.7498/aps.53.1572
|
[12] |
CHENG SHAN-HUA, NING ZHAO-YUAN, KAN JIAN, MA CHUN-LAN, YE CHAO. EFFECTS OF DEPOSITION TEMPERATURE ON ELECTRICAL PROPERTIES OF HYDROGENATED AMORP HOUS CARBON FILMS. Acta Physica Sinica,
2000, 49(10): 2041-2046.
doi: 10.7498/aps.49.2041
|
[13] |
WANG WEI-NING, FANG YAN, FU SHI-YOU, ZHANG PENG-XIANG. INFLUENCE OF ADDING KCl ON LIGHT ABSORPTION SPECTRA OF SILVER COLLOID. Acta Physica Sinica,
1990, 39(2): 177-182.
doi: 10.7498/aps.39.177
|
[14] |
LI JIAN-PING, LIU WEI-MIN, WU QUAN-DE. INFLUENCE OF Ag CONTENT ON OPTICAL PROPERTIES OF Ag-Cs2O THIN FILMS. Acta Physica Sinica,
1987, 36(2): 264-269.
doi: 10.7498/aps.36.264
|
[15] |
CHOW JYE, WANG ZHEN-GUO, LOU ZHE-GONG, WANG WAN-LIAN, YUO SHIN-KAI. LOW TEMPERATURE ELECTRICAL PROPERTIES OF SILICON MATERIAL. Acta Physica Sinica,
1966, 22(4): 404-411.
doi: 10.7498/aps.22.404
|
[16] |
WANG GOO-WEN, BAO YAN-PENG, CAO JIN-RUI, ZHANG GUANG-YONG. THE EFFECTS OF PLANE STRESS ON FOUR EXCITON LINE SERIES IN CUPROUS OXIDE CRYSTAL. Acta Physica Sinica,
1966, 22(7): 743-748.
doi: 10.7498/aps.22.743
|
[17] |
. . Acta Physica Sinica,
1964, 20(11): 1178-1179.
doi: 10.7498/aps.20.1178
|
[18] |
. . Acta Physica Sinica,
1964, 20(11): 1176-1177.
doi: 10.7498/aps.20.1176
|
[19] |
. 高压对InSb、InAs电学性质的影响. Acta Physica Sinica,
1961, 17(4): 198-204.
doi: 10.7498/aps.17.198
|
[20] |
. ДИФФУЗИЯ ЧУЖЕРОДНЫХ ПРИМЕСЕЙ В Cu2O. Acta Physica Sinica,
1958, 14(6): 442-448.
doi: 10.7498/aps.14.442
|