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A series of (100-x)(GeTe4)-xGa (x=0, 5, 10 mol%) far infrared transmitting chalcogenide glasses is prepared by the traditional melt-quenching method. In this paper, the differential thermal analysis (DTA), visible/near-infrared absorption spectroscopy, infrared transmission spectra are adopted to analyze composition, structure and performance of the GeTe4 glass system with the addition of Ga. The results show that the Te-Ga bond is formed, which can reduce Te metallic character. When the content of Ga is 10 mol%, the glass is of the best thermal stability. With the addition of Ga, the transmission percentage is improved and infrared cut-off wavelength of the glasses extends beyond 20 μm. Based on the metallization criterion and average bond energy, the relationship between optical band gap and composition is investigated.
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Keywords:
- optical materials /
- chalcogenide glasses /
- optical band gap /
- infrared spectroscopy
[1] Dai S X, Xu T F, Nie Q H, Shen X, Zhang J J, Hu L L 2006 Acta Phys. Sin. 55 1479(in Chinese)[戴世勋、徐铁峰、聂秋华、沈 祥、张军杰、胡丽丽 2006 55 1479]
[2] Yan F, Zhu T J, Zhao X B, Dong S R 2007 J. Univ. Sci. Technol. B 14 64
[3] Ziani N, Belhadji M, Heireche L, Bouchaour Z, Belbachir M 2005 J. Phys. B 358 132
[4] Maurugeon S, Bureau B, Boussard-Pledel C, Faber A J, Zhang X H, Geliesen W, Lucas J 2009 J. Non-Cryst. Solids 355 2074
[5] Chung S, Kim H C, Lee S 2009 Solid State Commun. 149 1739
[6] Anedda A, Carbonaro C M, Serpi A, Chiodini N, Paleari A, Scotti R, Spinolo G, Pruneri V 2001 J. Non-Cryst. Solids 280 287
[7] Danto S, Houizot P, Boussard-Pledel C Zhang X H, Smektala F, Lucas J 2006 Adv. Funct. Mater. 16 1847
[8] Tauc J 1974 Amorphous and Liquid Semiconductor (New York: Plenium Press) p171
[9] Urbach E 1953 Phys. Rev. 92 1324
[10] Zhang G J, Gu D H, Gan F X 2005 Chin. Phys. 14 218
[11] Huang S P, Wu D S, Li X D 2005 Chin. Phys. 14 1631
[12] Duffy J A 1986 J. Solid State Chem. 62 145
[13] Dimitrov V, Komatsu T 1999 J. Ceram. Soc. Jpn. 107 1012
[14] Yang S D, Ning Z Y, Huang F, Chen S H, Ye C 2002 Acta Phys. Sin. 51 1321(in Chinese)[杨慎东、宁兆元、黄 峰、程珊华、叶 超 2002 51 1321]
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[1] Dai S X, Xu T F, Nie Q H, Shen X, Zhang J J, Hu L L 2006 Acta Phys. Sin. 55 1479(in Chinese)[戴世勋、徐铁峰、聂秋华、沈 祥、张军杰、胡丽丽 2006 55 1479]
[2] Yan F, Zhu T J, Zhao X B, Dong S R 2007 J. Univ. Sci. Technol. B 14 64
[3] Ziani N, Belhadji M, Heireche L, Bouchaour Z, Belbachir M 2005 J. Phys. B 358 132
[4] Maurugeon S, Bureau B, Boussard-Pledel C, Faber A J, Zhang X H, Geliesen W, Lucas J 2009 J. Non-Cryst. Solids 355 2074
[5] Chung S, Kim H C, Lee S 2009 Solid State Commun. 149 1739
[6] Anedda A, Carbonaro C M, Serpi A, Chiodini N, Paleari A, Scotti R, Spinolo G, Pruneri V 2001 J. Non-Cryst. Solids 280 287
[7] Danto S, Houizot P, Boussard-Pledel C Zhang X H, Smektala F, Lucas J 2006 Adv. Funct. Mater. 16 1847
[8] Tauc J 1974 Amorphous and Liquid Semiconductor (New York: Plenium Press) p171
[9] Urbach E 1953 Phys. Rev. 92 1324
[10] Zhang G J, Gu D H, Gan F X 2005 Chin. Phys. 14 218
[11] Huang S P, Wu D S, Li X D 2005 Chin. Phys. 14 1631
[12] Duffy J A 1986 J. Solid State Chem. 62 145
[13] Dimitrov V, Komatsu T 1999 J. Ceram. Soc. Jpn. 107 1012
[14] Yang S D, Ning Z Y, Huang F, Chen S H, Ye C 2002 Acta Phys. Sin. 51 1321(in Chinese)[杨慎东、宁兆元、黄 峰、程珊华、叶 超 2002 51 1321]
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