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摩擦纳米发电机(triboelectric nanogenerator, TENG)作为微纳电源或自取能传感器近年来在多领域表现出广阔的应用潜力. TENG的输出性能提升与作为摩擦起电层的电介质材料接触起电特性密切相关. 本文首先介绍了TENG及其电介质摩擦起电层的相关基础理论和模型; 其次, 阐述了TENG电介质材料的选材、改性(表面改性、体改性)和结构设计策略, 其中表面改性和体改性涉及表面粗糙度控制、官能团调控、电介质材料介电参数优化, 在电介质的结构设计方面, 重点介绍了电荷传输层、捕获层、阻挡层的原理及通过多层结构来提高TENG介电性能的典型方法; 最后, 强调了本领域发展面临的挑战和未来发展趋势, 为面向高性能TENG的纳米电介质材料开发提供参考.Triboelectric nanogenerator (TENG), as a micro-nano power source or self-powered sensor, has shown great prospects in various industries in recent years. The TENG output performance is closely related to the contact electrification characteristics of the triboelectric dielectric material. Herein, we first introduce the relevant fundamental theory and models of TENG and tribo-dielectrics. Then, we introduce the material selection, modification method (including surface modification and bulk modification) and structural design strategy of TENG dielectric material. Surface and bulk modification mainly involve surface roughness control, surface functional group regulation, and optimization of dielectric parameters. In terms of dielectric structural design, the principle of charge transport, trapping, and blocking layers as well as typical techniques to improve the dielectric properties of TENGs through multi-layer structures are highlighted. Finally, challenges and directions for future research are discussed, which is conducive to the fabricating of high-performance TENG dielectric materials.
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Keywords:
- triboelectric nanogenerator /
- dielectric material /
- micro-nano composite materials /
- charge control
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图 3 表面粗糙度控制策略 (a) 表面改性机制[41]; (b) 表面图案化[13]; (c) 砂纸模版法[44]; (d) 静电纺丝ZnO/PAN纤维膜[46]; (e) 静电纺丝SMPU纤维膜[47]
Fig. 3. Surface roughness control strategy: (a) Surface modification mechanism[41]; (b) surface patterning[13]; (c) sandpaper template method[44]; (d) electrospun ZnO/PAN fiber membrane[46]; (e) electrospun SMPU fiber membrane[47].
图 4 表面官能团修饰策略 (a) 原子层面修饰[14]; (b) 纤维素分子修饰[51]; (c) 离子改性[52]; (d) 等离子体处理[54]; (e) 中性束处理[55]
Fig. 4. Surface functional group modification strategy: (a) Atomic level modification[14]; (b) cellulose molecule modification[51]; (c) ion modification[52]; (d) plasma treatment[54]; (e) neutral beam treatment[55].
图 5 提高相对介电常数的策略 (a) 极性相诱导示意图[57]; (b) Bi2WO6:PVDF-TrFE纳米纤维膜[15]; (c) 微电容器模型示意图[67]; (d) Co-NPC/PVDF介质形成的微电容器[69]; (e) MOF纳米片/丝素蛋白复合膜[70]; (f) Cs3Bi2Br9/PVDF-HFP纳米纤维膜[72]
Fig. 5. Strategies for improving relative permittivity: (a) Schematic diagram of polar phase induction[57]; (b) Bi2WO6:PVDF-TrFE nanofiber membrane[15]; (c) schematic diagram of the microcapacitor model[67]; (d) microcapacitor formed by Co-NPC/PVDF dielectric[69]; (e) MOF nanoflakes/silk fibroin composite membrane[70]; (f) Cs3Bi2Br9/PVDF-HFP nanofiber membrane[72].
图 6 抑制相对介电损耗、提高介电强度的策略 (a) Ag@C纳米颗粒掺入PDMS基质[16]; (b) Al@Al2O3纳米颗粒掺入PVDF基质[74]; (c) Ba(Zr0.21Ti0.79)O3和BNNS共同掺入PVDF基质[76]; (d) TiO2纳米棒阵列掺入PVDF基质[75]
Fig. 6. Strategies to suppress relative dielectric loss and improve dielectric strength (a) Ag@C nanoparticles incorporated into PDMS matrix[16]; (b) Al@Al2O3 nanoparticles incorporated into PVDF matrix[74]; (c) Ba(Zr0.21Ti0.79)O3 and BNNS incorporated into PVDF matrix[76]; (d) TiO2 nanorod array incorporated into PVDF matrix[75].
图 7 电荷传输层、储存层、阻挡层 (a) rGO-AgNPs充当电荷捕获层[86]; (b) 摩擦电介质体积电导率对电荷捕获的影响[87]; (c) PVA-PVA/CNT-PS充当电荷收集层、传输层和储存层[17]; (d) TiOx充当电荷阻挡层[84]
Fig. 7. Charge transport-storage-blocking layer: (a) rGO-AgNPs functioning as charge trapping layer[86]; (b) effect of tribo-layer volume conductivity on charge trapping[87]; (c) PVA-PVA/CNT-PS functioning as charge transport, transfer, and storage layer[17]; (d) TiOx functioning as charge blocking layer[84].
图 8 多层电介质结构设计 (a) Maxwell-Sillar-Wagner模型[90]; (b) 铁电多层纳米复合电介质[91]; (c) PVDF/BNNS-PVDF/BST-PVDF/BNNS三层结构电介质[92]; (d) 梯度浓度的PVDF/BaTiO3三层结构电介质[94]
Fig. 8. Multilayered dielectric structure design: (a) Maxwell-Sillar-Wagner model[90]; (b) ferroelectric multilayer nanocomposite dielectric[91]; (c) PVDF/BNNS-PVDF/BST-PVDF/BNNS three-layer structure dielectric[92]; (d) PVDF/BaTiO3 three-layer structure dielectric with gradient concentration[94].
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