电子束辐照诱导Bi:α-BaB2O4 单晶近红外宽带发光的研究

赵衡煜; 俞平胜; 郭鑫; 苏良碧; 李欣年; 方晓明; 杨秋红; 徐军

doi:10.7498/aps.60.097802

摘要

用提拉法技术生长出了Bi:α-BaB2O4单晶,并进行电子束辐照.测定了电子束辐照前后的吸收谱和荧光发射谱.在808 nm波长激光二极管的激发下,电子束辐照后的Bi:α-BaB2O4单晶中观测到了中心波长在1135 nm附近、半高宽为52 nm左右的近红外宽带发光现象.近红外宽带发光的发光中心是Bi+离子.电子束射线起到了将Bi3+和Bi2+还原至一价态

关键词:

Bi:α-BaB2O4 crystal samples are grown by the traditional Czochralski method and the obtained samples are irradiated by electron beam. Absorption and emission spectra of the samples are measured at room temperature before and after their electron irradiation. Under 808 nm LD excitation, broadband (FWHM at 52 nm) near-infrared emissions centered at about 1135 nm are observed in electron-irradiated Bi:α-BaB2O4 samples. Both the emissions are believed to be due to Bi+ ions. Electron beam helps to reduce Bi3+ and Bi2+ into univalence. The formation processes in the samples with different radiation doses are not the same, which is primarily discussed in this work.

Keywords:

作者及机构信息

(1)上海大学材料科学与工程学院电子信息材料系,上海 200072; (2)上海大学材料科学与工程学院电子信息材料系,上海 200072;中国科学院透明与光功能无机材料重点实验室,上海硅酸盐研究所,上海 201800; (3)上海大学射线应用研究所,上海 201800; (4)中国科学院透明与光功能无机材料重点实验室,上海硅酸盐研究所,上海 201800

基金项目: 国家自然科学基金(批准号:60778036,60938001,61078053和60908030),中国科学院百人计划和上海市科学技术委员会(批准号:08520704400)资助的课题.

Authors and contacts

(1)Applied Radiation Institute, Shanghai University, Shanghai 201800, China; (2)Department of Electronic Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China; (3)Department of Electronic Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China;Key Laboratory of Transparent and Opto-functional Inorganic Materials, Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 201800, China; (4)Key Laboratory of Transparent and Opto-functional Inorganic Materials, Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 201800, China

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施引文献

[1]	Ogoshi H, Ichino S, Kurotori K 2000 J. Furukawa Rev. 20 17
[2]	Yang J H, Dai S X, Wen L, Liu Z P, Hu L L, Jiang Z H 2003 Acta Phys. Sin. 52 514(in Chinese) [杨建虎、戴世勋、温磊、柳祝平、胡丽丽、姜中宏 2003 52 514]
[3]	Chen B Y, Lin Y H, Chen D D, Jiang Z H 2005 Acta Phys. Sin. 54 2374 (in Chinese) [陈炳炎、刘粤惠、陈东丹、姜中宏 2005 54 2374]
[4]	Fujimoto Y, Nakatsuka M 2001 Jpn. J. Appl. Phys. 40 L279
[5]	Peng M Y, Qiu J R, Chen D P, Meng X G, Yang Y, Jiang X W, Zhu C S 2004 Opt. Lett. 29 1998
[6]	Wang X J, Xia H P 2006 Acta Phys. Sin. 55 5263 (in Chinese) [王雪俊、夏海平 2006 55 5263]
[7]	Dianov E M, Dvoyrin V V, Mashinsky V M, Umnikov A A, Gur'yanov A N 2005 Quantum Electon. 35 1083
[8]	Razdobreev I, Bigot L, Pureur V, Bouwmans G, Douay M, Jurdyc A M 2006 Appl. Phys. Lett. 90 031103
[9]	Dvoyrin V V, Mashinsky V M, Dianov E M 2007 Opt. Lett. 32 451
[10]	Kivisto S, Puustinen J, Guina M, Okhotnikov O G, Dianov E M 2008 Electron. Lett. 44 1456
[11]	Rulkov A B, Ferlin A A, Popov S V, Taylor J R, Razdobreev I, Bigot I, Bouwmans G 2007 Opt. Express. 15 5473
[12]	Meng X G, Qiu J R, Peng M Y, Chen D P, Zhao Q S, Jiang X W, Zhu C S 2005 Opt. Express 13 1628
[13]	Zhou S F, Zhu B, Yang H C, Ye S, Lakshminarayana G, Hao J H, Qiu J R 2008 Adv. Funt. Mater. 18 1407
[14]	Sokolov V O, Plotnichenko V G, Dianov E M 2008 Opt. Lett. 33 1488
[15]	Peng M Y, Qiu J R, Chen D P, Meng X G, Zhu C S 2005 Opt. Lett. 30 2433
[16]	Kustov E F, Bulatov L I, Dvoyrin V V, Mashinsky V M 2009 Opt. Lett. 34 1549
[17]	Okhrimchuk A G, Btuvia L N, Dianov E M, Lichkova N V, Zagorodnev V N, Boldyrev K N 2008 Opt. Lett. 33 2182
[18]	Peng M Y, Sprenger B, Schmidt M A, Schwefel H G L, Wondraczek L 2010 Opt. Express 18 12852
[19]	Su L B, Yu J, Zhou P, Li H J, Zheng L H, Yang Y, Wu F, Xia H P, Xu J 2009 Opt. Lett. 34 2504
[20]	Zhou P, Su L B, Li H J, Yu J, Zheng L H, Yang Q H, Xu J 2010 Acta Phys. Sin. 59 2827 (in Chinese) [周朋、苏良碧、李红军、喻军、郑丽和、杨秋红、徐军 2010 59 2827]
[21]	Zhou G Q, Xu J, Chen X D 1998 J. Crystal Growth. 191 517
[22]	Yu J, Zhou P, Zhao H Y, Wu F, Xia H P, Su L B, Xu J 2010 Acta Phys. Sin. 59 3538 (in Chinese) [喻军、周朋、赵衡煜、吴峰、夏海平、苏良碧、徐军 2010 59 3538]
[23]	Blasse G, Meijerink A, Nomes M, Zuidema J 1994 J. Phys. Chem. Solids 55 171
[24]	Srivastava A M 1998 J. Lumin. 78 239
[25]	Novoselov A, Yoshikawa A, Nikl M, Pejchal J, Fukuda T 2006 J. Cryst. Growth 292 236
[26]	Blasse G, Bril A 1968 J. Chem. Phys. 48 217
[27]	Srivastava A M 1998 J. Lumin. 78 239
[28]	Dvoyrin V V, Kir'yanov A V, Mashinsky V M, Medvedkov O I, Umnikov A A, Guryanov A N, Dianov E M 2010 IEEE J. Quantum Elect. 46 182
[29]	Shannon R D 1976 Acta Cryst. A 2 751
[30]	Xu J, Zhao H Y, Su L B, Yu J, Zhou P, Tang H L, Zheng L H, Li H J 2010 Opt. Express. 18 3385
[31]	Zhou N, Qiao D J 2002 Materials Dynamics Under Pulse Beam Radiation (Beijing: China National Defence Industry Press) p495—498 (in Chinese) [周南、乔登江 2002 脉冲束辐照材料动力学 (北京: 国防工业出版社) 第495—498页]

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