Au/SrTiO3/Au界面电阻翻转效应的低频噪声分析

王爱迪; 刘紫玉; 张培健; 孟洋; 李栋; 赵宏武

doi:10.7498/aps.62.197201

摘要

本文研究了Au/SrTiO3/Au三明治结构中的双极电阻翻转效应, 观察到高、低阻态的电阻弛豫现象. 低频噪声测量表明高、低阻态的电阻涨落表现出1/f行为. 对比试验表明, 高阻态的低频噪声来源于反向偏置肖特基势垒和氧空位的迁移, 强度较大, 低阻态的噪声则源于类欧姆接触底电极区域的氧空位迁移导致的载流子涨落, 强度较低. 同时, 界面上氧空位浓度的弛豫导致了高、低阻态的弛豫过程.

关键词:

The resistance relaxation in Au/SrTiO3/Au sandwiches with bipolar resistance switching has been investigated by the low frequency analysis. The power spectral density of the conducting current fluctuation in the high resistance state and the low resistance state shows 1/f behaviors. By contrast experiment, the low frequency noise for the high resistance state is ascribed to the Schottky barrier under reverse bias and the oxygen vacancy diffusion, while the noise in the low resistance state is due to the carriers fluctuation arising from the oxygen vacancy migration. The resistance relaxation can be further understood as the diffusion of oxygen vacancies under an electric field.

Keywords:

作者及机构信息

1.
北京矿冶研究总院, 北京 100160;

2.
北矿新材科技有限公司, 北京 102206;

3.
北京凝聚态物理国家实验室, 中国科学院物理研究所, 北京 100190

基金项目: 国家重点基础研究发展规划项目(批准号:2009CB930803,2013CB921700)和国家自然科学基金(批准号:10834012)资助的课题.

Authors and contacts

1.
Beijing General Research Institute of Mining and Metallurgy, Beijing 100160, China;

2.
BGRIMM Advanced Materials Science &Technology Co., Ltd, Beijing 102206, China;

3.
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2009CB930803, 2013CB921700), and the National Natural Science Foundation of China (Grant No. 10834012).

参考文献

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施引文献

[1]	Waser R, Aono M 2007 Nature materials 6 833
[2]	Yang J J, Pickett M D, Li X, Ohlberg D A A, Stewart D R, Williams R S 2008 Nanotechnology 3 429
[3]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632
[4]	Strachan J P, Pickett M D, Yang J J, Aloni S, Kilcoyne A L D, Ribeiro G M, Williams R S 2010 Adv. Mater. 22 3573
[5]	Miao F, Yang J J, Borghetti J, Ribeiro G M, Williams R S 2011 Nanotechnology 22 254007
[6]	Valov I, Waser R, Jameson J R, Kozicki M N 2011 Nanotechnology 22 254003
[7]	Strachan J P, Strukov D B, Borghetti J, Yang J J, Ribeiro G M, Williams R S 2011 Nanotechnology 22 254015
[8]	Szot K, Rogala M, Speier W, Klusek Z, Besmehn A, Waser R 2011 Nanotechnology 22 254001
[9]	Kim K M, Jeong D S, Huang C S 2011 Nanotechnology 22 254002
[10]	Pennetta C, Trefan T, Reggiani L 2000 Phys. Rev. Lett. 85 5238
[11]	Li S L, Liao Z L, Li J, Gang J L, Zheng D N 2009 Journal of Physics D: Applied Physics 42 045411
[12]	Sasaki M, 2012 J. Appl. Phys. 112 014501
[13]	Nian Y B, Strozier J, Wu N J, Chen X, Ignatiev A 2007 Phys. Rev. Lett. 98 146403
[14]	Schulman A, Rozenberg M J, Acha C 2012 Phys. Rev. B 86 104426
[15]	Ielmini D, Nardi F, Cagli C 2010 Appl. Phys. Lett. 96 053503
[16]	Lee J K, Lee J W, Park J, Chung S W, Roh J S, Hong S J, Cho I W, Kwon H I, Lee J H 2011 Appl. Phys. Lett. 98 143502
[17]	Lee S B, Park S, Lee J S, Chae S C, Chang S H, Jung M H, Jo Y, Kahng B, Kang B S, Lee M J, Noh T W 2009 Appl. Phys. Lett. 95 122112
[18]	Maccaronio V, Crupi F, Procel L M, Goux L, Simoen E, Trojman L, Miranda E 2013 Microelectronic Engineering 107 1
[19]	Zhang P J, Meng Y, Liu Z Y, Li D, Su T, Meng Q Y, Mao Q, Pan X Y, Chen D M, Zhao H W 2012 J. Appl. Phys. 111 063702
[20]	Shang D S, Sun J R, Shi L, Shen B G 2008 Appl. Phys. Lett. 93 102106
[21]	Weissman M B 1988 Reviews of Moden Physics 60 537
[22]	Lee M S, Lee J K, Hwang H S, Shin H C, Park B G, Park Y J, Lee J H 2011 Japanese Journal of Applied Physics 50 011501
[23]	Park C H, Lee J H 2012 Solid-State Electronics 69 85
[24]	Janousch M, Meijer G I, Staub U, Delley B, Karg S F, Andreasson B P 2007 Adv. Mater. 19 2232

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