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量子自旋液体是一种由于自旋阻挫直到零温都不能形成磁有序的新奇量子态, 并且和高温超导密切相关, 因此, 能否通过压力或化学掺杂等方式在量子自旋液体材料中调控出超导态甚至高温超导是一个重要的物理问题. 二维三角晶格稀土硫属化合物NaYbCh2 (Ch = O, S, Se)在比热、核磁共振、中子散射等实验中未出现长程磁有序, 被认为可能具有量子自旋液体基态. 本文研究了NaYbCh2 (Ch = Se, S, O)在压力下的电输运行为. 对于NaYbSe2, 当压力加到26.9 GPa时出现超导转变, 表现出零电阻行为, 其超导转变温度(Tc)约为5.6 K, 并且直到45 GPa都保持基本不变, 得出了其超导转变温度对压力的相图; 对于NaYbS2, 压力使其室温电阻从10 GPa下1011 Ω量级降低到67 GPa的10 Ω量级, 然而其电阻随温度行为没有出现金属性, 也没有发生超导转变; 而对于NaYbO2, 其从常压到60 GPa高压一直保持完全绝缘态, 没有可观测的电阻.Quantum spin liquid is an exotic state without magnetic order down to zero-temperature due to spin frustration, which is closely related to high temperature superconductivity. Therefore, an important issue arises whether the quantum spin liquid can be adjusted into a superconductor, even high-Tc superconductor, by using pressure or chemical doping. Rear-earth chalcogenides NaYbCh2 (Ch = O, S, Se), consisting of planar triangular lattice, exhibit no long-range magnetic order down to the lowest measured temperatures in specific heat, nuclear magnetic resonance, and neutron scattering, and are considered as a quantum spin liquid candidate. Here we investigate the electrical transport properties of NaYbCh2 (Ch = O, S, Se) under high pressures. For NaYbSe2, zero-resistance behavior is observed at 26.9 GPa, showing that the superconductivity comes into being. The superconducting transition temperature (Tc) is around 5.6 K at 26.9 GPa and robust against pressure till 45 GPa. The phase diagram of Tc versus pressure for NaYbSe2 is constructed. For NaYbS2, the room temperature resistance decreases from the order of 1011 Ω at 10 GPa to 10 Ω at 67 GPa. However, neither superconductivity nor insulator-metal transition is observed. Additionally, the NaYbO2 keeps insulating and the resistance is too large to be detected in a pressure range of 0–60 GPa.
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Keywords:
- quantum spin liquid /
- high pressure /
- electrical transport
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图 1 (a) NaYbSe2/NaYbS2的晶体结构图; (b) NaYbSe2单晶的XRD谱; (c) NaYbSe2粉末的XRD谱
Fig. 1. (a) Crystal structure of NaYbSe2/NaYbS2; (b) XRD patten of NaYbSe2 single crystal; (c) XRD patten of NaYbSe2 powder.
图 2 (a) 不同压力下NaYbSe2电阻随温度的依赖关系, 其中17.9 GPa的R(T)曲线的值为
$R\times {1}/{4}$ ; (b) 26.9—45.4 GPa压力范围内, NaYbSe2在低温下的超导转变及其Tconset和TczeroFig. 2. (a) Temperature dependence of the resistance for NaYbSe2 under various pressures. The resistance values at 17.9 GPa are
$R\times {1}/{4}$ . (b) Superconducting transition of NaYbSe2 at low temperature between 26.9 and 45.4 GPa. The arrows indicate the Tconset and Tczero.
图 3 (a) 外加压力为26.9 GPa时NaYbSe2在不同磁场下的低温电阻随温度的依赖关系; (b) NaYbSe2上临界磁场随温度的依赖关系
Fig. 3. (a) With the pressure of 26.9 GPa, the temperature dependence of the resistance for NaYbSe2 at low temperature under different magnetic fields; (b) temperature dependence of the upper critical field for NaYbSe2
图 4 NaYbSe2的压力-温度相图, 图中红色方点代表不同压力下NaYbSe2的Tc, 蓝色圆点代表不同压力下Se的Tc
Fig. 4. Pressure-temperature phase diagram of NaYbSe2. The red square dots denote Tc of NaYbSe2 under different pressures. The blue circle dots denote Tc of Se under different pressures.
图 5 (a) 不同压力下NaYbS2样品电阻随温度的依赖关系; (b) 300 K时NaYbS2样品的电阻随压力的依赖关系
Fig. 5. (a) Temperature dependence of the resistance for NaYbS2 under various pressure; (b) pressure dependence of the resistance for NaYbS2 at 300 K
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[1] Anderson P W 1973 Mater. Res. Bull. 8 153
Google Scholar
[2] Anderson P W 1987 Science 235 1196
Google Scholar
[3] Anderson P W, Baskaran G, Zou Z, Hsu T 1987 Phys. Rev. Lett. 58 2790
Google Scholar
[4] Savary L, Balents L 2017 Rep. Prog. Phys. 80 016502
Google Scholar
[5] Zhou Y, Kanoda K, Ng T K 2017 Rev. Mod. Phys. 89 025003
Google Scholar
[6] Balents L 2010 Nature 464 199
Google Scholar
[7] Li Y, Liao H Zhang Z, Li S, Jin F, Liang L, Zhang L, Zou Y, Pi L, Yang Z, Wang J, Wu Z, Zhang Q 2015 Sci. Rep. 5 16419
Google Scholar
[8] Shimizu Y, Miyagawa K, Kanoda K, Maesato M, Saito G 2003 Phys. Rev. Lett. 91 107001
Google Scholar
[9] Norman M R 2016 Rev. Mod. Phys. 88 041002
Google Scholar
[10] Banerjee A, Briges C A, Yan J Q, et al. 2016 Nat. Mater. 15 733
Google Scholar
[11] Zhong R, Gao T, Ong N P, Cava R J 2020 Sci. Adv. 6 eaay6953
Google Scholar
[12] 郭静, 孙力玲 2015 64 217406
Google Scholar
Guo J, Sun L L 2015 Acta Phys. Sin. 64 217406
Google Scholar
[13] Qi Y, Sachdev S 2008 Phys. Rev. B 77 165112
Google Scholar
[14] Powell B J, McKenzie R H 2011 Rep. Prog. Phys. 74 056501
Google Scholar
[15] Kurosaki Y, Shimizu Y, Miyagawa K, Kanoda K, Saito G 2005 Phys. Rev. Lett. 95 177001
Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
[25] Dai P L, Zhang G, Xie Y, Duan C, Gao Y, Zhu Z, Feng E, Tao Z, Huang C L, Cao H, Podlesnyak A, Granroth G E, Everett M S, Neuefeind J C, Voneshen D, Wang S, Tan G, Morosan E, Wang X, Lin H Q, Shu L, Chen G, Guo Y, Lu X, Dai P 2021 Phys. Rev. X 11 021044
Google Scholar
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Google Scholar
[27] Bordelon M, Liu C, Posthuma L, Sarte P M, Butch N P, Pajerowski D M, Banerjee A, Balents L, Wilson S D 2020 Phys. Rev. B 101 224427
Google Scholar
[28] Bordelon M M, Kenney E, Liu C, Hogan T, Posthuma L, Kavand M, Lyu Y, Sherwin M, Butch N P, Brown C, Graf M J, Balents L, Wilson S D 2019 Nat. Phys. 15 1058
Google Scholar
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Google Scholar
[30] Zhang Z, Yin Y, Ma X, Liu W, Li J, Jin F, Ji J, Wang Y, Wang X, Yu X, Zhang Q 2020 arXiv: 2003.11479v1
[31] Schleid T, Lissner F 1993 Eur. J. Sol. State Inorg. Chem. 30 829
[32] Gray A K, Martin B R, Dorhout P K 2003 Z. Kristallor.-New Cryst. Struct. 218 19
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Google Scholar
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