InGaN/GaN量子阱垒层和阱层厚度对GaN基激光器性能的影响及机理

周梅; 赵德刚

doi:10.7498/aps.65.077802

摘要

采用LASTIP软件研究了InGaN/GaN(In组分为15%)量子阱垒层和阱层厚度对GaN基蓝紫光激光器性能的影响及机理. 模拟计算结果表明, 当阱层太薄或太厚时, GaN基激光器的阈值电流增加、输出功率下降, 最优的阱层厚度为4.0 nm左右; 当阱层厚度太薄时, 载流子很容易泄漏, 而当阱层厚度太厚时, 极化效应导致发光效率降低, 研究还发现, 与垒层厚度为7 nm 相比, 垒层厚度为15 nm时激光器的阈值电流更低、输出功率更高, 因此适当地增加垒层厚度能显著抑制载流子泄漏, 从而改善激光器性能.

关键词:

Abstract

The effects of barrier and well thickness in InGaN/GaN (with in content of 15%) multiple quantum well (MQW) on the performances of GaN based laser diode (LD) are investigated by using LASTIP software, and the relevant physical mechanisms are discussed. It is found that when the barrier-thickness in InGaN/GaN MQW is fixed to be 7 nm, for the well thickness values of 3.0, 3.5, 4.0, 4.5, and 5.0 nm, the threshold currents of LD are 76.31, 67.96, 57.60, 64.62, and 74.59 mA, and the output light powers of LD are 12.05, 15.64, 24.70, 18.21, and 11.35 mW under an injection current of 100 mA, respectively. It indicates that too thick or too thin well may lead to a higher threshold current and a lower output power of GaN based LD. A high performance device can be obtained by using an optimized well thickness of around 4.0 nm. It is found that the LD performance is degraded by using too thin well in the device structure mainly due to the high leakage current, while strong polarization will lead to the decrease of overlap integral and luminescence intensity if the well layer is too thick, and thus a poor performance is obtained. It is found that the LD performance can be improved obviously by appropriately increasing barrier thickness from 7 nm to 15 nm. When the barrier thickness in InGaN/GaN MQW is fixed at 15 nm and the well thickness values are 3.0, 3.5, 4.0, 4.5 and 5.0 nm, the threshold currents of LD are 59.54, 52.42, 52.17, 51.38, and 58.99 mA, and the output light powers of LD are 36.12, 39.69, 40.79, 40.27, and 33.19 mW under an injection current of 100 mA, respectively, i.e., LD device parameters are improved. It suggests that the higher performances of GaN based laser diode can be realized by appropriately increasing the thickness of barrier when the thickness of well is optimized to be around 4 nm.

Keywords:

作者及机构信息

周梅¹,
赵德刚²

1.
中国农业大学理学院应用物理系, 北京 100083;

2.
中国科学院半导体研究所, 集成光电子学国家重点实验室, 北京 100083

通信作者: 赵德刚, dgzhao@red.semi.ac.cn

基金项目: 国家自然科学基金(批准号: 61474142)资助的课题.

Authors and contacts

Zhou Mei¹,
Zhao De-Gang²

1.
Department of Physics, China Agriculture University, Beijing 100083, China;

2.
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Corresponding author: Zhao De-Gang, dgzhao@red.semi.ac.cn

Funds: Projects Project supported by the National Natural Science Foundation of China (Grant No. 61474142).

参考文献

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[7]	Ji L, Jiang D S, Zhang S M, Liu Z S, Zeng C, Zhao D G, Zhu J J, Wang H, Duan L H, Yang H 2010 Chin. Phys. B 19 124211
[8]	Liu J P, Li Z C, Zhang L Q, Zhang F, Tian A Q, Zhou K, Li D Y, Zhang S M, Yang H 2014 Appl. Phys. Express 7 111001
[9]	Chen P, Feng M X, Jiang D S, Zhao D G, Liu Z S, Li L, Wu L L, Le L C, Zhu J J, Wang H, Zhang S M, Yang H 2012 J. Appl. Phys. 112 113105
[10]	Le L C, Zhao D G, Jiang D S, Chen P, Liu Z S, Yang J, He X G, Li X J, Liu J P, Zhu J J, Zhang S M, Yang H 2014 Opt. Express 22 11392
[11]	Li X, Zhao D G, Jiang D S, Chen P, Liu Z S, Zhu J J, Shi M, Zhao D M, Liu W 2016 J. Semicond. 37 014007
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[13]	Kim K C, Schmidt M C, Sato H, Wu F, Fellows N, Jia Z, Saito M, Nakamura S, DenBaars S P, Speck J S, Fujito K 2007 Appl. Phys. Lett. 91 181120
[14]	Bai J, Wang T, Sakai S 2000 J. Appl. Phys. 88 4729
[15]	Takeuchi T, Sota S, Katsuragawa M, Komori M, Takeuchi H, Amano H, Akasaki I 1997 Jpn. J. Appl. Phys. 36 L382
[16]	Takeuchi T, Wetzel C, Yamaguchi S, Sakai H, Amano H, Akasaki I 1998 Appl. Phys. Lett. 73 1691
[17]	Nardelli M B, Rapcewicz K, Bernholc J 1997 Appl. Phys. Lett. 71 3135
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施引文献

[1]	Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y 1996 Jpn. J. Appl. Phys. 35 L74
[2]	Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Sugimoto Y, Kiyoku H 1997 Appl. Phys. Lett. 70 1417
[3]	Nakamura S 1998 Science 281 956
[4]	Hardy M T, Feezell D F, DenBaars S P, Nakamura S 2011 Mater. Today 14 408
[5]	Yang H, Chen L H, Zhang S M 2005 J. Semicond. 26 414
[6]	Zhang L Q, Zhang S M, Jiang D S, Wang H, Zhu J J, Zhao D G, Liu Z S, Yang H 2009 Chin. Phys. B 18 5350
[7]	Ji L, Jiang D S, Zhang S M, Liu Z S, Zeng C, Zhao D G, Zhu J J, Wang H, Duan L H, Yang H 2010 Chin. Phys. B 19 124211
[8]	Liu J P, Li Z C, Zhang L Q, Zhang F, Tian A Q, Zhou K, Li D Y, Zhang S M, Yang H 2014 Appl. Phys. Express 7 111001
[9]	Chen P, Feng M X, Jiang D S, Zhao D G, Liu Z S, Li L, Wu L L, Le L C, Zhu J J, Wang H, Zhang S M, Yang H 2012 J. Appl. Phys. 112 113105
[10]	Le L C, Zhao D G, Jiang D S, Chen P, Liu Z S, Yang J, He X G, Li X J, Liu J P, Zhu J J, Zhang S M, Yang H 2014 Opt. Express 22 11392
[11]	Li X, Zhao D G, Jiang D S, Chen P, Liu Z S, Zhu J J, Shi M, Zhao D M, Liu W 2016 J. Semicond. 37 014007
[12]	Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[13]	Kim K C, Schmidt M C, Sato H, Wu F, Fellows N, Jia Z, Saito M, Nakamura S, DenBaars S P, Speck J S, Fujito K 2007 Appl. Phys. Lett. 91 181120
[14]	Bai J, Wang T, Sakai S 2000 J. Appl. Phys. 88 4729
[15]	Takeuchi T, Sota S, Katsuragawa M, Komori M, Takeuchi H, Amano H, Akasaki I 1997 Jpn. J. Appl. Phys. 36 L382
[16]	Takeuchi T, Wetzel C, Yamaguchi S, Sakai H, Amano H, Akasaki I 1998 Appl. Phys. Lett. 73 1691
[17]	Nardelli M B, Rapcewicz K, Bernholc J 1997 Appl. Phys. Lett. 71 3135
[18]	Hansen M, Piprek J, Pattison P M, Speck J S, Nakamura S, DenBaars S P 2002 Appl. Phys. Lett. 81 4275
[19]	Kuo Y K, Chang Y A 2004 IEEE J. Quantum Electron. 40 437
[20]	Goto O, Tomiya S, Hoshina Y, Tanaka T, Ohta M, Ohizumi Y, Yabuki Y, Funato K, Ikeda M 2007 Proc. SPIE 6485 64850Z

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