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小尺寸单轴应变Si p型金属氧化物半导体（PMOS）沟道反型层迁移率与晶面/晶向密切相关，应变PMOS优化设计时应合理选择沟道的晶面/晶向.目前，文献已有1.5 GPa应力强度下单轴应变Si PMOS沟道反型层迁移率按晶面/晶向排序的理论模型.然而，在器件实际制造过程中，覆盖SiN应力膜工艺是固定的，由于沟道弹性劲度系数具有各向异性，这样，不同晶面/晶向应变PMOS沟道所受应力强度不同，进而导致在实际工艺下沟道反型层迁移率晶面/晶向排序理论模型“失效”.针对该问题，本文采用中国科学院微电子研究所40 nm工艺流程制备了不同晶面/晶向40 nm沟道小尺寸单轴应变Si PMOS与未应变Si PMOS，并通过器件转移特性测试，获得了小尺寸单轴应变Si PMOS反型层迁移率晶面/晶向排序结论.此有关小尺寸单轴应变Si PMOS沟道反型层迁移率晶面/晶向排序的相关结论，由于考虑了工艺实现因素，与文献理论预测排序结果相比，更适于指导实际器件制造；相关分析方法也可为其他应变材料沟道MOS相关问题的解决提供重要技术参考.The inversion layer mobility of small-sized uniaxial strained Si p-channel metal oxide semiconductor (PMOS) channel is closely related to the crystal plane and crystal orientation. When optimally designing the strained PMOS, the crystal plane and crystal orientation of the channel should be chosen reasonably. At present, there is a theoretical sort model for the inversion layer mobility of Si PMOS channel at 1.5 GPa stress according to the crystal plane and crystal orientation. However, in the actual manufacturing process of device, the process of covering the SiN stress film is fixed, because the channel coefficient of stiffness is aeolotropic. So, the stress intensities of strained PMOS in different crystal planes and orientation channels are different, which causes the theoretical sort model for the inversion layer mobility to be invalid. To solve this problem, the small-sized uniaxial strained Si PMOS and unstrained Si PMOS with different crystal planes and orientations are fabricated by 40 nm technological process of Chinese Academy of Sciences. The result for the inversion layer mobility of Si PMOS channel according to the crystal plane and crystal orientation is obtained by the device transfer characteristic test. Considering the process implementation factors, the relevant conclusion about the inversion layer mobility of small-sized uniaxial strained Si PMOS channel according to the crystal plane and crystal orientation is more suitable to guide the actual device manufacturing than the theoretical sort result predicted in the literature. At the same time, the relevant analysis method can also provide important technical reference for the solution of other strained material MOS.
[1] Guan H, Guo H 2017 Chin. Phys. B 26 058501
[2] Theerani J T 2017 IEEE Trans. Electron Dev. 64 3316
[3] Bai M, Xuan R X, Song J J, Zhang H M, Hu H Y, Shu B 2015 Comput. Theor. Nanos 12 1610
[4] Hao M R, Hu H Y, Liao C G, Wang B, Zhao X H, Kang H Y, Su H, Zhang H M 2017 Acta Phys. Sin. 66 076101 (in Chinese) [郝敏如, 胡辉勇, 廖晨光, 王斌, 赵小红, 康海燕, 苏汉, 张鹤鸣 2017 66 076101]
[5] Song J J, Yang C, Zhu H, Zhang H M, Xuan R X, Hu H Y, Shu B 2014 Acta Phys. Sin. 63 118501 (in Chinese) [宋建军, 杨超, 朱贺, 张鹤鸣, 宣荣喜, 胡辉勇, 舒斌 2014 63 118501]
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[8] Li L, Liu H X, Yang Z N 2012 Acta Phys. Sin. 61 166101 (in Chinese) [李立, 刘红侠, 杨兆年 2012 61 166101]
[9] Kasim J, Reichel C, Dilliway G, Bai B, Zakowsky N 2015 Solid-State Electronics 110 19
[10] Huang H L, Chen J K, Houng M P 2013 Solid-State Electron. 79 31
[11] Wang X Y 2012 Ph. D. Dissertation (Xi'an:Xidian University) (in Chinese) [王晓艳 2012 博士学位论文(西安:西安电子科技大学)]
[12] Dai X Y, Yang C, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 137104 (in Chinese) [戴显英, 杨程, 宋建军, 张鹤鸣, 郝跃, 郑若川 2012 61 137104]
[13] Wang G Y, Song J J, Zhang H M, Hu H Y, Ma J L, Wang X Y 2012 Acta Phys. Sin. 61 097103 (in Chinese) [王冠宇, 宋建军, 张鹤鸣, 胡辉勇, 马建立, 王晓艳 2012 61 097103]
[14] Zhang W H, Li Z C, Guan Y H, Zhang Y F 2017 Chin. Phys. B 26 078502
[15] Krishnamohan T, Kim D, Dinh T V, Pham A, Meinerzhagen B, Jungemann C, Saraswat K 2008 Electron Devices Meeting San Francisco, CA, USA, December 15-17, 2008 p1
[16] Cai W L, Takenaka M, Takagi S 2014 J. Appl. Phys. 115 094509
[17] Yang M Y, Song J J, Zhang J, Tang Z H, Zhang H M, Hu H Y 2015 Acta Phys. Sin. 64 238502 (in Chinese) [杨旻昱, 宋建军, 张静, 唐召唤, 张鹤鸣, 胡辉勇 2015 64 238502]
[18] Song J J 2008 Ph. D. Dissertation (Xi'an:Xidian University) (in Chinese) [宋建军 2008 博士学位论文(西安:西安电子科技大学)]
[19] Song J J, Bao W T, Zhang J, Tang Z H, Tan K Z, Cui W, Hu H Y, Zhang H M 2016 Acta Phys. Sin. 65 018501 (in Chinese) [宋建军, 包文涛, 张静, 唐昭焕, 谭开洲, 崔伟, 胡辉勇, 张鹤鸣 2016 65 018501]
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[1] Guan H, Guo H 2017 Chin. Phys. B 26 058501
[2] Theerani J T 2017 IEEE Trans. Electron Dev. 64 3316
[3] Bai M, Xuan R X, Song J J, Zhang H M, Hu H Y, Shu B 2015 Comput. Theor. Nanos 12 1610
[4] Hao M R, Hu H Y, Liao C G, Wang B, Zhao X H, Kang H Y, Su H, Zhang H M 2017 Acta Phys. Sin. 66 076101 (in Chinese) [郝敏如, 胡辉勇, 廖晨光, 王斌, 赵小红, 康海燕, 苏汉, 张鹤鸣 2017 66 076101]
[5] Song J J, Yang C, Zhu H, Zhang H M, Xuan R X, Hu H Y, Shu B 2014 Acta Phys. Sin. 63 118501 (in Chinese) [宋建军, 杨超, 朱贺, 张鹤鸣, 宣荣喜, 胡辉勇, 舒斌 2014 63 118501]
[6] Liu W F, Song J J 2014 Acta Phys. Sin. 63 238501 (in Chinese) [刘伟峰, 宋建军 2014 63 238501]
[7] Lee C H, Southwick R G, Bao R, Mochizuki S, Paruchuri V, Jagannathan H 2017 Symposia on VLSI Technology Kyoto, Japan, June 5-8, 2017 p126
[8] Li L, Liu H X, Yang Z N 2012 Acta Phys. Sin. 61 166101 (in Chinese) [李立, 刘红侠, 杨兆年 2012 61 166101]
[9] Kasim J, Reichel C, Dilliway G, Bai B, Zakowsky N 2015 Solid-State Electronics 110 19
[10] Huang H L, Chen J K, Houng M P 2013 Solid-State Electron. 79 31
[11] Wang X Y 2012 Ph. D. Dissertation (Xi'an:Xidian University) (in Chinese) [王晓艳 2012 博士学位论文(西安:西安电子科技大学)]
[12] Dai X Y, Yang C, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 137104 (in Chinese) [戴显英, 杨程, 宋建军, 张鹤鸣, 郝跃, 郑若川 2012 61 137104]
[13] Wang G Y, Song J J, Zhang H M, Hu H Y, Ma J L, Wang X Y 2012 Acta Phys. Sin. 61 097103 (in Chinese) [王冠宇, 宋建军, 张鹤鸣, 胡辉勇, 马建立, 王晓艳 2012 61 097103]
[14] Zhang W H, Li Z C, Guan Y H, Zhang Y F 2017 Chin. Phys. B 26 078502
[15] Krishnamohan T, Kim D, Dinh T V, Pham A, Meinerzhagen B, Jungemann C, Saraswat K 2008 Electron Devices Meeting San Francisco, CA, USA, December 15-17, 2008 p1
[16] Cai W L, Takenaka M, Takagi S 2014 J. Appl. Phys. 115 094509
[17] Yang M Y, Song J J, Zhang J, Tang Z H, Zhang H M, Hu H Y 2015 Acta Phys. Sin. 64 238502 (in Chinese) [杨旻昱, 宋建军, 张静, 唐召唤, 张鹤鸣, 胡辉勇 2015 64 238502]
[18] Song J J 2008 Ph. D. Dissertation (Xi'an:Xidian University) (in Chinese) [宋建军 2008 博士学位论文(西安:西安电子科技大学)]
[19] Song J J, Bao W T, Zhang J, Tang Z H, Tan K Z, Cui W, Hu H Y, Zhang H M 2016 Acta Phys. Sin. 65 018501 (in Chinese) [宋建军, 包文涛, 张静, 唐昭焕, 谭开洲, 崔伟, 胡辉勇, 张鹤鸣 2016 65 018501]
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