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含硅高熵材料中的有序-无序相变

路辛夷 张勇

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含硅高熵材料中的有序-无序相变

路辛夷, 张勇

Order-Disorder Phase Transition in Silicon-containing High-Entropy Materials

LU Xinyi, ZHANG Yong
Article Text (iFLYTEK Translation)
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  • 高熵合金(HEAs)作为多主元合金的重要分支,因其优异的力学性能与功能特性受到广泛关注。本文聚焦含硅高熵合金中的有序-无序相变机制,系统综述其热力学与动力学调控规律及其对材料性能的影响。研究表明,硅的引入通过优化原子尺寸匹配与混合焓,实现高熵合金中有序相和无序相的匹配,显著提升合金的机械以及物理化学性能。同时,制备工艺与温度/压力调控可通过影响相形成实现多相结构的协同强化。通过成分设计与工艺优化,含硅高熵材料在航空航天、能源及电子器件等领域展现出广阔应用潜力。未来研究需进一步结合多尺度表征与理论模型,揭示相变动态机制,推动其工程化应用。
    High-entropy alloys (HEAs), as a significant branch of multi-principal element alloys, have garnered extensive attention due to their exceptional mechanical and functional properties. This review focuses on the order-disorder phase transition mechanisms in silicon-based HEAs, systematically addressing the thermodynamic and kinetic regulation principles and their impact on material performance. Studies have demonstrated that the incorporation of silicon optimizes atomic size matching and mixing enthalpy, enabling the coordinated coexistence of ordered and disordered phases in high-entropy alloys, thereby significantly enhancing their mechanical and physicochemical properties.
    The evolution of ordered and disordered phases is critically governed by fabrication processes. Advanced fabrication techniques, such as laser cladding and powder metallurgy, alongside temperature/pressure modulation, enable precise control over phase formation and hierarchical structures, achieving synergistic strengthening through multiphase architectures.Rapid cooling techniques like laser cladding suppress nucleation and growth of brittle intermetallic compounds, favoring single-phase FCC structures. Conversely, controlled annealing treatments can induce phase transitions towards ordered BCC/B2 structures, enhancing high-temperature stability. Advanced techniques such as powder plasma arc additive manufacturing (PPA-AM) leverage rapid solidification to refine grain size and disperse second phases effectively. Thermodynamic drivers, particularly the competition between entropy and enthalpy quantified by the parameter Ω, alongside external stimuli like pressure, provide precise control over phase transformation pathways and final microstructures.
    Furthermore, silicon incorporation enhances functional properties, including elevated electrical resistivity, tailored magnetic responses, and improved high-temperature oxidation resistance through Al2O3/SiO2 layer formation. Despite these advancements, challenges remain in understanding atomic-scale dynamics of phase transitions and scaling up cost-effective manufacturing processes. Future efforts should integrate multiscale characterization, computational modeling, and performance validation under extreme conditions to accelerate the engineering applications of silicon-based HEAs in aerospace, energy storage, and electronic devices.
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