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Molecular dynamics method was employed to investigate the effects of the reaction layer formed near the surface region on CF+3 etching of Si at different temperatures. The simulation results show that the coverages of F and C are sensitive to the surface temperature. With increasing temperature, the physical etching is enhanced, while the chemical etching is weakened. It is found that with increasing surface temperature, the etching rate of Si increases. As to the etching products, the yields of SiF and SiF2 increase with temperature, whereas the yield of SiF3 is not sensitive to the surface temperature. And the increase of the etching yield is mainly due to the increased desorption of SiF and SiF2. The comparison shows that the reactive layer plays an important part in the subsequeat impacting, which enhances the etching rate of Si and weakens the chemical etching intensity.
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Keywords:
- molecular dynamics /
- plasmas /
- etching /
- sample temperature
[1] Chang J P, Cobum J W 2003 J. Vac. Sci. Technol. A 21 S145
[2] Dai Z L, Mao M, Wang Y N 2006 Physics 35 693 (in Chinese) [戴忠玲、毛 明、王友年 2006 物理 35 693]
[3] Chai C C, Yang Y T, Li Y J, Jia H J, Ji H L 1999 Acta Phys. Sin. 48 550 (in Chinese) [柴常春、杨银堂、李跃进、贾护军、姬慧莲 1999 48 550]
[4] Wang Y N 2000 J. Dalian Univ. Technol. 40 12 (in Chinese) [王友年 2000 大连理工大学学报 40 12]
[5] Humbird D, Graves D B 2004 J. Appl. Phys. 96 2466
[6] Gou F, Zen L T, Meng C 2008 Thin Solid Films 516 1832
[7] Gou F, Gleeson M A, Kleyn A W 2007 Surf. Sci. 601 76
[8] Gou F, Gleeson M A, Kleyn A W 2007 Surf. Sci. 601 4250
[9] Gou F, Lu X, Qian Q, Tang J Y 2007 Nucl. Instrum. Meth. B 265 479
[10] Gou F, Gleeson M A, Kleyn A W 2008 Int. Rev. Phys. Chem. 27 229
[11] Abrams C F, Graves D B 1999 J. Appl. Phys. 86 5938
[12] Yin P H, Saxena V, Steckl A J 1997 Phys. Stat. Sol. 202 605
[13] Alder B J, Wainwright T E 1957 Chem. Phys. 27 1208
[14] Helmer B A 1997 J. Vac. Sci. Technol. A 15 2252
[15] Helmer B A 1998 J. Vac. Sci. Technol. A 16 3502
[16] Zhou Z Y, Wang T B, Cheng Z N 1999 Acta Phys. Sin. 48 2228 (in Chinese) [周正有、王铁兵、程兆年 1999 48 2228]
[17] Stillinger F H, Weber T A 1985 Phys. Rev. B 31 5262
[18] Abrams C F, Graves D B 1999 J. Appl. Phys. 66 5938
[19] Verlet L 1967 Phys. Rev. 159 98
[20] Berendsen H J C, Postma J P M, Gunsteren W F V, DiNola A, Haak J R 1984 Chem. Phys. 81 3684
[21] Abrams C F, Graves D B 1999 J. Appl. Phys. 86 5938
[22] Winters H F, Coburn I W 1979 Appl. Phys. Lett. 34 70
[23] Tu Y Y, Chuang T J, Winters H F 1981 Phys. Rev. B 23 823
[24] Mauer J L, Logan J S, Zielinski L B 1978 J. Vac. Sci. Technol. 15 1734
[1] Chang J P, Cobum J W 2003 J. Vac. Sci. Technol. A 21 S145
[2] Dai Z L, Mao M, Wang Y N 2006 Physics 35 693 (in Chinese) [戴忠玲、毛 明、王友年 2006 物理 35 693]
[3] Chai C C, Yang Y T, Li Y J, Jia H J, Ji H L 1999 Acta Phys. Sin. 48 550 (in Chinese) [柴常春、杨银堂、李跃进、贾护军、姬慧莲 1999 48 550]
[4] Wang Y N 2000 J. Dalian Univ. Technol. 40 12 (in Chinese) [王友年 2000 大连理工大学学报 40 12]
[5] Humbird D, Graves D B 2004 J. Appl. Phys. 96 2466
[6] Gou F, Zen L T, Meng C 2008 Thin Solid Films 516 1832
[7] Gou F, Gleeson M A, Kleyn A W 2007 Surf. Sci. 601 76
[8] Gou F, Gleeson M A, Kleyn A W 2007 Surf. Sci. 601 4250
[9] Gou F, Lu X, Qian Q, Tang J Y 2007 Nucl. Instrum. Meth. B 265 479
[10] Gou F, Gleeson M A, Kleyn A W 2008 Int. Rev. Phys. Chem. 27 229
[11] Abrams C F, Graves D B 1999 J. Appl. Phys. 86 5938
[12] Yin P H, Saxena V, Steckl A J 1997 Phys. Stat. Sol. 202 605
[13] Alder B J, Wainwright T E 1957 Chem. Phys. 27 1208
[14] Helmer B A 1997 J. Vac. Sci. Technol. A 15 2252
[15] Helmer B A 1998 J. Vac. Sci. Technol. A 16 3502
[16] Zhou Z Y, Wang T B, Cheng Z N 1999 Acta Phys. Sin. 48 2228 (in Chinese) [周正有、王铁兵、程兆年 1999 48 2228]
[17] Stillinger F H, Weber T A 1985 Phys. Rev. B 31 5262
[18] Abrams C F, Graves D B 1999 J. Appl. Phys. 66 5938
[19] Verlet L 1967 Phys. Rev. 159 98
[20] Berendsen H J C, Postma J P M, Gunsteren W F V, DiNola A, Haak J R 1984 Chem. Phys. 81 3684
[21] Abrams C F, Graves D B 1999 J. Appl. Phys. 86 5938
[22] Winters H F, Coburn I W 1979 Appl. Phys. Lett. 34 70
[23] Tu Y Y, Chuang T J, Winters H F 1981 Phys. Rev. B 23 823
[24] Mauer J L, Logan J S, Zielinski L B 1978 J. Vac. Sci. Technol. 15 1734
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